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MMBFJ108
+BOMJFET N-CH 25V 350MW SSOT3
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Nhà sản xuấtonsemi
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Ông. Phần #MMBFJ108
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Bảng dữ liệu MMBFJ108 DataSheet
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Gói TO-236-3
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Supplier | onsemi |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | N-Channel |
| Voltage - Breakdown(V(BR)GSS) | 25 V |
| Current - Drain(Idss) @ Vds(Vgs=0) | 80 mA @ 15 V |
| Voltage - Cutoff(VG Soff) @ Id | 3 V @ 10 nA |
| Rds On | 8 Ohms |
| Power - Max | 350 mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Tổng quan
Description
Key features include its low input capacitance, high input impedance, and low power consumption. The MMBFJ108 typically comes in a small SOT-23 package, making it suitable for compact circuit designs. Its electrical characteristics include a drain-source voltage rating, gate-source cutoff voltage, and a specified range of drain-source current, which makes it versatile for various electronic applications.
When designing circuits with the MMBFJ108, it's essential to consider parameters like cutoff frequency, voltage handling capacities, and thermal management to ensure optimal performance and reliability. It is widely used in applications ranging from analog signal processing to frequency modulation systems.
Equivalent
1. J108 - A similar JFET transistor with comparable specifications.
2. MMBFJ112 - Another JFET which can often be used as a substitute in some circuits.
3. 2N5484 or 2N5485 - These are also JFETs that may serve as alternatives, depending on the specific circuit requirements.
Always check the datasheets to ensure compatibility in your application.
Features
1. N-Channel JFET: The MMBFJ108 operates as an N-channel device, meaning it controls electron flow from source to drain.
2. Low On-Resistance: It typically offers low on-resistance, which makes it efficient for current flow with minimal voltage drop.
3. High Input Impedance: This characteristic allows it to be used in circuits where minimal loading of preceding stages is necessary.
4. Gate-Source Voltage (Vgs): The transistor is controlled through the gate, with specific voltage levels needed to switch it on or off.
5. Low Noise: Suitable for applications requiring minimal noise interference, such as audio amplification.
6. Small Package: Often comes in a small, surface-mount package, making it ideal for compact circuit designs.
7. Common Applications: Used in analog switches, amplifiers, and signal processing circuits.
Overall, the MMBFJ108’s features make it suitable for high-performance, low-noise applications requiring small form factor components.
Pinout
1. Gate (G): This pin controls the current flow between the drain and source, effectively turning the transistor on or off.
2. Source (S): This is the terminal through which the carriers enter the channel. In an n-channel JFET like the MMBFJ108, the source is typically connected to a negative voltage or ground.
3. Drain (D): This is the terminal through which the carriers leave the channel. The current flows from the drain to the source when the JFET is on.
The SOT-23 package is advantageous for its compact size, allowing it to be used in densely populated circuit boards.