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MMBT2484LT1G
+BOMTRANS NPN 60V 0.1A SOT23-3
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Nhà sản xuấtonsemi
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Ông. Phần #MMBT2484LT1G
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Bảng dữ liệu MMBT2484LT1G DataSheet
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Gói TO-236-3
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Có sẵn20747
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Supplier | onsemi |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| Transistor Type | NPN |
| Current - Collector(Ic)(Max) | 100 mA |
| Voltage - Collector Emitter Breakdown(Max) | 60 V |
| Vce Saturation(Max) @ Ib Ic | 350mV @ 100µA, 1mA |
| Current - Collector Cutoff(Max) | 10nA (ICBO) |
| DC Current Gain(h FE)(Min) @ Ic Vce | 250 @ 1mA, 5V |
| Power - Max | 225 mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Tổng quan
Description
The MMBT2484LT1G is a NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Manufactured by ON Semiconductor, this device is part of the SOT-23 package series, making it suitable for surface-mount technology (SMT) applications. It offers a collector-emitter voltage (Vceo) of 30V, a collector current (Ic) of 200mA, and a power dissipation of about 225mW, making it versatile for various low-power electronic circuits.
Key features of the MMBT2484LT1G include its fast switching speed and reliable performance in both analog and digital circuits. The transistor's small form factor allows for efficient space usage on printed circuit boards (PCBs), integral in compact device designs. It is often used in signal amplification, low-power switching, and driver stages for various electronic components. With its robust construction, the MMBT2484LT1G is suitable for automotive, industrial, and consumer electronics applications, ensuring stable operation across a wide range of temperatures and conditions.
Key features of the MMBT2484LT1G include its fast switching speed and reliable performance in both analog and digital circuits. The transistor's small form factor allows for efficient space usage on printed circuit boards (PCBs), integral in compact device designs. It is often used in signal amplification, low-power switching, and driver stages for various electronic components. With its robust construction, the MMBT2484LT1G is suitable for automotive, industrial, and consumer electronics applications, ensuring stable operation across a wide range of temperatures and conditions.
Equivalent
The MMBT2484LT1G is an NPN bipolar junction transistor. Equivalent products include:
1. BC848 (or BC848A/B/C) - General-purpose NPN transistors
2. 2N3904 - Common NPN transistor
3. BC546 - Low noise NPN transistor
When substituting, ensure that the electrical characteristics such as current, voltage, and power ratings match or exceed those of the MMBT2484LT1G. Always verify the datasheets to ensure compatibility with your specific application.
1. BC848 (or BC848A/B/C) - General-purpose NPN transistors
2. 2N3904 - Common NPN transistor
3. BC546 - Low noise NPN transistor
When substituting, ensure that the electrical characteristics such as current, voltage, and power ratings match or exceed those of the MMBT2484LT1G. Always verify the datasheets to ensure compatibility with your specific application.
Features
The MMBT2484LT1G is an NPN bipolar junction transistor (BJT) commonly used in switching and amplification applications. Key features include:
1. Package Type: Available in a compact SOT-23 surface-mount package, making it suitable for space-constrained applications.
2. Collector-Emitter Voltage (Vceo): The transistor can handle a maximum Vceo of 30V.
3. Collector Current (Ic): It supports a continuous collector current of up to 100 mA.
4. Power Dissipation: The device has a power dissipation rating of 225 mW.
5. Transition Frequency (fT): Offers a high transition frequency of around 250 MHz, suitable for RF applications.
6. Gain: Features a current gain (hFE) typically ranging from 100 to 300, providing good amplification capabilities.
7. Robust Performance: Designed to operate effectively over a wide temperature range, ensuring reliability in various environments.
These features make the MMBT2484LT1G a versatile choice for general-purpose switching and amplification tasks in electronic circuits.
1. Package Type: Available in a compact SOT-23 surface-mount package, making it suitable for space-constrained applications.
2. Collector-Emitter Voltage (Vceo): The transistor can handle a maximum Vceo of 30V.
3. Collector Current (Ic): It supports a continuous collector current of up to 100 mA.
4. Power Dissipation: The device has a power dissipation rating of 225 mW.
5. Transition Frequency (fT): Offers a high transition frequency of around 250 MHz, suitable for RF applications.
6. Gain: Features a current gain (hFE) typically ranging from 100 to 300, providing good amplification capabilities.
7. Robust Performance: Designed to operate effectively over a wide temperature range, ensuring reliability in various environments.
These features make the MMBT2484LT1G a versatile choice for general-purpose switching and amplification tasks in electronic circuits.
Pinout
The MMBT2484LT1G is a NPN bipolar junction transistor. It is housed in a SOT-23 package, which typically has three pins. The pin configuration and their functions are as follows:
1. Pin 1 (Emitter): The emitter is the region from which charge carriers (electrons) are emitted into the base region.
2. Pin 2 (Base): The base is the control terminal of the transistor. It modulates the flow of carriers and hence the current flowing through the collector to emitter.
3. Pin 3 (Collector): The collector is the region that collects charge carriers from the emitter. It is the output terminal where the amplified current is typically extracted.
The MMBT2484LT1G is used in amplification and switching applications due to its moderate current and voltage ratings, making it suitable for small signal applications.
1. Pin 1 (Emitter): The emitter is the region from which charge carriers (electrons) are emitted into the base region.
2. Pin 2 (Base): The base is the control terminal of the transistor. It modulates the flow of carriers and hence the current flowing through the collector to emitter.
3. Pin 3 (Collector): The collector is the region that collects charge carriers from the emitter. It is the output terminal where the amplified current is typically extracted.
The MMBT2484LT1G is used in amplification and switching applications due to its moderate current and voltage ratings, making it suitable for small signal applications.
Manufacturer
The MMBT2484LT1G is manufactured by ON Semiconductor, now known as onsemi. Onsemi is a leading semiconductor company that specializes in designing and manufacturing a wide range of semiconductor solutions. The company provides high-performance, energy-efficient silicon solutions for various applications, including automotive, industrial, consumer electronics, communications, and computing. Their product portfolio includes power and signal management, logic, discrete, and custom devices. Onsemi is known for its focus on energy-efficient innovations and plays a significant role in advancing technologies for electric vehicles, smart power grids, and other next-generation applications.
Application
The MMBT2484LT1G is a general-purpose NPN silicon transistor commonly used in various electronic applications. Its primary application areas include:
1. Signal Amplification: Used in amplifiers to boost weak signals.
2. Switching: Employed in switching circuits for controlling loads or other components.
3. Oscillator Circuits: Utilized in creating oscillations for timing and frequency generation.
4. Voltage Regulation: Acts in voltage regulator circuits for maintaining stable voltage levels.
5. Digital Logic Circuits: Used in digital electronics for interfacing and signal processing.
Its compact SOT-23 package makes it suitable for space-constrained applications in consumer electronics, automotive, and industrial equipment.
1. Signal Amplification: Used in amplifiers to boost weak signals.
2. Switching: Employed in switching circuits for controlling loads or other components.
3. Oscillator Circuits: Utilized in creating oscillations for timing and frequency generation.
4. Voltage Regulation: Acts in voltage regulator circuits for maintaining stable voltage levels.
5. Digital Logic Circuits: Used in digital electronics for interfacing and signal processing.
Its compact SOT-23 package makes it suitable for space-constrained applications in consumer electronics, automotive, and industrial equipment.
Package
The MMBT2484LT1G is a surface-mount transistor in a SOT-23 package. This package type is compact, suitable for high-density PCB designs, and commonly used for small electronic components requiring minimal space.
