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NCV57001DWR2G
+BOMDGTL ISO 1.2KV 1CH GT DVR 16SOIC
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Nhà sản xuấtonsemi
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Ông. Phần #NCV57001DWR2G
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Bảng dữ liệu NCV57001DWR2G DataSheet
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Part Status | Active |
| Technology | Capacitive Coupling |
| Number of Channels | 1 |
| Voltage - Isolation | 1200Vrms |
| Common Mode Transient Immunity (Min) | 100kV/µs |
| Propagation Delay tp LH / tp HL (Max) | 90ns, 90ns |
| Rise / Fall Time (Typ) | 10ns, 15ns |
| Current - Output High, Low | 7.8A, 7.1A |
| Voltage - Output Supply | 0V ~ 24V |
| Grade | Automotive |
| Operating Temperature | -40°C ~ 125°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 16-SOIC (0.295", 7.50mm Width) |
| Supplier Device Package | 16-SOIC |
| Approval Agency | UL, VDE |
| Base Product Number | NCV57001 |
| Qualification | AEC-Q100 |
Tổng quan
Description
Key features of the NCV57001DWR2G include its ability to deliver up to 4A of peak current, which enables rapid switching of power devices, reducing switching losses. It operates over a wide voltage range and features a built-in protection mechanism to safeguard against overcurrent and undervoltage conditions. The device ensures galvanic isolation, which enhances safety and minimizes noise transmission between high-power and low-power sections of a system.
The NCV57001DWR2G is known for its low propagation delay and high-efficiency operation, which are critical for high-frequency applications. It comes in a compact SOIC-8 package, making it suitable for space-constrained environments. This gate driver is especially well-suited for applications in electric vehicles, renewable energy systems, and industrial motor drives.
Equivalent
1. IXYS IXDN609SI - Dual low-side gate driver.
2. Microchip Technology's MIC4427 - Dual high-speed power MOSFET driver.
3. Texas Instruments UCC27511 - High-speed low-side gate driver.
Always verify compatibility based on your specific application requirements.
Features
1. High Output Current: Capable of sourcing and sinking up to 4 A, which ensures effective switching for power devices.
2. Fast Switching: Features a short propagation delay, typically around 60 ns, enhancing efficiency in high-frequency applications.
3. Isolation: Offers galvanic isolation up to 5 kVrms, improving safety and reducing noise coupling in high-voltage applications.
4. Wide Supply Voltage Range: Operates from 7.5 V to 30 V, providing flexibility in power supply options.
5. Protection Features: Includes undervoltage lockout (UVLO) and thermal shutdown to protect against component damage.
6. Desaturation Detection: Offers fault detection for IGBTs and MOSFETs, enhancing reliability.
7. Input Compatibility: Supports both TTL and CMOS logic inputs for diverse interfacing options.
8. Package: Available in SOIC-8, supporting compact designs.
These features make it suitable for automotive, industrial, and consumer applications where efficient and reliable power management is critical.
Pinout
Key features include a wide supply voltage range, under-voltage lockout protection, and the ability to source and sink high peak currents. The device ensures robust operation with its short propagation delays and high noise immunity. It typically has a separate power ground and logic ground, which helps in reducing loop inductance and improving performance. The NCV57001DWR2G is particularly appreciated for its reliability in automotive and industrial environments.