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MT48LC8M8A2P-6A:J
+BOMIC DRAM 64MBIT PAR 54TSOP II
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Nhà sản xuấtMicron Technology Inc.
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Ông. Phần #MT48LC8M8A2P-6A:J
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Có sẵn4280
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Part Status | Obsolete |
| Digi Key Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM |
| Memory Size | 64Mbit |
| Memory Organization | 8M x 8 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 12ns |
| Voltage - Supply | 3V ~ 3.6V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 54-TSOP (0.400", 10.16mm Width) |
| Supplier Device Package | 54-TSOP II |
| Base Product Number | MT48LC8M8A2 |
| Clock Frequency | 167 MHz |
| Access Time | 5.4 ns |
Tổng quan
Description
The architecture supports x8 data organization, which is ideal for high-performance computing tasks, including graphics, networking, and embedded systems. It is compatible with various industry standards and offers features like on-die termination (ODT) and an improved signal integrity for reliable performance.
Additionally, the chip is provided in a compact 78-ball TFBGA package, suitable for space-constrained environments. The MT48LC8M8A2P-6A:J is particularly useful in applications requiring fast data processing and storage, including consumer electronics, telecommunications, and industrial devices.
Equivalent
1. Samsung K4S641632D - 8Mb SDRAM
2. Hynix HY57V281620 - 8Mb DRAM
3. Nanya NT5DS16M8 - 8Mb SDRAM
Always verify specifications such as pin configuration, voltage, and timing parameters for compatibility in your application.
Features
- Type: DDR3 SDRAM, synchronous dynamic RAM.
- Organization: 8 megabytes x 8 bits (8M x 8).
- Speed: Operates with a clock frequency of 6 ns.
- Memory density: 64 megabits.
- Voltage: Typically operates at 1.5V.
- Packaging: Available in a 54-ball FBGA (Fine Ball Grid Array) package.
- Access time: Offers low latency for faster data retrieval.
- Data Rate: Supports high data rates suitable for various applications.
- Temperature Range: Standard commercial grade.
This DRAM is used in a variety of applications, including consumer electronics, networking, and computing systems, providing efficient performance and reliability.
Pinout
The functions of the pins include:
- Data (DQ0-DQ7): 8 data input/output lines.
- Address (A0-A11): 12 address lines used to access memory locations.
- Control (WE, CAS, RAS): Write Enable (WE), Column Address Strobe (CAS), and Row Address Strobe (RAS) for controlling read and write operations.
- Chip Select (CS): Activates the memory chip.
- VDD/VSS: Power supply and ground pins.
- BA0, BA1: Bank Address pins for selecting memory banks.
- CLK: Clock pin for synchronization in synchronous applications.
This DRAM is typically used in various applications requiring memory storage, including computer systems and embedded devices.
Manufacturer
Application
1. Consumer Electronics: Televisions, gaming consoles, and set-top boxes.
2. Computing Devices: Laptops, desktops, and servers for main memory.
3. Networking Equipment: Routers and switches requiring high-speed data processing.
4. Embedded Systems: Industrial machines and automotive applications where reliable memory is essential.
5. Telecommunication: Base stations and communication devices for data handling.
Its high-density and low-power features make it suitable for applications requiring efficient memory solutions.