MT29F2G08ABAEAH4:E

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MT29F2G08ABAEAH4:E

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IC FLASH 2GBIT PARALLEL 63VFBGA

  • Nhà sản xuấtMicron Technology Inc.

  • Ông. Phần #MT29F2G08ABAEAH4:E

  • Có sẵn2518

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Thông số kỹ thuật

thuộc tính Giá trị
Part Status Last Time Buy
Base Product Number MT29F2G08
DigiKey Programmable Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 2Gbit
Memory Organization 256M x 8
Memory Interface Parallel
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature 0°C ~ 70°C (TA)
Mounting Type Surface Mount
Package 63-VFBGA
Supplier Device Package 63-VFBGA (9x11)
Packaging Bulk

Tổng quan

Description

The MT29F2G08ABAEAH4:E is a NAND Flash memory device manufactured by Micron Technology. It is part of the MT29 family, which is designed for non-volatile data storage. This specific model provides 2 gigabits (256 megabytes) of storage capacity, organized in a memory architecture that includes blocks, pages, and subpages. The device is built using multi-level cell (MLC) technology, which allows for the storage of multiple bits per cell, improving storage capacity without significantly increasing the physical size.
The MT29F2G08ABAEAH4:E features a standard NAND interface, making it compatible with a wide range of controllers and systems that utilize NAND Flash for data storage. It supports essential operations such as read, program, and erase, and includes mechanisms for error correction and wear leveling to enhance data integrity and endurance.
This NAND Flash memory is typically used in applications requiring reliable and cost-effective data storage solutions, such as consumer electronics, mobile devices, and embedded systems. Its compact form factor and efficient storage capabilities make it suitable for various space-constrained applications.

Equivalent

Equivalent products to the MT29F2G08ABAEAH4:E NAND Flash chip include similar 2Gb (256MB) SLC NAND Flash chips from other manufacturers. Consider Toshiba's TH58NVG2S3HTA20, Samsung's K9F2G08U0D, and Hynix's H27U2G8F2CTR. These chips generally share similar specifications like storage capacity, interface, and package type but may differ slightly in performance characteristics. Always verify compatibility with the specific requirements of your device.

Features

The MT29F2G08ABAEAH4:E is a NAND Flash memory chip from Micron Technology. Key features of this chip include:
1. Capacity: It offers a storage capacity of 2 gigabits.
2. Architecture: The NAND architecture provides a cost-effective storage solution with high-density capabilities.
3. Interface: It uses an 8-bit interface for data input and output.
4. Performance: This chip is designed for fast read and write operations, making it suitable for a variety of applications.
5. Voltage: Operates at a voltage range that typically spans between 2.7V to 3.6V.
6. Package: Comes in a TSOP (Thin Small Outline Package), which is compact and suitable for space-constrained applications.
7. Endurance and Retention: Provides robust data retention and endurance cycles, typical of NAND Flash technology.
8. Applications: It's used in consumer electronics, industrial applications, and other devices requiring reliable non-volatile memory storage.
This NAND Flash chip is ideal for use in embedded systems, mobile devices, and other applications where reliable, non-volatile storage is crucial.

Pinout

The MT29F2G08ABAEAH4:E is a NAND Flash memory device from Micron. It typically comes in a 48-pin TSOP (Thin Small Outline Package). The primary function of this device is non-volatile storage, meaning it can retain data even when power is removed. It’s used in a variety of applications, including embedded systems, consumer electronics, and industrial applications.
Key functions and pin descriptions include:
- Data Input/Output (I/O0-I/O7): Used for data input and output operations.
- CLE (Command Latch Enable): Enables command input when active.
- ALE (Address Latch Enable): Enables address input when active.
- CE# (Chip Enable): Enables the chip when active, allowing access to the device.
- WE# (Write Enable): Controls data write operations.
- RE# (Read Enable): Controls data read operations.
- WP# (Write Protect): Protects data from being written.
- R/B# (Ready/Busy): Indicates the status of the device operations.
- VCC and VSS: Power and ground pins.
This concise description covers the essential aspects of the pin count and function for the MT29F2G08ABAEAH4:E NAND Flash memory.

Manufacturer

The MT29F2G08ABAEAH4:E is manufactured by Micron Technology, Inc. Micron is a leading American semiconductor company that specializes in the production of memory and storage solutions. The company produces a variety of products, including DRAM, NAND flash memory, and SSDs, which are used in a wide range of electronic devices and applications. Micron is known for its innovation in memory technologies and plays a significant role in the data storage and memory industry globally.

Application

The MT29F2G08ABAEAH4:E is a NAND Flash memory chip commonly used in various applications requiring non-volatile storage. Key application areas include:
1. Embedded Systems: Used in microcontrollers and processors for firmware storage.
2. Consumer Electronics: Found in devices like digital cameras, MP3 players, and GPS units for data storage.
3. Mobile Devices: Utilized in smartphones and tablets for storing apps and multimedia.
4. Computing: Employed in SSDs (Solid State Drives) for high-speed data access.
5. Networking Equipment: Used for configuration and log storage in routers and switches.
6. Industrial Applications: Provides reliable storage in harsh environments for control systems and monitoring devices.

Package

The MT29F2G08ABAEAH4:E is a NAND Flash memory chip from Micron Technology. Its package type is a 48-pin TSOP I (Thin Small Outline Package), which is commonly used for memory devices due to its compact and efficient design.

Frequently Asked Questions


Q: What is the memory size and organization of the MT29F2G08ABAEAH4?
A: It is a 2Gbit NAND Flash memory organized as 256M x 8 bits, suitable for data storage.


Q: Is this component compatible with parallel interface microcontrollers?
A: Yes, it features a parallel memory interface, making it ideal for legacy or high-speed parallel systems.


Q: What is the operating voltage range for this device?
A: The supply voltage ranges from 2.7V to 3.6V, supporting standard 3.3V logic systems.


Q: What is the temperature range for reliable operation?
A: It operates within a commercial temperature range of 0°C to 70°C (TA).


Q: Which package type does the MT29F2G08ABAEAH4 use?
A: It comes in a 63-VFBGA surface-mount package, specifically 63-VFBGA (9x11 mm).


Q: Is this NAND Flash memory suitable for new designs?
A: No, its lifecycle status is "Last Time Buy," so it is intended for existing designs requiring final orders.


Q: Can this part be used in industrial or automotive applications?
A: No, it is rated for commercial use (0°C to 70°C), not extended industrial or automotive ranges.


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