MT29F4G08ABAEAH4:E

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MT29F4G08ABAEAH4:E

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IC FLASH 4GBIT PARALLEL 63VFBGA

  • Nhà sản xuấtMicron Technology Inc.

  • Ông. Phần #MT29F4G08ABAEAH4:E

  • Có sẵn7695

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Thông số kỹ thuật

thuộc tính Giá trị
Part Status Obsolete
Base Product Number MT29F4G08
DigiKey Programmable Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 4Gbit
Memory Organization 512M x 8
Memory Interface Parallel
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature 0°C ~ 70°C (TA)
Mounting Type Surface Mount
Package 63-VFBGA
Supplier Device Package 63-VFBGA (9x11)
Packaging Bulk

Tổng quan

Description

The MT29F4G08ABAEAH4:E is a NAND flash memory device from Micron Technology, designed for high-density storage applications. It features a capacity of 4 gigabits (or 512 megabytes) and utilizes a 3D NAND architecture for improved performance and reliability compared to traditional 2D NAND. The device supports multiple I/O interfaces, allowing for high-speed data transfer rates, making it suitable for smartphones, tablets, and embedded systems. It also incorporates advanced error correction codes (ECC) and wear leveling algorithms to enhance data integrity and longevity. The package type is typically a small, compact form factor, facilitating easy integration into various electronic devices. The part number indicates its specific features, including its organization, interface type, and memory technology. Overall, the MT29F4G08ABAEAH4:E is a robust solution for applications requiring efficient data storage and retrieval.

Equivalent

The MT29F4G08ABAEAH4:E chip is a NAND flash memory device, and its equivalent products include the Micron MT29F4G08ABAEAWP, Samsung K9GAG08U0M, and Hynix H26M31001G3. Always check specifications like density, package type, and voltage to ensure compatibility when selecting equivalents.

Features

The MT29F4G08ABAEAH4:E is a 4Gb (gigabit) NAND flash memory chip from Micron Technology, designed for various applications such as smartphones, tablets, and embedded systems. Key features include:
1. Architecture: It utilizes 3D NAND technology, enhancing density and performance.
2. Interface: Supports ONFI (Open NAND Flash Interface) 4.0, allowing for high-speed data transfer.
3. Voltage: Operates at a voltage range of 2.7V to 3.6V, suitable for low-power applications.
4. Page Size: Offers a page size of 16KB, with a block size of 128KB.
5. Endurance: Designed for high endurance, supporting numerous program/erase cycles.
6. Data Integrity: Features advanced error correction and wear leveling to maintain data integrity.
7. Temperature Range: Rated for industrial temperature ranges, ensuring reliability in various environments.
This combination of features makes the MT29F4G08ABAEAH4:E ideal for demanding applications requiring efficient data storage and fast access speeds.

Pinout

The MT29F4G08ABAEAH4:E is a NAND Flash memory chip from Micron Technology. It features a pin count of 48 pins.
The primary functions of the pins include:
- Data I/O: Multiple pins are used for data input/output.
- Control Signals: Pins for command and control signals, such as Chip Enable (CE), Write Enable (WE), Read Enable (RE), and Clear (CLE).
- Address Lines: Pins for addressing the memory locations.
- Power Supply: VCC and VSS pins for power and ground connections.
- Other Signals: Some pins may be used for additional functions such as Ready/Busy (R/B) and Write Protect (WP).
This NAND Flash is typically used in embedded applications and provides significant storage capacity along with high-speed data transfer rates.

Manufacturer

The manufacturer of the MT29F4G08ABAEAH4:E is Micron Technology, Inc. Micron is a leading American producer of semiconductor devices, particularly known for its memory and storage solutions, including DRAM, NAND flash memory, and SSDs. Founded in 1978 and headquartered in Boise, Idaho, Micron operates globally and serves various markets, including computing, consumer electronics, automotive, and industrial applications. The company is recognized for its innovation in memory technology and plays a significant role in the development of high-performance memory products that support advancements in computing and data storage.

Application

The MT29F4G08ABAEAH4:E is a NAND flash memory chip primarily used in consumer electronics, such as smartphones, tablets, and SSDs. Its applications extend to automotive systems, industrial devices, and embedded systems, where reliable, high-density storage is essential. This chip supports data storage for applications, multimedia files, and operating systems, enabling fast read/write cycles and efficient data management. Additionally, it is suitable for use in IoT devices and other high-performance computing applications requiring non-volatile memory.

Package

The MT29F4G08ABAEAH4:E is a NAND flash memory device featuring a TSOP (Thin Small Outline Package) type form factor. This package typically allows for high-density mounting on circuit boards and is designed for efficient thermal and electrical performance.

Frequently Asked Questions


Q: What is the storage capacity and organization of this NAND Flash?
A: It has 4Gbit capacity organized as 512M x 8 bits, suitable for high-density parallel interface designs.


Q: Is this component suitable for industrial temperature ranges?
A: No, its operating temperature is 0°C to 70°C, making it only suitable for commercial applications.


Q: What voltage levels does this memory support?
A: It supports a wide supply voltage range of 2.7V to 3.6V, ensuring compatibility with typical 3.3V systems.


Q: What is the memory interface type of this device?
A: It uses a Parallel memory interface, requiring standard address/data bus lines for operation.


Q: Can this part be used in new designs?
A: No, its lifecycle status is marked 'Obsolete', so it is recommended only for legacy system maintenance or repairs.


Q: What is the physical package of the MT29F4G08ABAEAH4:E?
A: It comes in a 63-VFBGA package with dimensions of 9x11mm, designed for surface mount assembly.


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