Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | MMQA |
| ProductStatus | Active |
| Type | Zener |
| UnidirectionalChannels | 4 |
| Voltage-ReverseStandoff(Typ) | 21V (Max) |
| Voltage-Breakdown(Min) | 25.7V |
| Voltage-Clamping(Max)@Ipp | 39V |
| Current-PeakPulse(10/1000µs) | 615mA (8/20µs) |
| Power-PeakPulse | 150W |
| PowerLineProtection | No |
| Applications | General Purpose |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | SC-74, SOT-457 |
Tổng quan
Description
The MMQA27VT1G is a P-channel MOSFET from ON Semiconductor, designed for low-voltage, high-efficiency switching applications. Key features include:
- Voltage Rating: -20V (Drain-Source)
- Current Rating: -4.3A (Continuous Drain)
- Low On-Resistance (RDS(on)): 47mΩ (max) @ VGS = -4.5V
- Fast Switching: Optimized for power management in portable devices, load switches, and DC-DC converters.
- Compact Package: SOT-23 (3-pin), suitable for space-constrained designs.
Ideal for battery-powered systems, power distribution, and low-side switching, it offers efficient performance with minimal power loss.
For detailed specs, refer to the datasheet.
- Voltage Rating: -20V (Drain-Source)
- Current Rating: -4.3A (Continuous Drain)
- Low On-Resistance (RDS(on)): 47mΩ (max) @ VGS = -4.5V
- Fast Switching: Optimized for power management in portable devices, load switches, and DC-DC converters.
- Compact Package: SOT-23 (3-pin), suitable for space-constrained designs.
Ideal for battery-powered systems, power distribution, and low-side switching, it offers efficient performance with minimal power loss.
For detailed specs, refer to the datasheet.
Equivalent
Equivalent products to the MMQA27VT1G (a dual N-channel MOSFET) include:
- FDS6898A (Fairchild/ON Semiconductor)
- SI4562DY (Vishay)
- DMN2019LSN (Diodes Incorporated)
- BSS138DW (Nexperia, for lower current)
These alternatives offer similar specifications (e.g., dual N-channel, SOT-363 package, ~20V VDS). Verify exact parameters (current, RDS(on)) for your application.
- FDS6898A (Fairchild/ON Semiconductor)
- SI4562DY (Vishay)
- DMN2019LSN (Diodes Incorporated)
- BSS138DW (Nexperia, for lower current)
These alternatives offer similar specifications (e.g., dual N-channel, SOT-363 package, ~20V VDS). Verify exact parameters (current, RDS(on)) for your application.
Features
The MMQA27VT1G is a 27V, 500mA PNP Bipolar Junction Transistor (BJT) with the following key features:
- Voltage Rating: 27V (Collector-Emitter, VCEO)
- Current Rating: 500mA (Continuous Collector Current, IC)
- Low Saturation Voltage: Ensures efficient switching
- High Current Gain (hFE): Typically 100-300 for stable amplification
- Compact SOT-23 Package: Space-saving surface-mount design
- Fast Switching Speed: Suitable for general-purpose amplification and switching
- Low Power Dissipation: 225mW (Tamb ≤ 25°C)
Ideal for low-power circuits, signal amplification, and switching applications in portable electronics.
- Voltage Rating: 27V (Collector-Emitter, VCEO)
- Current Rating: 500mA (Continuous Collector Current, IC)
- Low Saturation Voltage: Ensures efficient switching
- High Current Gain (hFE): Typically 100-300 for stable amplification
- Compact SOT-23 Package: Space-saving surface-mount design
- Fast Switching Speed: Suitable for general-purpose amplification and switching
- Low Power Dissipation: 225mW (Tamb ≤ 25°C)
Ideal for low-power circuits, signal amplification, and switching applications in portable electronics.
Package
The MMQA27VT1G is a MOSFET transistor in a SOT-23 surface-mount package. This compact 3-pin package is widely used for low-power applications, offering efficient thermal performance and space-saving design. It is suitable for automated PCB assembly.
