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MMBT3904LT1
+BOMBipolar Transistors - BJT NPN GENERAL PURPOSE
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Nhà sản xuấtonsemi
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Ông. Phần #MMBT3904LT1
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Bảng dữ liệu MMBT3904LT1 DataSheet
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| thuộc tính | Giá trị |
| Packaging | Cut Tape |
| StandardPackQty | 3000 |
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Description
Key features include:
1. Package: It is commonly available in a small SOT-23 surface-mount package, suitable for compact electronic circuit designs.
2. Voltage and Current Ratings: The collector-emitter voltage (V_CE) is typically rated at 40V, and it can handle a continuous collector current (I_C) of up to 200 mA.
3. Transition Frequency: It offers a high transition frequency, making it suitable for high-speed switching operations.
4. Applications: The MMBT3904LT1 is ideal for use in signal processing, amplifiers, and switching circuits.
5. Complementary Pair: It often pairs with MMBT3906 (PNP transistor) for complementary push-pull amplifier configurations.
The MMBT3904LT1 is valued in electronics for its balance of performance, size, and cost-effectiveness.
Equivalent
1. 2N3904
2. BC547
3. PN2222
4. BC337
5. KSC1815
These transistors have similar electrical characteristics and can often be used as substitutes in a variety of electronic circuits. Always check the datasheet for specific parameters to ensure compatibility within your application.
Features
1. Polarity: NPN.
2. Collector-Emitter Voltage (Vceo): 40V, which indicates the maximum voltage the transistor can handle between the collector and emitter.
3. Collector Current (Ic): 200mA, which specifies the maximum current the transistor can conduct.
4. Power Dissipation: Typically around 200mW, allowing it to manage moderate power levels.
5. Gain (hFE): The DC current gain ranges from 100 to 300, providing good amplification capabilities.
6. Package: Available in a compact SOT-23 surface-mount package for efficient space utilization in PCB designs.
7. Applications: Suitable for switching and amplification purposes in audio, signal processing, and general switching applications.
8. Temperature Range: Operates effectively over a wide temperature range, typically from -55°C to +150°C.
These specifications make the MMBT3904LT1 a popular choice for low-power amplification and switching tasks in various electronic circuits.
Pinout
1. Pin 1 (Emitter): The emitter is the source of charge carriers in the transistor and is typically connected to ground or the negative side of the circuit in an NPN configuration.
2. Pin 2 (Base): The base is the control terminal of the transistor. A small current or voltage applied to the base controls the larger current flow between the collector and emitter.
3. Pin 3 (Collector): The collector is the output terminal where the controlled current flows, usually connected to the positive side of the circuit in an NPN configuration.
The MMBT3904LT1 is widely used due to its ability to handle moderate current and voltage levels, making it suitable for low-power applications. Its compact SOT-23 package allows for efficient use of space in electronic circuits.