Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package | Tube |
| ProductStatus | Active |
| DrivenConfiguration | Low-Side |
| ChannelType | Single |
| NumberofDrivers | 1 |
| GateType | IGBT, N-Channel, P-Channel MOSFET |
| Voltage-Supply | 4.5V ~ 35V |
| LogicVoltage-VILVIH | 0.8V, 3V |
| Current-PeakOutput(SourceSink) | 9A, 9A |
| InputType | Non-Inverting |
| Rise/FallTime(Typ) | 22ns, 15ns |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
Tổng quan
Description
IXDD609SIA is a member of IXYS/ON Semiconductor’s IXDD isolated gate‑driver family. It provides a galvanically isolated interface that drives a power MOSFET or IGBT from a logic‑level input. The device combines a gate‑drive output capable of delivering peak current to rapidly switch the power device with an isolation barrier that separates the control side from the high‑power side, enabling safer and more robust high‑voltage applications.
Typical use cases include switch‑mode power supplies, motor drives, inverters, and other power electronics where fast, reliable gate drive with isolation is needed. The “SIA” suffix denotes a specific packaging/version variant.
For exact electrical specifications (isolation voltage, input threshold, propagation delay, output drive current, supply rails, and recommended operating conditions), consult the official IXDD609SIA datasheet from IXYS/ON Semiconductor.
Typical use cases include switch‑mode power supplies, motor drives, inverters, and other power electronics where fast, reliable gate drive with isolation is needed. The “SIA” suffix denotes a specific packaging/version variant.
For exact electrical specifications (isolation voltage, input threshold, propagation delay, output drive current, supply rails, and recommended operating conditions), consult the official IXDD609SIA datasheet from IXYS/ON Semiconductor.
Features
IXDD609SIA is an isolated gate-driver in the IXDD family. Typical features (variant specifics may vary) include:
- Galvanic isolation between input and output (drives IGBTs/METs safely)
- TTL/CMOS-compatible input
- High peak output current for fast gate charging/discharging
- Undervoltage lockout to prevent mis-triggering
- Protection options (short-circuit/overcurrent awareness and/or thermal shutdown)
- Fast input-to-output propagation
- Wide operating temperature range and supply range
- Compact package (e.g., 8-pin SOIC/DIP)
Note: Exact isolation rating, UVLO thresholds, peak current, propagation delay, and protections depend on the specific revision. For precise specifications, consult the official IXYS/renamed manufacturer datasheet for IXDD609SIA.
- Galvanic isolation between input and output (drives IGBTs/METs safely)
- TTL/CMOS-compatible input
- High peak output current for fast gate charging/discharging
- Undervoltage lockout to prevent mis-triggering
- Protection options (short-circuit/overcurrent awareness and/or thermal shutdown)
- Fast input-to-output propagation
- Wide operating temperature range and supply range
- Compact package (e.g., 8-pin SOIC/DIP)
Note: Exact isolation rating, UVLO thresholds, peak current, propagation delay, and protections depend on the specific revision. For precise specifications, consult the official IXYS/renamed manufacturer datasheet for IXDD609SIA.
Pinout
- Pin count: 8 pins (SO-8/DIP-8 package)
- Function: Isolated gate driver for IGBTs/MOSFETs (single-channel); provides galvanically isolated input-to-output gate drive to drive power transistors.
- Function: Isolated gate driver for IGBTs/MOSFETs (single-channel); provides galvanically isolated input-to-output gate drive to drive power transistors.
Manufacturer
- Manufacturer: IXYS Corporation (now part of Littelfuse).
- What kind of company: A power semiconductor company that designs and manufactures high-voltage/high-current devices and related ICs (e.g., gate drivers, MOSFETs, IGBTs, diodes).
- What kind of company: A power semiconductor company that designs and manufactures high-voltage/high-current devices and related ICs (e.g., gate drivers, MOSFETs, IGBTs, diodes).
Application
IXDD609SIA is a dual ultrafast recovery diode. Typical application areas:
- High-frequency switch-mode power supplies (SMPS) and DC-DC converters
- Bridge rectifiers and freewheeling diodes in power stages
- Motor drives and inverter circuits
- Solar inverters and other renewable-energy systems
- Uninterruptible power supplies (UPS) and telecom power supplies
- Automotive and industrial power electronics requiring fast rectification
- High-frequency switch-mode power supplies (SMPS) and DC-DC converters
- Bridge rectifiers and freewheeling diodes in power stages
- Motor drives and inverter circuits
- Solar inverters and other renewable-energy systems
- Uninterruptible power supplies (UPS) and telecom power supplies
- Automotive and industrial power electronics requiring fast rectification
Package
8-pin SOIC (Small Outline Integrated Circuit) package.
