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M58BW016FB7T3F
+BOMIC FLASH 16MBIT CFI 80PQFP
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Nhà sản xuấtAlliance Memory, Inc.
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Ông. Phần #M58BW016FB7T3F
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Có sẵn7114
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Part Status | Active |
| Digi Key Programmable | Not Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - Boot Block |
| Memory Size | 16Mbit |
| Memory Organization | 512K x 32 |
| Memory Interface | CFI |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 125°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 80-BQFP |
| Supplier Device Package | 80-PQFP (14x20) |
| Base Product Number | M58BW016 |
| Access Time | 70 ns |
Tổng quan
Description
Key features of the M58BW016FB7T3F include:
1. Capacity: Offers a storage capacity of 16 megabits.
2. Architecture: Organized typically in a way that allows byte or word access, depending on specific device configuration.
3. Endurance: Can endure a significant number of write/erase cycles, though generally less than NAND flash.
4. Reliability: Provides high data integrity and reliability, often used in applications where these aspects are critical.
5. Interface: Usually operates with standard interfaces, allowing for integration into various systems without the need for specialized communication protocols.
This type of memory is commonly found in embedded systems, mobile devices, and other electronics that require efficient and reliable data storage solutions.
Equivalent
1. Micron MT28EW016ABA1HPC
2. Cypress S29GL016A
3. Winbond W29GL016C
4. Spansion S29AL016D
When considering equivalents, verify compatibility in terms of voltage, package type, and performance to ensure they meet your specific requirements.
Features
1. Memory Organization: It offers a 16Mb capacity organized as 1M x 16 bits.
2. Architecture: The device operates with a single supply voltage and supports asynchronous read operations.
3. Sector Erase: The chip allows for sector-based erasure, enabling sections to be erased and rewritten without affecting the entire chip.
4. Write Protection: It includes features to prevent accidental overwriting or erasure of data.
5. Access Time: The device typically offers fast access times, making it suitable for applications requiring quick data retrieval.
6. Endurance: It provides a high level of endurance, with a significant number of program/erase cycles, ensuring long-term reliability.
7. Operating Temperature: Designed to function across a wide range of temperatures, making it versatile for different environments.
8. Package: It is available in various package types to suit different application requirements.
These features make the M58BW016FB7T3F suitable for embedded systems, consumer electronics, and other applications requiring reliable non-volatile memory.
Pinout
1. Address Inputs (A0-A19): These pins are used to address specific memory locations.
2. Data Inputs/Outputs (DQ0-DQ15): These pins are used for data transfer to and from the memory.
3. Chip Enable (E\_): This pin activates the chip when set to a low state.
4. Output Enable (G\_): This pin controls the data output buffers, allowing data to be read.
5. Write Enable (W\_): This pin controls the writing operations.
6. Reset (RP\_): This pin resets the memory, clearing any ongoing operations.
7. Write Protect (WP\_): This pin offers a hardware method to protect blocks from being written to.
8. Other pins include VCC and VSS for power supply and ground, as well as specific pins for advanced functions like block protection and identification.
Please consult the specific datasheet for detailed pinout diagrams and descriptions.