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MT47H16M16BG-5E:B
+BOMIC DRAM 256MBIT PARALLEL 84FBGA
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Nhà sản xuấtMicron Technology Inc.
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Ông. Phần #MT47H16M16BG-5E:B
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Có sẵn8705
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Part Status | Obsolete |
| Base Product Number | MT47H16M16 |
| Digi Key Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR2 |
| Memory Size | 256Mbit |
| Memory Organization | 16M x 16 |
| Memory Interface | Parallel |
| Clock Frequency | 200 MHz |
| Write Cycle Time - Word, Page | 15ns |
| Voltage - Supply | 1.7V ~ 1.9V |
| Operating Temperature | 0°C ~ 85°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 84-FBGA |
| Supplier Device Package | 84-FBGA (8x14) |
| Packaging | Tray |
| Access Time | 600 ps |
Tổng quan
Description
The -5E designation indicates a specific speed/temperature grade, and the B suffix denotes RoHS-compliant, lead-free packaging. As a DDR3 part, it follows the standard DDR3 interface (high-speed, multi-bank memory with a 16-bit data bus). Exact electrical parameters (voltage, timings, number of banks, etc.) are defined in the MT47H16M16BG-5E:B datasheet and vary with operating conditions.
Bottom line: a 256‑Mbit DDR3 memory die (16M × 16) from Micron, in a BG package, used as part of larger memory solutions; see the datasheet for full specifications.
Features
- Type/Density: DDR3L SDRAM, 256 Mb total
- Organization: 16M x 16 (16-bit wide I/O)
- Voltage: DDR3L operation at 1.35 V (VDD/VDDQ)
- Speed grade: -5E (high-speed operation)
- Banks: 8 banks
- Burst: Burst length 8 (BL8), synchronous access
- Refresh: Auto/Self-refresh support
- Packaging: FBGA/BGA package, lead-free (BG suffix)
- Typical uses: mobile/low-power memory in consumer electronics and portable devices
Note: exact CL (latency) options and maximum data rate depend on speed grade and device revision. For precise timings, refer to the Micron datasheet.
Pinout
- Function: Micron MT47H16M16BG-5E:B is a DDR2 SDRAM device, 256-Mbit total density with a 16-bit wide data bus (16 DQ lines). It provides address/command inputs (A0–A12, BA0–BA2), control signals (CS, RAS, CAS, WE), clock inputs (CK/CK#), data strobe (DQS) and data outputs (DQ), plus ODT and RESET as used in DDR2 memory devices.
Manufacturer
- Company type: A U.S.-based multinational semiconductor company that designs, manufactures, and sells memory and storage products (DRAM, NAND flash, SSDs, etc.).
Application
- Mobile and handheld devices (phones, PDAs, portable media players)
- Notebook/ultra‑thin laptops as main system memory
- Consumer electronics (digital cameras/camcorders, set‑top boxes, TVs, media players)
- Networking/telecommunications equipment (routers, switches, base stations)
- Embedded/industrial and automotive systems (infotainment, controllers, medical devices) requiring compact DRAM
Package
Frequently Asked Questions
Q: What is the memory capacity and organization of the MT47H16M16BG-5E:B?
A: It offers 256Mbit density organized as 16M words x 16 bits, making it suitable for 16-bit wide data bus applications.
Q: What is the maximum operating clock frequency for this DDR2 SDRAM?
A: The device supports a maximum clock frequency of 200 MHz, corresponding to DDR2-400 data rate performance.
Q: What is the voltage supply range required for operation?
A: It requires a nominal 1.8V supply, with an operating range of 1.7V to 1.9V, compliant with standard DDR2 specifications.
Q: Can this component operate in extended temperature environments?
A: Yes, it has an operating temperature range of 0°C to 85°C (TC), suitable for commercial and industrial applications within this range.
Q: Does it use parallel interface and what is the access time?
A: Yes, it uses a standard parallel memory interface with a 600 ps access time for efficient data read operations.
Q: How is the part packaged and mounted?
A: It comes in an 84-FBGA (8x14mm) package and is designed for surface mount assembly (SMT).
