ISL9V3040D3ST-F085C

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ISL9V3040D3ST-F085C

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ECOSPARK1 IGN-IGBT TO252

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Thông số kỹ thuật

thuộc tính Giá trị
Package Tape & Reel (TR),Cut Tape (CT)
Series EcoSPARK®
ProductStatus Active
Voltage-CollectorEmitterBreakdown(Max) 430 V
Current-Collector(Ic)(Max) 21 A
Vce(on)(Max)@VgeIc 1.6V @ 4V, 6A
Power-Max 150 W
InputType Logic
GateCharge 17 nC
Td(on/off)@25°C -/4µs
TestCondition 300V, 1000Ohm, 5V
ReverseRecoveryTime(trr) 7 µs
OperatingTemperature -40°C ~ 175°C (TJ)
MountingType Surface Mount
Package/Case TO-252-3, DPak (2 Leads + Tab), SC-63

Tổng quan

Description

The ISL9V3040D3ST-F085C is a high-voltage, high-speed insulated-gate bipolar transistor (IGBT) designed for use in power electronics applications. It combines the features of a power MOSFET and a bipolar transistor, offering efficient switching and high-current capability. The device is known for its fast switching speeds, which improve the overall efficiency of power conversion systems.
This IGBT is typically used in applications such as motor drives, uninterruptible power supplies (UPS), and power inverters. It operates efficiently at high voltages and currents, making it suitable for demanding environments. The F085C part of the name often refers to its package type and temperature rating, indicating robustness and reliability under different operating conditions.
Key features include a low on-state voltage drop, reduced conduction losses, and high-speed switching. It is encased in a TO-247 package, which facilitates heat dissipation and easy mounting on circuit boards. Overall, the ISL9V3040D3ST-F085C is a reliable component for high-power and high-performance applications.

Equivalent

The ISL9V3040D3ST-F085C is an IGBT (Insulated Gate Bipolar Transistor) commonly used in automotive applications. Equivalent products could include IGBTs with similar voltage, current ratings, and packaging, such as the Infineon IKD04N60RF or the STMicroelectronics STGP10NC60KD However, for precise compatibility, check the datasheets for exact specifications, including voltage, current, and switching characteristics. Always consult the manufacturer's cross-reference tools or speak with a distributor for the most accurate equivalency.

Features

The ISL9V3040D3ST-F085C is a high-current, high-voltage Insulated Gate Bipolar Transistor (IGBT). Key features include:
1. Voltage and Current Ratings: It typically supports a high voltage of up to 600V and a current capacity of approximately 40A, making it suitable for demanding power applications.

2. Low Saturation Voltage: Offers low VCE(sat), which helps reduce power loss and improve efficiency.
3. Fast Switching: Designed for fast switching speeds, enhancing performance in high-frequency applications.
4. Rugged Design: It is robust and reliable, capable of handling high power levels and temperature variations.
5. Thermal Characteristics: Good thermal performance, aiding in effective heat dissipation during operation.
6. Applications: Commonly used in motor drives, inverters, power supplies, and other industrial applications where high efficiency and fast switching are required.
7. Package Type: Often supplied in a TO-220 or similar package, providing ease of mounting and integration into various circuit designs.
These features make the ISL9V3040D3ST-F085C an effective choice for high-power electronic applications requiring efficient energy utilization and reliability.

Pinout

The ISL9V3040D3ST-F085C is an automotive-qualified, IGBT (Insulated Gate Bipolar Transistor) designed for high-speed switching applications. It typically comes in a TO-263 package, which generally features three pins. The primary functions of these pins are:
1. Collector (C): This is the main current-carrying terminal connected to the load. It collects charge carriers from the emitter and enables current flow when the IGBT is turned on.

2. Gate (G): This terminal controls the IGBT's operation. Applying a voltage to the gate allows current to flow between the collector and emitter by creating an electric field that modifies the conductivity of the semiconductor material.
3. Emitter (E): This terminal is the return path for the current flowing through the collector, essentially acting as the output end for the current when the IGBT is conducting.
This specific IGBT model is designed for enhanced electrical performance and reliability in automotive and other demanding environments.

Manufacturer

The ISL9V3040D3ST-F085C is manufactured by ON Semiconductor. ON Semiconductor, now known as onsemi, is a prominent American semiconductor supplier company. It designs, manufactures, and markets a wide range of semiconductor components used in various electronic systems and devices. The company specializes in power and signal management, logic, discrete, and custom devices for automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace, and power applications. onsemi is known for its focus on energy-efficient innovations and solutions, emphasizing sustainability and efficiency in its product offerings.

Application

The ISL9V3040D3ST-F085C is a high-speed IGBT (Insulated Gate Bipolar Transistor) typically used in applications requiring efficient power switching and handling. Its primary application areas include:
1. Motor Drives: Used for controlling and driving electric motors, particularly in industrial and automotive applications.
2. Switching Power Supplies: Ideal for use in power converters and inverters, providing efficient energy conversion.
3. Uninterruptible Power Supplies (UPS): Ensures continuous power flow by managing load switching efficiently.
4. Welders and Induction Heating: Provides quick and efficient switching for high-power industrial processes.
5. Lighting Systems: Utilized in high-efficiency lighting solutions, including LED drivers.
These applications benefit from the ISL9V3040D3ST-F085C's fast switching speed and low power loss characteristics.

Package

The ISL9V3040D3ST-F085C is a TO-252 package, which is a surface-mount package commonly used for transistors and similar semiconductors.

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