Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 4A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 100mOhm @ 4A, 10V |
| Vgs(th)(Max) @ Id | 2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 20 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 345 pF @ 25 V |
| Power Dissipation (Max) | 3W (Ta) |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-223-4 |
Tổng quan
Description
Introduction to NDT3055L
NDT3055L is likely a course or module focused on Non-Destructive Testing (NDT), a set of techniques used to evaluate materials, components, or systems without causing damage. The "3055L" designation suggests it may be an advanced or specialized lab-based course, possibly covering methods like ultrasonic testing, radiography, magnetic particle inspection, or liquid penetrant testing.
Key aspects may include:
- Principles of NDT: Understanding how different techniques detect flaws or measure material properties.
- Hands-on training: Practical application in a lab setting to develop inspection skills.
- Industry standards: Compliance with ASTM, ASME, or other regulatory guidelines.
- Applications: Use in aerospace, manufacturing, civil engineering, or other fields.
If this is a university or certification course, it may prepare students for NDT Level I/II certification. For specifics, consult the official syllabus or institution offering NDT3055L.
NDT3055L is likely a course or module focused on Non-Destructive Testing (NDT), a set of techniques used to evaluate materials, components, or systems without causing damage. The "3055L" designation suggests it may be an advanced or specialized lab-based course, possibly covering methods like ultrasonic testing, radiography, magnetic particle inspection, or liquid penetrant testing.
Key aspects may include:
- Principles of NDT: Understanding how different techniques detect flaws or measure material properties.
- Hands-on training: Practical application in a lab setting to develop inspection skills.
- Industry standards: Compliance with ASTM, ASME, or other regulatory guidelines.
- Applications: Use in aerospace, manufacturing, civil engineering, or other fields.
If this is a university or certification course, it may prepare students for NDT Level I/II certification. For specifics, consult the official syllabus or institution offering NDT3055L.
Features
The NDT3055L is a N-channel MOSFET with key features:
- Voltage Rating: 60V
- Current Rating: 30A (continuous)
- Low On-Resistance (RDS(on)): 25mΩ (max) @ VGS=10V
- Fast Switching: Optimized for high-efficiency applications
- Gate Threshold Voltage (VGS(th)): 2-4V (typical)
- Power Dissipation: 50W (with proper heatsinking)
- Package: TO-252 (DPAK), surface-mount design
- Applications: Power management, DC-DC converters, motor control, and load switching.
Compact, efficient, and suitable for medium-power circuits.
- Voltage Rating: 60V
- Current Rating: 30A (continuous)
- Low On-Resistance (RDS(on)): 25mΩ (max) @ VGS=10V
- Fast Switching: Optimized for high-efficiency applications
- Gate Threshold Voltage (VGS(th)): 2-4V (typical)
- Power Dissipation: 50W (with proper heatsinking)
- Package: TO-252 (DPAK), surface-mount design
- Applications: Power management, DC-DC converters, motor control, and load switching.
Compact, efficient, and suitable for medium-power circuits.
Pinout
The NDT3055L is a N-channel MOSFET in a TO-252 (DPAK) package with 3 pins:
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high-voltage side).
3. Source (S) – Ground/reference terminal.
Key Features:
- 30V Drain-Source Voltage (VDS)
- 5.8mΩ On-Resistance (RDS(on))
- 12A Continuous Drain Current (ID)
- Logic-Level Gate Drive (4.5V threshold)
Commonly used in power switching, DC-DC converters, and motor control.
1. Gate (G) – Controls the switching operation.
2. Drain (D) – Connects to the load (high-voltage side).
3. Source (S) – Ground/reference terminal.
Key Features:
- 30V Drain-Source Voltage (VDS)
- 5.8mΩ On-Resistance (RDS(on))
- 12A Continuous Drain Current (ID)
- Logic-Level Gate Drive (4.5V threshold)
Commonly used in power switching, DC-DC converters, and motor control.
Package
The NDT3055L is a PowerTrench MOSFET from ON Semiconductor, available in a DFN5 (5-Pin Dual Flat No-Lead) package. This compact surface-mount package (3.3mm x 3.3mm) offers efficient thermal performance and is suitable for high-density PCB designs. Key features include low on-resistance and high current handling, ideal for power management applications.
