IXTA3N150HV

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IXTA3N150HV

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MOSFET N-CH 1500V 3A TO263

  • Nhà sản xuấtSản phẩm IXYS

  • Ông. Phần #IXTA3N150HV

  • Gói TO-263-3

  • Có sẵn6663

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Thông số kỹ thuật

thuộc tính Giá trị
Package / Case Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1500 V
Current - Continuous Drain(Id) @ 25°C 3A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 7.3Ohm @ 1.5A, 10V
Vgs(th)(Max) @ Id 5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 38.6 nC @ 10 V
Vgs(Max) ±30V
Input Capacitance(Ciss)(Max) @ Vds 1375 pF @ 25 V
Power Dissipation (Max) 250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263AA

Tổng quan

Description

The IXTA3N150HV is an N-channel enhancement-mode MOSFET designed for high-voltage applications. Manufactured by IXYS, this power MOSFET is known for its robust performance, featuring a maximum drain-source voltage (V_DS) of 1500 volts and a continuous drain current (I_D) of up to 3 amperes. Its low on-state resistance (R_DS(on)) ensures efficient operation with minimal power loss, making it suitable for applications requiring high efficiency and reliability.
The IXTA3N150HV is housed in a TO-220 package, providing good thermal performance and ease of mounting in various circuit designs. It is often used in power supply circuits, switching applications, and industrial equipment where high-voltage handling is crucial. Additionally, the device supports fast switching speeds, contributing to its efficiency in managing power conversion and distribution tasks.
Overall, the IXTA3N150HV is a versatile and reliable component for engineers seeking a high-voltage MOSFET solution capable of handling demanding operational conditions while maintaining energy efficiency.

Equivalent

The IXTA3N150HV is a high-voltage MOSFET. Equivalent products typically include MOSFETs with similar voltage and current ratings, such as the Infineon IPP65R190C7 or ON Semiconductor FDPF12N50UT. It's important to verify specifications like maximum voltage, current, Rds(on), and package type to ensure compatibility. Always consult manufacturer datasheets or cross-reference tools for precise equivalents.

Features

The IXTA3N150HV is an N-channel MOSFET designed for various applications requiring efficient power management. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage of 150V, making it suitable for medium to high voltage applications.
2. Current Rating: The device supports a continuous drain current of up to 3A, which is suitable for moderate power applications.
3. On-Resistance: It features a low on-resistance, typically around 1.4 ohms, which contributes to better efficiency by reducing power losses during operation.
4. Gate Threshold Voltage: The gate threshold voltage is typically between 2V to 4V, allowing it to be driven by standard logic levels.
5. Package Type: The IXTA3N150HV comes in a TO-220 package, offering ease of mounting and good thermal performance.
6. Thermal Management: It supports efficient heat dissipation, making it suitable for applications where thermal performance is critical.
These features make the IXTA3N150HV ideal for use in power supply circuits, motor control, and other applications requiring efficient switching.

Pinout

The IXTA3N150HV is a high-voltage N-channel MOSFET developed by IXYS Corporation. It comes in a TO-220 package, which typically has three pins. The pin count and functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, you can turn the MOSFET on or off, allowing or stopping the flow of current between the drain and source.
2. Drain (D): This is the pin through which the main current flows when the MOSFET is in the "on" state. It is connected to the load in most applications.
3. Source (S): This pin is connected to the ground or negative side of the circuit. It serves as the return path for the current flowing through the MOSFET.
The IXTA3N150HV is designed for high-voltage applications, with a maximum drain-source voltage (V_DS) of 1500V and a continuous drain current (I_D) of approximately 3A, making it suitable for switching and amplification applications in high-voltage circuits.

Manufacturer

The IXTA3N150HV is manufactured by IXYS Corporation. IXYS is a semiconductor company that specializes in the development and production of power semiconductors, integrated circuits, and other related products. Founded in 1983 and headquartered in Milpitas, California, IXYS focuses on providing energy-efficient solutions for a wide range of applications, including industrial, telecommunications, consumer electronics, and renewable energy sectors. The company is known for its innovation in power management technologies, contributing to improved energy efficiency and performance in electronic systems. In 2018, IXYS was acquired by Littelfuse, Inc., a global manufacturer of circuit protection products, further expanding its reach and product offerings in the semiconductor industry.

Application

The IXTA3N150HV is a high-voltage N-channel MOSFET commonly used in applications requiring efficient power management. Its key application areas include:
1. Switching Power Supplies: Used for efficient voltage conversion and regulation.
2. Motor Control: Ideal for driving motors in industrial and consumer electronics.
3. LED Lighting: Helps in controlling LEDs in lighting systems.
4. Battery Management: Used in charging and discharging circuits for battery-powered devices.
5. Power Inverters: Facilitates DC to AC conversion in inverter systems.
6. Audio Amplifiers: Provides efficient power delivery in audio amplification circuits.
Its high voltage capability and efficiency make it suitable for these applications.

Package

The IXTA3N150HV is a power MOSFET from IXYS, and it typically comes in a TO-220 package type.

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