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NTB25P06T4G
+BOMMOSFET P-CH 60V 27.5A D2PAK
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Nhà sản xuấtonsemi
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Ông. Phần #NTB25P06T4G
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Bảng dữ liệu NTB25P06T4G DataSheet
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Supplier | onsemi |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 27.5A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 82mOhm @ 25A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 50 nC @ 10 V |
| Vgs(Max) | ±15V |
| Input Capacitance(Ciss)(Max) @ Vds | 1680 pF @ 25 V |
| Power Dissipation (Max) | 120W (Tj) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D²PAK |
Tổng quan
Description
1. Type: P-channel MOSFET, which means it turns on when a negative voltage is applied to the gate relative to the source.
2. Voltage and Current Ratings: Generally, it operates with a V_DS (drain-source voltage) of up to -60V and a continuous drain current (I_D) capacity of approximately -25A, making it suitable for high-power applications.
3. Package: It comes in a TO-220 package, which provides good thermal performance and is suitable for through-hole mounting on PCBs.
4. Applications: Commonly used in power management, motor control, DC/DC converters, and load switch applications due to its efficiency and reliability.
5. Performance: It offers low on-resistance (R_DS(on)), which minimizes power loss and heat generation during operation.
The NTB25P06T4G is valued for its robustness and efficiency in handling high-power loads, making it a versatile component in various electronic designs.
Equivalent
Features
1. P-Channel: This MOSFET is designed to conduct when the gate is negatively biased relative to the source.
2. Voltage and Current: It typically supports a drain-source voltage (V_DS) of up to -60V and a continuous drain current (I_D) of approximately -25A.
3. R_DS(on): It has a low on-resistance, which ensures efficient current flow with minimal power loss.
4. Package Type: The device comes in a TO-220 package, which provides good thermal conductivity and ease of mounting on heat sinks.
5. Thermal Performance: It is designed to handle high power dissipation with a maximum junction temperature rating, ensuring reliability in demanding applications.
6. Applications: Suitable for use in power management, DC-DC converters, and other applications requiring efficient voltage regulation and switching.
7. Enhanced Design: Features avalanche energy capacity, ensuring robustness against voltage spikes.
This MOSFET is valued for its efficiency, reliability, and suitability for high-power applications.
Pinout
1. Gate (G): This pin is used to control the MOSFET by applying voltage, which in turn allows or prevents current flow between the drain and source.
2. Drain (D): This is the pin through which the main current enters the MOSFET when it is in the on-state.
3. Source (S): This pin is the exit point for the current entering through the drain when the MOSFET is conducting.
The NTB25P06T4G is designed for applications requiring a high-current capacity, typically used in power management and switching applications due to its ability to handle significant current while offering low on-state resistance.