Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain(Id) @ 25°C | 1.65A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 2.5V, 4.5V |
| Rds On(Max) @ Id Vgs | 90mOhm @ 3.3A, 4.5V |
| Vgs(th)(Max) @ Id | 1.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 14 nC @ 4.5 V |
| Vgs(Max) | ±8V |
| Input Capacitance(Ciss)(Max) @ Vds | 480 pF @ 5 V |
| Power Dissipation (Max) | 500mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-TSOP |
Tổng quan
Description
The NTGS3441T1G is an N-channel enhancement-mode MOSFET from ON Semiconductor, designed for high-efficiency switching applications. Key features include:
- Low On-Resistance (RDS(on)): Typically 28 mΩ at 10V (VGS), reducing power losses.
- Fast Switching: Optimized for high-speed operations (e.g., power supplies, motor control).
- Low Gate Charge (Qg): Enhances efficiency in high-frequency circuits.
- Voltage Rating: 30V (VDS), suitable for low-voltage applications like DC-DC converters or load switches.
- Compact Package: SOT-23, ideal for space-constrained designs.
Common uses include power management in portable electronics, battery protection, and LED drivers. Its balance of low RDS(on) and fast switching makes it a versatile choice for energy-efficient designs.
For detailed specs, refer to the datasheet.
- Low On-Resistance (RDS(on)): Typically 28 mΩ at 10V (VGS), reducing power losses.
- Fast Switching: Optimized for high-speed operations (e.g., power supplies, motor control).
- Low Gate Charge (Qg): Enhances efficiency in high-frequency circuits.
- Voltage Rating: 30V (VDS), suitable for low-voltage applications like DC-DC converters or load switches.
- Compact Package: SOT-23, ideal for space-constrained designs.
Common uses include power management in portable electronics, battery protection, and LED drivers. Its balance of low RDS(on) and fast switching makes it a versatile choice for energy-efficient designs.
For detailed specs, refer to the datasheet.
Features
The NTGS3441T1G is an N-channel MOSFET with the following key features:
- Voltage Rating: 30V (Drain-to-Source, VDS)
- Current Rating: 6.3A (Continuous Drain Current, ID)
- Low On-Resistance: 28mΩ (max at VGS = 10V)
- Gate Threshold Voltage: 1V (min) to 2.5V (max)
- Fast Switching: Low gate charge (11nC typical)
- Power Dissipation: 2W (max)
- Package: SOT-23 (Compact surface-mount)
- Applications: Power management, load switching, DC-DC converters.
Designed for efficiency in low-voltage circuits, it offers high performance in a small footprint.
- Voltage Rating: 30V (Drain-to-Source, VDS)
- Current Rating: 6.3A (Continuous Drain Current, ID)
- Low On-Resistance: 28mΩ (max at VGS = 10V)
- Gate Threshold Voltage: 1V (min) to 2.5V (max)
- Fast Switching: Low gate charge (11nC typical)
- Power Dissipation: 2W (max)
- Package: SOT-23 (Compact surface-mount)
- Applications: Power management, load switching, DC-DC converters.
Designed for efficiency in low-voltage circuits, it offers high performance in a small footprint.
Pinout
The NTGS3441T1G is a 4-pin N-channel MOSFET in a SOT-223 package.
Pin Functions:
1. Gate (G): Controls the switching operation.
2. Drain (D): Connects to the load (high-voltage side).
3. Source (S): Connects to ground (low-voltage side).
4. Drain (D) (repeated): The SOT-223 package has two drain pins for better thermal performance, but they are internally connected.
Key Features:
- 30V drain-source voltage (VDS)
- 5.8A continuous drain current (ID)
- Low on-resistance (RDS(on) = 28mΩ at 10V VGS)
Commonly used in power switching, DC-DC converters, and load control applications.
Pin Functions:
1. Gate (G): Controls the switching operation.
2. Drain (D): Connects to the load (high-voltage side).
3. Source (S): Connects to ground (low-voltage side).
4. Drain (D) (repeated): The SOT-223 package has two drain pins for better thermal performance, but they are internally connected.
Key Features:
- 30V drain-source voltage (VDS)
- 5.8A continuous drain current (ID)
- Low on-resistance (RDS(on) = 28mΩ at 10V VGS)
Commonly used in power switching, DC-DC converters, and load control applications.
Application
The NTGS3441T1G is an N-channel MOSFET commonly used in:
- Power Management: Switching regulators, DC-DC converters.
- Load Switching: Control circuits for power distribution.
- Motor Control: Driver circuits for small motors.
- Battery Protection: Overcurrent/overvoltage protection in portable devices.
- LED Drivers: Efficient current control in lighting systems.
Its low on-resistance and fast switching make it suitable for compact, energy-efficient applications.
- Power Management: Switching regulators, DC-DC converters.
- Load Switching: Control circuits for power distribution.
- Motor Control: Driver circuits for small motors.
- Battery Protection: Overcurrent/overvoltage protection in portable devices.
- LED Drivers: Efficient current control in lighting systems.
Its low on-resistance and fast switching make it suitable for compact, energy-efficient applications.
Package
The NTGS3441T1G is a MOSFET transistor packaged in a SOT-23-3 (TO-236AB) surface-mount package. This compact, 3-pin package is widely used for small-signal and low-power applications, offering good thermal performance and space efficiency. It is suitable for automated PCB assembly.
