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IRLML6401TRPBF
+BOMMOSFET P-CH 12V 4.3A SOT23
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Nhà sản xuấtCông nghệ Infineon
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Ông. Phần #IRLML6401TRPBF
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Bảng dữ liệu IRLML6401TRPBF DataSheet
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Series | HEXFET® |
| Part Status | Last Time Buy |
| Base Product Number | IRLML6401 |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 12 V |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 4.3A, 4.5V |
| Vgs(th) (Max) @ Id | 950mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 5 V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 830 pF @ 10 V |
| Power Dissipation (Max) | 1.3W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | Micro3™/SOT-23 |
| Package | TO-236-3, SC-59, SOT-23-3 |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
Tổng quan
Description
The IRLML6401TRPBF features a low on-resistance, which enables it to handle high currents with minimal power loss. It operates at a low voltage, making it compatible with a wide range of electronic devices and systems. The compact SOT-23 package allows for space-saving designs, which is particularly beneficial in compact or portable devices.
With a maximum drain-source voltage (V_DS) of 20V and a continuous drain current (I_D) of around 3.7A, the IRLML6401TRPBF is suitable for medium power applications. It also offers fast switching speeds, which enhances its efficiency in high-frequency applications. Overall, this MOSFET is a versatile component in modern electronic designs.
Equivalent
1. BS250P - A P-channel MOSFET with similar voltage and current ratings.
2. SI2323DS - Offers comparable performance in a similar package.
3. FDS6679 - Another P-channel MOSFET with similar specifications.
When selecting an equivalent, ensure to verify the voltage, current ratings, package type, and any specific application requirements.
Features
1. Voltage and Current Ratings: It has a maximum drain-source voltage (V_ds) of 20V and can handle a continuous drain current (I_d) of 3.7A at a 25°C ambient temperature.
2. Low On-Resistance: The MOSFET features a low on-resistance (R_ds(on)) of approximately 0.045 ohms, enhancing efficiency by minimizing power loss.
3. Package Type: It is housed in a compact SOT-23 package, making it suitable for space-constrained applications.
4. Fast Switching: The device supports fast switching speeds, which is beneficial for high-frequency applications.
5. Applications: It is commonly used in power management, load switching, and DC-DC conversion.
6. Temperature Range: Operates within a wide temperature range from -55°C to 150°C, ensuring reliability in various environments.
These features make the IRLML6401TRPBF suitable for consumer electronics, automotive applications, and other areas requiring efficient power switching.
Pinout
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, the MOSFET is turned on or off.
2. Source (S): This pin is the source of charge carriers, typically connected to the ground or a lower potential in P-channel MOSFET applications.
3. Drain (D): This pin is the output where the load is connected. Current flows from source to drain when the MOSFET is in the on-state.
The IRLML6401TRPBF is designed to handle relatively low to moderate power levels and is often used in applications such as DC-DC converters, battery management, and load switching.
Manufacturer
Application
Package
Frequently Asked Questions
Q: What is the maximum drain current for this P-Channel MOSFET at 25°C?
A: The continuous drain current (Id) is rated at 4.3A (Ta) at 25°C ambient temperature.
Q: What is the typical gate threshold voltage (Vgs(th)) for the IRLML6401TRPBF?
A: The maximum Vgs(th) is 950mV at 250μA, making it suitable for low-voltage logic level drive.
Q: Can this MOSFET be driven directly by a 1.8V logic signal?
A: Yes, the drive voltage range includes 1.8V for achieving Rds(on) minimum, ideal for low-voltage applications.
Q: What is the maximum power dissipation of this device in SOT-23 package?
A: The max power dissipation is 1.3W (Ta), suitable for low-power portable electronic designs.
Q: What is the maximum drain-to-source voltage (Vdss) rating?
A: The Vdss rating is 12V, making it appropriate for 3.7V Li-ion or 5V logic power management.
Q: What is the typical input capacitance (Ciss) value for switching applications?
A: The maximum Ciss is 830pF at Vds=10V, enabling efficient high-frequency switching.