Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package / Case | Tray |
| Part Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR4 |
| Memory Size | 4Gb (256M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 1.6 GHz |
| Voltage - Supply | 1.14V ~ 1.26V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
Tổng quan
Description
MT40A256M16GE-062E:B is a Micron DRAM device (DDR3/DDR3L SDRAM). It is organized as 256M x 16, giving 4 Gb (512 MB) per chip. It uses a DDR3/DDR3L interface with low-voltage operation (roughly 1.35–1.5 V) and features multiple banks (typically 8) with standard DRAM operations (row/column addressing, automatic refresh, read/write commands). The suffix -062E denotes a specific speed grade and timing/temperature/packaging set, while -B indicates RoHS-compliant packaging. This part is intended for use on memory modules or memory arrays as a discrete DRAM die. For exact timing, voltage, and packaging specifications, consult Micron’s datasheet for MT40A256M16GE-062E:B.
Equivalent
MT40A256M16GE-062E:B is Micron’s 256-Mbit ×16 DDR3/L SDRAM (4 Gbit total), typically 1.35–1.5 V, speed grade -062. Equivalent parts are other vendors’ 4-Gbit DDR3/L devices with x16 data width and the same voltage/timing. Examples to check via cross-ref: Samsung and SK Hynix 256Mbit×16 DDR3/L parts. Use Micron cross-reference tables or distributor BOM tools to confirm exact matches (packaging, timing, and voltage must align).
Pinout
- Pin count: 96-ball FBGA (96 pins)
- Function: DDR3L SDRAM memory device, 256M × 16 organization (512 Mbit total). Provides a 16-bit data bus with standard DDR3 address/command inputs (A[0:13], BA[0:2], /RAS, /CAS, /WE, /CS, CK/CK#, CKE, ODT, etc.), DQ/DQS signals, and DM. Operates at low DDR3L voltage.
- Function: DDR3L SDRAM memory device, 256M × 16 organization (512 Mbit total). Provides a 16-bit data bus with standard DDR3 address/command inputs (A[0:13], BA[0:2], /RAS, /CAS, /WE, /CS, CK/CK#, CKE, ODT, etc.), DQ/DQS signals, and DM. Operates at low DDR3L voltage.
Manufacturer
- Manufacturer: Micron Technology, Inc.
- What kind of company: An American multinational semiconductor company that designs and manufactures memory and storage technologies, including DRAM, NAND/NOR flash, and SSDs; one of the world’s leading memory producers.
- What kind of company: An American multinational semiconductor company that designs and manufactures memory and storage technologies, including DRAM, NAND/NOR flash, and SSDs; one of the world’s leading memory producers.
Application
MT40A256M16GE-062E:B is a Micron SDRAM device used as system memory. Typical applications include:
- Notebooks and desktops (DIMM/SO-DIMM)
- Servers and workstation memory
- Embedded and industrial equipment requiring high-speed RAM
- Networking/telecom gear (routers, switches)
- Consumer electronics with memory needs (set-top boxes, digital TVs, multimedia devices)
- Notebooks and desktops (DIMM/SO-DIMM)
- Servers and workstation memory
- Embedded and industrial equipment requiring high-speed RAM
- Networking/telecom gear (routers, switches)
- Consumer electronics with memory needs (set-top boxes, digital TVs, multimedia devices)
Package
MT40A256M16GE-062E:B uses a 96‑ball FBGA package (8×12 mm, 0.8 mm pitch).
