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IXXX200N65B4
+BOMIGBT PT 650V 370A PLUS247
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Nhà sản xuấtSản phẩm IXYS
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Ông. Phần #IXXX200N65B4
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Series | GenX4™, XPT™ |
| Part Status | Active |
| IGBT Type | PT |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector (Ic) (Max) | 370 A |
| Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 160A |
| Power - Max | 1150 W |
| Switching Energy | 4.4mJ (on), 2.2mJ (off) |
| Input Type | Standard |
| Gate Charge | 553 nC |
| Td (on / off) @ 25°C | 62ns/245ns |
| Test Condition | 400V, 100A, 1Ohm, 15V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 Variant |
| Supplier Device Package | PLUS247™-3 |
| Base Product Number | IXXX200 |
| Current - Collector Pulsed (Icm) | 1000 A |
Tổng quan
Description
The device features a robust gate oxide structure, ensuring reliability under demanding conditions. Additionally, it is packaged in a TO-247 or similar format, allowing for effective heat dissipation. This MOSFET is commonly used in renewable energy systems, such as solar inverters, and in industrial automation where high power and voltage levels are encountered.
Overall, the IXXX200N65B4 is a key component for engineers aiming to design efficient and reliable power electronic systems.
Equivalent
Features
1. Voltage Rating: It typically has a maximum drain-source voltage (V_DS) of 650V, making it suitable for high-voltage applications.
2. Current Handling: With a continuous drain current (I_D) rating of around 200A, it is capable of handling substantial loads.
3. Low On-Resistance: It offers a low on-resistance (R_DS(on)), which minimizes conduction losses, enhancing efficiency in power conversion.
4. Fast Switching Speed: The device supports fast switching, reducing losses during operation and improving overall efficiency in switching applications.
5. Thermal Performance: It features a robust thermal management capability, enabling it to operate effectively in high-temperature environments.
6. Package Type: Usually available in a TO-247 or similar package, ensuring ease of handling and assembly in various designs.
These features make the IXXX200N65B4 suitable for applications in power supplies, motor drives, and other industrial power electronics.
Pinout
1. Gate (G) - Controls the on/off state of the MOSFET.
2. Drain (D) - Connects to the load and carries the current when the device is on.
3. Source (S) - Connects to ground or the negative side of the load.
This device is optimized for high efficiency and low conduction loss, making it suitable for applications such as power supplies, motor drives, and converters. The specific pin arrangement may vary slightly depending on the package type, so it's essential to consult the manufacturer's datasheet for precise pin configuration and electrical characteristics.
Manufacturer
The IXXX200N65B4 is specifically a silicon carbide (SiC) MOSFET, designed for high-efficiency power conversion and management. Infineon's focus on innovation and sustainable technology positions it as a key player in the semiconductor industry, catering to the growing demand for energy-efficient solutions and advancements in electric mobility, renewable energy, and smart infrastructure.
Application
1. Inverters: For renewable energy systems like solar and wind power.
2. Motor Drives: In industrial automation and electric vehicles for efficient motor control.
3. Power Supplies: In high-efficiency switch-mode power supplies (SMPS).
4. Welding Equipment: In arc and resistance welding applications.
5. HVAC Systems: For controlling compressors and fan motors.
Its high voltage and current handling capabilities make it ideal for these demanding applications.