MT41K1G4RH-125:E

MT41K1G4RH-125:E is a Micron DRAM device from the MT41K1G4RH family. It is a high-density, scalar DRAM chip used as a building block in memory subsystems. Key points:
- Density/organization: 1 Gigabit per device, typically with x4 data width and multiple banks (commonly 8 banks).
- Interface: Synchronous SDRAM with a DDR-like interface for high-speed data transfer.
- Applications: Used in memory sub-systems for modules, embedded devices, and stackable memory solutions.
- Variants: The -125:E suffix indicates a specific speed grade and an extended/industrial temperature variant (-E); exact voltage and timing depend on the grade.
- Features: Common DRAM features such as burst operations, row/column addressing, and standard DRAM timing circuits; designed for reliable operation in its target temperature range.
For exact numbers (capacity per device, speed (MT/s), latency (CL), voltage, and package options), consult the Micron MT41K1G4RH-125:E datasheet.

MT41K1G4RH-125:E is a Micron DDR3L SDRAM, 1Gb x4. Exact cross-references depend on speed/voltage/temperature. Please provide:
- speed (e.g., DDR3-1066/1333/1600)
- voltage (1.35V or 1.5V) and
- temperature grade (industrial/extended).
With those, I can give precise equivalent part numbers from Samsung, Hynix, Winbond, Nanya, etc.

MT41K1G4RH-125:E is a Micron DDR3L SDRAM device. Key features:
- DDR3L SDRAM, low-voltage operation (VDD/VDDQ = 1.35V; VPP = 2.5V)
- Organization: 1Gbit density with x4 data width (1G x 4)
- Banks: 8 banks; Burst Length 8 (BL8)
- Data interface: DQ/DQS with fly-by topology; supports standard DDR3 timing
- On-die termination and impedance matching; ZQ calibration
- Supports typical DDR3L timing options; speed grade around DDR3-1333/1600 MT/s (specific speed depends on device variant)
- Packaging: standard Micron FBGA/LGA package (as per part family)
- Temperature grade: availability of extended/industrial temperature variants under the -E suffix
Note: exact timing, density, and temp range are specified in the datasheet for the specific lot; verify the datasheet for precise CL/tRCD/tRP values and operating range.

- Pin count: 60-ball BGA (60 pins)
- Function: Micron MT41K1G4RH-125:E is a mobile DDR3L SDRAM device (1 Gbit density, x4 organization) operated at low voltage (1.35 V). Speed grade 125 corresponds to the 125 MT/s class.

- Manufacturer: Micron Technology, Inc.
- What kind of company: An American multinational semiconductor company and one of the world’s leading memory and storage manufacturers, producing DRAM, NAND flash, SSDs, and other memory technologies.

MT41K1G4RH-125:E is a high-density DDR4 SDRAM component. Typical application areas include:
- Servers and data-center memory (RDIMM/LRDIMM configurations)
- Enterprise and high-end workstation systems
- Desktop PCs requiring large memory capacity
- Embedded and industrial applications needing reliable, high-bandwidth DRAM
- Storage controllers and networking gear with memory requirements
Note: It is used as main system memory in DRAM-based platforms and supports memory-intensive applications across these domains.

96-ball Fine-pitch FBGA (FBGA) package.