Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Part Status | Active |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Current - Collector(Ic)(Max) | 100mA |
| Voltage - Collector Emitter Breakdown(Max) | 50V |
| Resistor - Base(R1) | 10kOhms |
| Resistor - Emitter Base(R2) | 10kOhms |
| DC Current Gain(h FE)(Min) @ Ic Vce | 35 @ 5mA, 10V |
| Vce Saturation(Max) @ Ib Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff(Max) | 500nA |
| Power - Max | 250mW |
| Mounting Type | Surface Mount |
Tổng quan
Description
The MUN5211DW1T1G is a NPN bipolar junction transistor (BJT) from ON Semiconductor, designed for general-purpose amplification and switching applications. Key features include:
- Package: SOT-363 (small footprint, suitable for compact designs).
- Voltage Rating: 50V (collector-emitter, VCEO).
- Current Rating: 100mA (continuous collector current).
- Low Saturation Voltage: Enhances efficiency in switching.
- Matched Pair: Contains two NPN transistors with closely matched parameters, ideal for differential amplifiers or mirror circuits.
Common uses include signal amplification, load switching, and analog circuits in consumer electronics, IoT devices, and portable gadgets. Its small size and dual-transistor configuration make it useful for space-constrained PCB designs.
For detailed specs, refer to the datasheet from ON Semiconductor.
- Package: SOT-363 (small footprint, suitable for compact designs).
- Voltage Rating: 50V (collector-emitter, VCEO).
- Current Rating: 100mA (continuous collector current).
- Low Saturation Voltage: Enhances efficiency in switching.
- Matched Pair: Contains two NPN transistors with closely matched parameters, ideal for differential amplifiers or mirror circuits.
Common uses include signal amplification, load switching, and analog circuits in consumer electronics, IoT devices, and portable gadgets. Its small size and dual-transistor configuration make it useful for space-constrained PCB designs.
For detailed specs, refer to the datasheet from ON Semiconductor.
Features
The MUN5211DW1T1G is a dual NPN digital transistor with built-in resistors, designed for general-purpose switching and amplification. Key features:
- Configuration: Dual NPN transistors in a single package (2-in-1).
- Built-in Resistors: Includes base resistors (R1 = R2 = 10 kΩ) for simplified circuit design.
- Voltage Rating: Collector-emitter voltage (VCEO) of 50V.
- Current Handling: Collector current (IC) up to 100mA per transistor.
- Package: SOT-363 (SC-88) surface-mount package for compact PCB layouts.
- Low Power: Suitable for low-power digital/logic applications.
- Applications: Load switching, interface circuits, and inverter/driver stages.
Ideal for space-constrained designs requiring reliable switching with minimal external components.
- Configuration: Dual NPN transistors in a single package (2-in-1).
- Built-in Resistors: Includes base resistors (R1 = R2 = 10 kΩ) for simplified circuit design.
- Voltage Rating: Collector-emitter voltage (VCEO) of 50V.
- Current Handling: Collector current (IC) up to 100mA per transistor.
- Package: SOT-363 (SC-88) surface-mount package for compact PCB layouts.
- Low Power: Suitable for low-power digital/logic applications.
- Applications: Load switching, interface circuits, and inverter/driver stages.
Ideal for space-constrained designs requiring reliable switching with minimal external components.
Pinout
The MUN5211DW1T1G is a SOT-363 (6-pin) dual NPN digital transistor with built-in resistors.
Pin Functions:
1. Base 1 (B1) – Input for the first transistor.
2. Emitter 1 (E1) – Ground/reference for the first transistor.
3. Base 2 (B2) – Input for the second transistor.
4. Emitter 2 (E2) – Ground/reference for the second transistor.
5. Collector 1 (C1) & Collector 2 (C2) – Outputs (internally connected).
It integrates bias resistors, simplifying digital switching applications. Typical uses include inverter/driver circuits and interface logic level shifting.
Pin Functions:
1. Base 1 (B1) – Input for the first transistor.
2. Emitter 1 (E1) – Ground/reference for the first transistor.
3. Base 2 (B2) – Input for the second transistor.
4. Emitter 2 (E2) – Ground/reference for the second transistor.
5. Collector 1 (C1) & Collector 2 (C2) – Outputs (internally connected).
It integrates bias resistors, simplifying digital switching applications. Typical uses include inverter/driver circuits and interface logic level shifting.
Application
The MUN5211DW1T1G is a dual NPN digital transistor with built-in resistors, commonly used in:
- Switching circuits (relays, LEDs, motors)
- Interface circuits (signal buffering, level shifting)
- Consumer electronics (TVs, audio systems, appliances)
- Industrial control systems (PLC I/O, sensors)
- Automotive electronics (lighting, power management)
Its integrated resistors simplify design, reduce component count, and enhance reliability in low-power digital applications.
- Switching circuits (relays, LEDs, motors)
- Interface circuits (signal buffering, level shifting)
- Consumer electronics (TVs, audio systems, appliances)
- Industrial control systems (PLC I/O, sensors)
- Automotive electronics (lighting, power management)
Its integrated resistors simplify design, reduce component count, and enhance reliability in low-power digital applications.
Package
The MUN5211DW1T1G is a dual NPN resistor-equipped transistor (RET) in a SOT-363 (SC-88) surface-mount package. It features two transistors with built-in resistors, designed for compact and efficient circuit designs. The package is small, measuring approximately 2.0 x 1.25 x 0.8 mm, making it suitable for space-constrained applications.
