Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package / Case | Tube |
| Series | Depletion |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 1700 V |
| Current - Continuous Drain(Id) @ 25°C | 1A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 16Ohm @ 500mA, 0V |
| Gate Charge(Qg)(Max) @ Vgs | 47 nC @ 5 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 3090 pF @ 25 V |
| FET Feature | Depletion Mode |
| Power Dissipation (Max) | 290W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263HV |
Tổng quan
Description
The IXTA1N170DHV is a high-voltage N-channel IGBT (Insulated Gate Bipolar Transistor) designed for power switching applications. Key features include:
- Voltage Rating: 1700V (high-voltage operation).
- Current Rating: 1A (low to moderate current handling).
- Low Saturation Voltage (VCE(sat)): Enhances efficiency.
- Fast Switching: Suitable for high-frequency applications.
- Robust Design: Includes built-in diode for inductive load protection.
Commonly used in power supplies, inverters, and industrial systems requiring high-voltage switching. Its compact package (e.g., TO-252) ensures easy integration.
For detailed specs, refer to the datasheet.
- Voltage Rating: 1700V (high-voltage operation).
- Current Rating: 1A (low to moderate current handling).
- Low Saturation Voltage (VCE(sat)): Enhances efficiency.
- Fast Switching: Suitable for high-frequency applications.
- Robust Design: Includes built-in diode for inductive load protection.
Commonly used in power supplies, inverters, and industrial systems requiring high-voltage switching. Its compact package (e.g., TO-252) ensures easy integration.
For detailed specs, refer to the datasheet.
Features
The IXTA1N170DHV is a high-voltage N-channel MOSFET with the following key features:
- Voltage Rating: 1700V drain-source voltage (VDSS), suitable for high-power applications.
- Current Handling: 1A continuous drain current (ID).
- Low On-Resistance: 18Ω typical RDS(on) (at VGS = 10V), reducing conduction losses.
- Fast Switching: Optimized for high-speed switching applications.
- Robust Package: TO-252 (DPAK) for efficient thermal performance.
- Low Gate Charge: Enhances efficiency in high-frequency circuits.
- Avalanche Rated: Improved reliability under inductive loads.
Ideal for power supplies, inverters, and industrial systems requiring high-voltage switching.
- Voltage Rating: 1700V drain-source voltage (VDSS), suitable for high-power applications.
- Current Handling: 1A continuous drain current (ID).
- Low On-Resistance: 18Ω typical RDS(on) (at VGS = 10V), reducing conduction losses.
- Fast Switching: Optimized for high-speed switching applications.
- Robust Package: TO-252 (DPAK) for efficient thermal performance.
- Low Gate Charge: Enhances efficiency in high-frequency circuits.
- Avalanche Rated: Improved reliability under inductive loads.
Ideal for power supplies, inverters, and industrial systems requiring high-voltage switching.
Pinout
The IXTA1N170DHV is a high-voltage N-channel IGBT with a TO-247-3 package, featuring 3 pins:
1. Gate (G) – Controls switching via voltage input.
2. Collector (C) – High-voltage terminal (up to 1700V).
3. Emitter (E) – Current return path.
Key Functions:
- Designed for 1700V/1A applications.
- Low saturation voltage (VCE(sat)).
- Fast switching for high-efficiency power conversion (e.g., inverters, SMPS).
Applications:
- Industrial motor drives, renewable energy systems, and high-voltage power supplies.
The TO-247-3 package ensures robust thermal performance.
1. Gate (G) – Controls switching via voltage input.
2. Collector (C) – High-voltage terminal (up to 1700V).
3. Emitter (E) – Current return path.
Key Functions:
- Designed for 1700V/1A applications.
- Low saturation voltage (VCE(sat)).
- Fast switching for high-efficiency power conversion (e.g., inverters, SMPS).
Applications:
- Industrial motor drives, renewable energy systems, and high-voltage power supplies.
The TO-247-3 package ensures robust thermal performance.
Application
The IXTA1N170DHV is a high-voltage N-channel MOSFET designed for applications requiring robust performance and efficiency. Key application areas include:
- Power Supplies: Used in switch-mode power supplies (SMPS) and DC-DC converters.
- Industrial Systems: Suitable for motor drives, inverters, and industrial automation.
- Renewable Energy: Employed in solar inverters and energy storage systems.
- High-Voltage Switching: Ideal for circuits requiring fast switching at high voltages (up to 1700V).
- Electric Vehicles (EVs): Used in charging systems and power management.
Its high voltage tolerance and low on-resistance make it efficient for demanding power electronics.
- Power Supplies: Used in switch-mode power supplies (SMPS) and DC-DC converters.
- Industrial Systems: Suitable for motor drives, inverters, and industrial automation.
- Renewable Energy: Employed in solar inverters and energy storage systems.
- High-Voltage Switching: Ideal for circuits requiring fast switching at high voltages (up to 1700V).
- Electric Vehicles (EVs): Used in charging systems and power management.
Its high voltage tolerance and low on-resistance make it efficient for demanding power electronics.
Package
The IXTA1N170DHV is a high-voltage N-channel MOSFET typically available in a TO-263 (D²PAK) surface-mount package. This package offers efficient thermal performance and is suitable for high-power applications. Key features include a 1700V drain-source voltage rating and a compact, robust design for industrial use.
