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MRF151G
+BOMRF MOSFET 50V 375-04
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Nhà sản xuấtGiải pháp công nghệ MACOM
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Ông. Phần #MRF151G
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Bảng dữ liệu MRF151G DataSheet
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Part Status | Active |
| Base Product Number | MRF151 |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) Common Source |
| Frequency | 175MHz |
| Gain | 16dB |
| Voltage - Test | 50 V |
| Current Rating (Amps) | 40A |
| Current - Test | 500 mA |
| Power - Output | 300W |
| Voltage - Rated | 125 V |
| Package | 375-04 |
| Supplier Device Package | 375-04, Style 2 |
| Packaging | Tray |
Tổng quan
Description
Key features:
- Frequency Range: 30–512 MHz
- Output Power: 300W (typical)
- Gain: 14–17 dB
- Efficiency: ~65%
- Package: SOT-502A (flanged)
Applications include RF amplifiers in broadcast, industrial heating, and military systems. It supports Class AB, B, and C operation, making it versatile for linear and switching modes.
The MRF151G is known for its ruggedness, thermal stability, and high reliability, making it suitable for demanding RF power amplification tasks.
Equivalent
- BLF177 (NXP)
- BLF278 (NXP)
- MRF151 (older variant)
- PTVA151K02EV (Wolfspeed)
- BLF861A (NXP, higher power)
These alternatives may vary in specs, so verify compatibility for your application. Check datasheets for exact replacements.
Features
- Frequency Range: 30–512 MHz
- Output Power: 150W (typical at 175 MHz, 28V)
- Gain: 16 dB (typical)
- Efficiency: 65% (typical)
- Voltage Rating: 50V
- Package: SOT-502A (flanged)
- Matching: Internally matched for 50Ω input/output
- Applications: VHF/UHF amplifiers, broadcast, industrial RF
It offers high ruggedness, excellent thermal stability, and is optimized for linear and Class AB operation.
Pinout
- Pin Count: 4 pins (Gate, Drain, Source, and Case/Flange).
- Functions:
- Gate (G): Input for RF signal and biasing.
- Drain (D): Output for amplified RF signal.
- Source (S): Ground reference.
- Case/Flange: Electrically connected to the source for heat dissipation.
Key specs:
- Frequency range: Up to 500 MHz.
- Power output: 150W (typical) at 175 MHz, 28V.
- Voltage rating: 65V.
Commonly used in RF amplifiers, broadcast transmitters, and industrial applications. Requires proper heat sinking due to high power dissipation.
Application
1. RF Amplifiers – For HF to VHF bands (1.8–175 MHz).
2. Industrial Heating – Induction heating and plasma generation.
3. Broadcast Transmitters – AM/FM radio and shortwave broadcasting.
4. Military & Aerospace – Radar and communication systems.
5. Medical Equipment – RF energy applications like diathermy.
Its high power (up to 300W) and rugged design make it suitable for demanding RF applications.
Package
Frequently Asked Questions
Q: What is the typical application for the MRF151G RF transistor?
A: It is designed for high-frequency, high-power applications like 175MHz industrial, scientific, and medical (ISM) band amplifiers.
Q: Does this component integrate two transistors on a single substrate?
A: Yes, it features a dual N-Channel configuration with a common source, simplifying push-pull amplifier design.
Q: What is the maximum continuous drain current rating?
A: The maximum current rating is 40 Amps, as specified for continuous operation under rated conditions.
Q: What output power can I expect at 175 MHz with a 50V supply?
A: It delivers 300 Watts of output power when tested at 175 MHz, 50V, and 500 mA bias current.
Q: What is the typical power gain of the MRF151G?
A: The typical gain is 16 dB at 175 MHz, as tested per the datasheet conditions.
Q: What is the maximum drain-to-source voltage rating?
A: The maximum rated voltage between drain and source is 125 Volts.
Q: Which package type is used for the MRF151G?
A: It uses a 375-04 industry-standard package (Style 2), suitable for high-power RF applications.
