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JANTX2N2222AUB
+BOMTRANS NPN 50V 0.8A UB
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Nhà sản xuấtCông nghệ Microchip
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Ông. Phần #JANTX2N2222AUB
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Gói 3-SMD, No Lead
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Có sẵn5248
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package / Case | Bulk |
| Series | Military, MIL-PRF-19500/255 |
| Part Status | Active |
| Transistor Type | NPN |
| Current - Collector(Ic)(Max) | 800 mA |
| Voltage - Collector Emitter Breakdown(Max) | 50 V |
| Vce Saturation(Max) @ Ib Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff(Max) | 50nA |
| DC Current Gain(h FE)(Min) @ Ic Vce | 100 @ 150mA, 10V |
| Power - Max | 500 mW |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Mounting Type | Surface Mount |
Tổng quan
Description
Key features of the JANTX2N2222AUB include:
1. NPN Transistor: Primarily used for switching and amplification purposes.
2. Low Power Consumption: Suitable for low-power circuits.
3. High Reliability: Designed to operate in harsh environmental conditions, ensuring durability and consistent performance.
4. Versatile Applications: Commonly used in signal processing, amplification, and switching in both analog and digital circuits.
5. TO-18 Package: Comes in a metal can package, which enhances thermal performance and provides a robust physical form factor.
This transistor is particularly favored in critical applications where reliability and specifications compliance are vital, such as in defense and space projects.
Equivalent
Features
1. Package Type: It is housed in a TO-18 metal can package, providing robust physical protection and excellent thermal conductivity.
2. Collector-Emitter Voltage: It can handle a maximum collector-emitter voltage (V_CE) of 30V.
3. Collector Current: The maximum collector current (I_C) is 800mA, allowing it to drive moderate loads.
4. Power Dissipation: It supports a power dissipation of 500mW, suitable for various applications without extensive cooling measures.
5. Gain: The transistor offers a current gain (h_FE) range of 100 to 300, ensuring efficient amplification.
6. Frequency: High transition frequency (f_T) of 250 MHz, suitable for RF and high-speed switching applications.
7. Temperature Range: Operates reliably over a wide temperature range, from -65°C to +200°C, making it ideal for harsh environments.
These features make the JANTX2N2222AUB suitable for high-performance, aerospace, and defense applications, where reliability is critical.
Pinout
1. Emitter (E): The pin through which the charge carriers (electrons in the case of an NPN transistor) exit the transistor.
2. Base (B): The pin that controls the transistor's operation. A small current at the base allows a larger current to flow from the collector to the emitter.
3. Collector (C): The pin through which the charge carriers enter the transistor.
The JANTX2N2222AUB is widely used in switching and amplification applications due to its robust construction and reliable performance under a range of conditions. It is suitable for military and aerospace applications where high reliability is required.