MT29F2G08ABAEAWP:E

Hình ảnh chỉ để tham khảo

MT29F2G08ABAEAWP:E

+BOM

IC FLASH 2GBIT PARALLEL 48TSOP I

  • Nhà sản xuấtMicron Technology Inc.

  • Ông. Phần #MT29F2G08ABAEAWP:E

  • Có sẵn6037

365 Đảm bảo chất lượng ngày

7*24 giờ dịch vụ quarantee

90-Bảo hành sau bán hàng ngày

Bảo hành sản phẩm chính xác

Thông số kỹ thuật

thuộc tính Giá trị
Part Status Last Time Buy
Base Product Number MT29F2G08
DigiKey Programmable Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 2Gbit
Memory Organization 256M x 8
Memory Interface Parallel
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature 0°C ~ 70°C (TA)
Mounting Type Surface Mount
Package 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package 48-TSOP I
Packaging Tray

Tổng quan

Description

The MT29F2G08ABAEAWP:E is a NAND Flash memory chip manufactured by Micron Technology. It is part of the MT29F series, known for providing reliable non-volatile storage solutions. This specific model offers a capacity of 2 gigabits (256 megabytes) and utilizes a single-level cell (SLC) architecture, which enhances data integrity and performance, making it suitable for applications demanding high reliability.
The chip operates with a 3.3V power supply and features an 8-bit I/O interface, facilitating efficient data transfer. It supports common NAND Flash operations such as program, erase, and read cycles, and features advanced error correction capabilities to ensure data accuracy. Its compact design is ideal for embedded systems and consumer electronics where space is a premium.
The MT29F2G08ABAEAWP:E is typically used in devices requiring robust storage solutions, such as industrial equipment, automotive systems, and various consumer electronic products. Its high endurance and reliability make it a popular choice for applications that require frequent data writing and erasing.

Equivalent

The MT29F2G08ABAEAWP:E is a 2Gb NAND Flash memory chip produced by Micron. Equivalent products from other manufacturers include:
1. Samsung: K9F2G08U0C
2. Toshiba/Kioxia: TC58NVG2S3ETA00
3. SK Hynix: H27U2G8F2BTR-BC
4. Winbond: W29N02GVSIAA
These chips offer similar NAND Flash capabilities and are commonly used in storage applications. Always check datasheets for specific compatibility requirements.

Features

The MT29F2G08ABAEAWP:E is a NAND Flash memory chip from Micron Technology. Key features include:
1. Capacity: 2 Gb (Gigabit) storage capacity.
2. Interface: SLC (Single-Level Cell) NAND, which is faster and more durable than multi-level cell variants.
3. Page Size: 4,296 bytes (4,096 + 200 bytes for spare area).
4. Block Size: Composed of 64 pages, which amounts to 256 KB per block.
5. Voltage: Operates at 3.3V for both core and I/O.
6. Performance: Fast read and write operations, suitable for high-speed applications.
7. Endurance: Higher endurance due to SLC architecture, supporting more program/erase cycles compared to MLC NAND.
8. Operating Temperature: Range from -40°C to +85°C, suitable for industrial applications.
9. Package: Available in a TSOP (Thin Small Outline Package) for compact applications.
10. Data Retention: Reliable data retention capabilities.
These features make it suitable for various applications, including consumer electronics, industrial, and automotive systems, where reliability and speed are critical.

Pinout

The MT29F2G08ABAEAWP:E is a NAND Flash memory chip from Micron Technology. It has a total of 48 pins. This chip is used for storing data with a capacity of 2 gigabits (256 megabytes). It operates with a voltage range typically between 2.7V to 3.6V.
The primary functions of these pins include:
- I/O pins (I/O0-I/O7): Used for data input and output.
- CLE (Command Latch Enable): Activates command input.
- ALE (Address Latch Enable): Activates address input.
- CE# (Chip Enable): Enables the chip for operation.
- WE# (Write Enable): Controls data write into the chip.
- RE# (Read Enable): Controls data read from the chip.
- WP# (Write Protect): Protects the memory from being modified.
- R/B# (Ready/Busy): Indicates the chip's status.
- VCC: Power supply pin.
- VSS: Ground pin.
These pins function together to manage data storage and retrieval processes within the NAND Flash memory.

Manufacturer

The MT29F2G08ABAEAWP:E is manufactured by Micron Technology, Inc. Micron is an American company that specializes in the production of semiconductor devices, primarily focused on memory and storage solutions. Founded in 1978 and headquartered in Boise, Idaho, Micron is one of the leading companies in the memory industry, producing a wide range of products such as DRAM, NAND flash memory, and solid-state drives (SSDs). The company serves various markets, including computing, mobile, automotive, industrial, and consumer electronics. Micron's innovations in memory technology have played a significant role in advancing the performance and efficiency of electronic devices globally.

Application

The MT29F2G08ABAEAWP:E is a NAND Flash memory chip commonly used in various electronic applications. Its primary application areas include:
1. Consumer Electronics: Used in devices such as smartphones, tablets, and digital cameras for data storage.
2. Computing: Utilized in solid-state drives (SSDs) and other storage devices in laptops and desktops.
3. Embedded Systems: Serves as storage in embedded applications for automotive, industrial, and IoT devices.
4. Networking: Employed in routers and switches for configuration and data storage.
5. Gaming: Used in gaming consoles for storage of games and user data.
Its high storage capacity and reliability make it suitable for data-intensive applications.

Package

The MT29F2G08ABAEAWP:E is a NAND Flash memory chip from Micron. It comes in a 48-pin TSOP (Thin Small Outline Package) type 1 configuration. This package is designed for high-density, non-volatile storage applications.

Frequently Asked Questions


Q: What is the memory capacity and organization of the MT29F2G08ABAEAWP:E?
A: It is a 2Gbit NAND Flash memory organized as 256M x 8 bits, providing 256MB of non-volatile storage.


Q: What is the supply voltage range for this device?
A: The operating voltage range is 2.7V to 3.6V, suitable for standard 3.3V system designs.


Q: Is this NAND Flash compatible with a parallel interface?
A: Yes, it uses a parallel memory interface, ideal for direct connection to legacy or high-throughput controllers.


Q: What is the operating temperature range of this component?
A: It operates from 0°C to 70°C (TA), making it suitable for commercial-grade applications.


Q: What package options are available for this part?
A: It comes in a 48-TFSOP (0.724", 18.40mm Width) package with a supplier device package of 48-TSOP I, surface mount.


Q: Is this part currently in production or nearing end-of-life?
A: Its Part Status is "Last Time Buy," indicating it is near end-of-life; plan for last-time purchases accordingly.


Q: Can this memory be used for code storage or data logging in embedded systems?
A: Yes, as a NAND Flash, it is ideal for high-density data storage in embedded systems, but not for direct code execution (XIP).


Sản phẩm liên quan đến MT29F2G08ABAEAWP:E

  • Trích dẫn nhanh chóng

  • Gửi yêu cầu báo giá của bạn cho MT29F2G08ABAEAWP:E sử dụng biểu mẫu này.chúng tôi sẽ trả lời trong vòng 12 giờ.