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JANTXV2N6849
+BOMMOSFET P-CH 100V 6.5A TO205AF
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Nhà sản xuấtTập đoàn Microsemi
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Ông. Phần #JANTXV2N6849
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Có sẵn6170
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 320mOhm @ 6.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 34.8 nC @ 10 V |
| Vgs (Max) | ±20V |
| Power Dissipation (Max) | 800mW (Ta), 25W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | Military |
| Qualification | MIL-PRF-19500/564 |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-205AF (TO-39) |
| Package / Case | TO-205AF Metal Can |
Tổng quan
Description
The JANTXV2N6849 features a hermetically sealed package, ensuring protection against moisture and contaminants, which is critical for its intended applications. Users should refer to the manufacturer's datasheet for detailed specifications, thermal characteristics, and recommended operating conditions. Overall, the JANTXV2N6849 is an essential component for ensuring robust performance in demanding electronic systems.
Equivalent
Features
1. Voltage Rating: Typically rated for 60V, making it suitable for a variety of applications.
2. Current Rating: Capable of handling high currents, often around 9A to 12A.
3. On-Resistance (Rds(on)): Low Rds(on) value, improving efficiency and reducing heat generation during operation.
4. Gate Threshold Voltage: Compatible with standard drive voltages, facilitating easy integration into circuits.
5. Hermetic Package: Available in a robust package that enhances reliability in harsh environments.
6. Enhanced Reliability: Qualified for military standards, ensuring durability and performance under extreme conditions.
7. Fast Switching Speed: Allows for efficient operation in switching applications.
This combination of features makes the JANTXV2N6849 ideal for power management, motor control, and other demanding applications in aerospace and defense electronics.
Pinout
Pin Functions:
1. Gate (G): This pin controls the MOSFET's operation by applying a voltage to turn it on or off.
2. Drain (D): This is the output pin where the high-voltage load is connected. It allows current to flow from the drain to the source when the device is on.
3. Source (S): This pin is typically connected to ground or the negative side of the circuit. It serves as the reference point for the gate voltage.
The JANTXV2N6849 is designed for high-voltage applications and has specifications that include a maximum drain-source voltage (V_DS) of up to 1500V.
Manufacturer
Founded in 1999, ON Semiconductor has grown through a series of acquisitions and now operates globally. It focuses on energy-efficient solutions and is committed to innovation and sustainability in its product offerings. Their components are widely used in applications that require high performance and reliability.
The JANTXV2N6849 specifically is a type of N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) used in military and aerospace applications due to its enhanced reliability and performance characteristics. As a manufacturer, ON Semiconductor emphasizes quality and compliance with industry standards, making its products suitable for demanding environments.