NTB25P06T4G

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NTB25P06T4G

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MOSFET P-CH 60V 27.5A D2PAK

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Thông số kỹ thuật

thuộc tính Giá trị
Supplier onsemi
Package / Case Tape & Reel (TR),Cut Tape (CT)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain(Id) @ 25°C 27.5A (Ta)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 82mOhm @ 25A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 50 nC @ 10 V
Vgs(Max) ±15V
Input Capacitance(Ciss)(Max) @ Vds 1680 pF @ 25 V
Power Dissipation (Max) 120W (Tj)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK

Tổng quan

Description

The NTB25P06T4G is a P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) typically used in electronic applications requiring efficient switching and amplification. Key features of this component include:
1. Type: P-channel MOSFET, which means it turns on when a negative voltage is applied to the gate relative to the source.
2. Voltage and Current Ratings: Generally, it operates with a V_DS (drain-source voltage) of up to -60V and a continuous drain current (I_D) capacity of approximately -25A, making it suitable for high-power applications.
3. Package: It comes in a TO-220 package, which provides good thermal performance and is suitable for through-hole mounting on PCBs.
4. Applications: Commonly used in power management, motor control, DC/DC converters, and load switch applications due to its efficiency and reliability.
5. Performance: It offers low on-resistance (R_DS(on)), which minimizes power loss and heat generation during operation.
The NTB25P06T4G is valued for its robustness and efficiency in handling high-power loads, making it a versatile component in various electronic designs.

Equivalent

The NTB25P06T4G is a P-channel MOSFET. Equivalent products include the FQP27P06 from ON Semiconductor, the IRF9540N from Infineon Technologies, and the STP16PF06 from STMicroelectronics. These components share similar electrical characteristics such as voltage, current ratings, and package type, making them suitable substitutes in many applications. However, always verify the specific requirements of your application to ensure compatibility.

Features

The NTB25P06T4G is a P-channel power MOSFET, primarily used in electronic circuits for switching and amplification purposes. Here are its key features:
1. P-Channel: This MOSFET is designed to conduct when the gate is negatively biased relative to the source.
2. Voltage and Current: It typically supports a drain-source voltage (V_DS) of up to -60V and a continuous drain current (I_D) of approximately -25A.
3. R_DS(on): It has a low on-resistance, which ensures efficient current flow with minimal power loss.
4. Package Type: The device comes in a TO-220 package, which provides good thermal conductivity and ease of mounting on heat sinks.
5. Thermal Performance: It is designed to handle high power dissipation with a maximum junction temperature rating, ensuring reliability in demanding applications.
6. Applications: Suitable for use in power management, DC-DC converters, and other applications requiring efficient voltage regulation and switching.
7. Enhanced Design: Features avalanche energy capacity, ensuring robustness against voltage spikes.
This MOSFET is valued for its efficiency, reliability, and suitability for high-power applications.

Pinout

The NTB25P06T4G is a P-channel MOSFET produced by ON Semiconductor. It has a total of 3 pins. The typical pin configuration for a TO-220 package, which this MOSFET often comes in, is as follows:
1. Gate (G): This pin is used to control the MOSFET by applying voltage, which in turn allows or prevents current flow between the drain and source.

2. Drain (D): This is the pin through which the main current enters the MOSFET when it is in the on-state.
3. Source (S): This pin is the exit point for the current entering through the drain when the MOSFET is conducting.
The NTB25P06T4G is designed for applications requiring a high-current capacity, typically used in power management and switching applications due to its ability to handle significant current while offering low on-state resistance.

Manufacturer

The NTB25P06T4G is manufactured by ON Semiconductor, now known as onsemi. Onsemi is a leading provider of semiconductor solutions, offering a wide range of products including sensors, power management devices, and connectivity components. The company focuses on providing innovative and energy-efficient solutions for various industries such as automotive, industrial, communications, computing, and consumer electronics. Onsemi is recognized for its commitment to sustainability and has a strong emphasis on developing technologies that contribute to energy conservation and green initiatives.

Application

The NTB25P06T4G is a P-channel MOSFET used in various applications. Key areas include power management systems, where it functions in DC-DC converters and voltage regulation. It's also used in load switching applications due to its low on-resistance, which improves efficiency. Additionally, the MOSFET is deployed in automotive systems, contributing to battery management and motor control. In consumer electronics, it aids in power supply circuits and protection circuitry. Its attributes make it suitable for LED lighting systems and other applications requiring efficient power control and switching.

Package

The NTB25P06T4G is a P-Channel Power MOSFET housed in a DPAK (TO-252) package. This surface-mount package is commonly used for its compact size and efficient thermal performance, suitable for high-density electronic applications.

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