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L6387ED
+BOMIC GATE DRVR HALF-BRIDGE 8SO
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Nhà sản xuấtSTMicroelectronics
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Ông. Phần #L6387ED
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Bảng dữ liệu L6387ED DataSheet
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Gói SO-8
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Có sẵn3145
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package | Tube |
| ProductStatus | Active |
| DrivenConfiguration | Half-Bridge |
| ChannelType | Independent |
| NumberofDrivers | 2 |
| GateType | IGBT, N-Channel MOSFET |
| Voltage-Supply | 17V (Max) |
| LogicVoltage-VILVIH | 1.5V, 3.6V |
| Current-PeakOutput(SourceSink) | 400mA, 650mA |
| InputType | Inverting |
| HighSideVoltage-Max(Bootstrap) | 600 V |
| Rise/FallTime(Typ) | 50ns, 30ns |
| OperatingTemperature | -45°C ~ 125°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
Tổng quan
Description
For example, if L6387ED pertains to a field like engineering, education, or computer science, the course might include an overview of essential theories, methodologies, and tools relevant to that field. Students could expect to learn about key terminology, historical developments, and current trends or applications. The course may also involve lectures, discussions, and practical exercises to enhance understanding and encourage engagement with the subject matter.
To gain more insight into what "Introduction to L6387ED" specifically entails, it would be best to consult the academic institution's course catalog or contact the relevant department for detailed information.
Equivalent
1. IRS2110 by Infineon (formerly International Rectifier)
2. MIC4427 by Microchip Technology
3. FAN7392 by ON Semiconductor
4. UCC27714 by Texas Instruments
These alternatives feature similar high-side and low-side gate-driving capabilities, though specific parameters like voltage ratings and package type should be checked for compatibility.
Features
1. High-Voltage Capability: It can handle voltages up to 600V, making it suitable for a wide range of high-power applications.
2. Integrated Bootstrap Diode: Simplifies the design by eliminating the need for an external bootstrap diode, which helps in charging the high-side gate drive supply.
3. Low-Side and High-Side Drivers: Provides separate outputs for both low-side and high-side MOSFETs or IGBTs, ensuring efficient switching.
4. Under-Voltage Lockout (UVLO): Protects the device from operating at insufficient voltage levels, thereby preventing malfunction.
5. dV/dt Immunity: Offers robustness against fast voltage changes, ensuring stable operation in noisy environments.
6. Adjustable Dead Time: Allows for control over the switching period between the high-side and low-side drivers to prevent shoot-through.
These features make the L6387ED suitable for efficient and reliable power management in various electronic applications.
Pinout
1. VCC: Supply voltage for the low-side section.
2. IN: Logic input for controlling the gate driver outputs.
3. BOOT: Bootstrap pin for the high-side driver supply.
4. OUT_H: High-side gate driver output.
5. VSO: High-side floating supply voltage.
6. OUT_L: Low-side gate driver output.
7. GND: Ground reference.
8. VCC: Supply voltage for the high-side section.
The L6387ED features include undervoltage lockout, dV/dt immunity, and the ability to drive high-side and low-side power MOSFETs or IGBTs effectively. These features make it suitable for motor drives, inverters, and other applications requiring robust gate driving capabilities.
Manufacturer
Application
1. Industrial Motor Drives: It is used in driving motors for industrial applications, offering efficient control and energy management.
2. Home Appliances: Employed in household appliances for efficient motor control, improving performance and energy efficiency.
3. HVAC Systems: Utilized in heating, ventilation, and air conditioning systems for optimizing motor function and reducing energy consumption.
4. Power Tools: Ensures precise and efficient motor operation in power tools, enhancing performance and reliability.
5. Automation Systems: Plays a role in automated systems, providing reliable and efficient motor control for various automated processes.
Its features like high voltage capability, integrated bootstrap diode, and robust protection mechanisms make it suitable for these applications.