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MT48LC8M16A2P-6A:L
+BOMIC DRAM 128MBIT PAR 54TSOP II
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Nhà sản xuấtMicron Technology Inc.
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Ông. Phần #MT48LC8M16A2P-6A:L
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Có sẵn3980
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Part Status | Last Time Buy |
| Base Product Number | MT48LC8M16A2 |
| DigiKey Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM |
| Memory Size | 128Mbit |
| Memory Organization | 8M x 16 |
| Memory Interface | Parallel |
| Clock Frequency | 167 MHz |
| Write Cycle Time - Word, Page | 12ns |
| Voltage - Supply | 3V ~ 3.6V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package | 54-TSOP (0.400", 10.16mm Width) |
| Supplier Device Package | 54-TSOP II |
| Packaging | Bulk |
| Access Time | 5.4 ns |
Tổng quan
Description
The "-6A" in the part number indicates a speed grade with a maximum clock frequency of 166 MHz, and the "L" suffix denotes a lead-free package, which complies with RoHS standards for environmental safety. The SDRAM supports burst lengths of 1, 2, 4, 8, and full-page, with a CAS latency of 2 or 3, facilitating flexible configuration suited to various application needs. It is commonly used in systems requiring fast data processing and storage, such as computers, networking devices, and consumer electronics.
Equivalent
1. Hynix HY57V641620HG - 128Mb SDRAM.
2. Samsung K4S641632H - 128Mb SDRAM.
3. ISSI IS42S16160 - 128Mb SDRAM.
These chips have similar specifications and can often be used as substitutes, but always verify compatibility with your specific application.
Features
1. Speed and Performance: It operates at a clock frequency of 166 MHz and has a data rate of 166 MT/s, with a CAS latency of 2 or 3.
2. Voltage and Power: The device operates at a voltage range of 3.3V ±0.3V.
3. Organization: It features a four-bank architecture with a 16-bit interface.
4. Burst Lengths: Supports burst lengths of 1, 2, 4, 8, or full page with burst termination options.
5. Auto-Refresh: Includes auto-refresh and self-refresh modes for maintaining data integrity.
6. Packaging: Available in a 54-pin TSOP II package.
7. Temperature Range: Designed to operate in a standard temperature range.
These features make it suitable for a variety of applications requiring reliable and fast memory access, such as computing, networking, and industrial applications.
Pinout
- Data Pins (DQ0-DQ15): These 16 pins are used for data input and output.
- Address Pins (A0-A12): These pins are used to select specific memory addresses.
- Control Pins: Include /CAS (Column Address Strobe), /RAS (Row Address Strobe), /WE (Write Enable), /CS (Chip Select) for various control functions.
- Clock Pins (CLK): Receive the clock signal to synchronize read/write operations.
- Other Pins: Include power (VDD, VSS), data mask (DQM), and N.C. (No Connect) for unused pins.
The chip operates at a clock frequency of 166 MHz with a voltage supply of 3.3V, suitable for various memory-intensive applications.
Manufacturer
Application
Package
Frequently Asked Questions
Q: Is this SDRAM compatible with 3.3V logic systems?
A: Yes, it supports a supply voltage range of 3V to 3.6V, making it ideal for standard 3.3V DDR/SDRAM interfaces.
Q: What is the maximum clock frequency for this DRAM?
A: The clock frequency is rated at 167 MHz, suitable for high-speed synchronous operations in embedded systems.
Q: What is the memory organization and total density?
A: It is organized as 8M x 16 bits, providing a total memory size of 128 Mbit (16 MB).
Q: What package type does this part use?
A: It comes in a 54-pin TSOP II package (10.16mm width), designed for surface mount assembly.
Q: What is the access time specification?
A: The access time is 5.4 ns, ensuring fast data retrieval at the rated clock speed.
Q: Is this component in active production?
A: No, its part status is "Last Time Buy," so it is recommended for end-of-life designs or immediate procurement.
Q: What is the operating temperature range?
A: It operates from 0°C to 70°C (TA), suitable for commercial-grade applications.
Q: Does this DRAM support page write cycles?
A: Yes, the write cycle time for word/page is 12ns, supporting efficient page mode operations.