Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 11.9A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 3.4mOhm @ 30A, 10V |
| Vgs(th)(Max) @ Id | 2.2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 14 nC @ 4.5 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1972 pF @ 15 V |
| Power Dissipation (Max) | 770mW (Ta), 33W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
Tổng quan
Description
The NTMFS4C05NT1G is an N-channel MOSFET from ON Semiconductor, designed for high-efficiency power management applications. Key features include:
- Low On-Resistance (RDS(on)): 5.3 mΩ (max) at VGS = 10 V, reducing conduction losses.
- High Current Handling: 30 A continuous drain current (ID).
- Fast Switching: Optimized for high-frequency applications like DC-DC converters and motor control.
- Low Gate Charge (Qg): Enhances efficiency in switching circuits.
- Compact Package: DFN5 (5x6 mm), suitable for space-constrained designs.
Ideal for load switching, power supplies, and battery management in consumer electronics, automotive, and industrial systems. Its robust thermal performance and low power dissipation make it a reliable choice for energy-efficient designs.
For detailed specs, refer to the datasheet.
- Low On-Resistance (RDS(on)): 5.3 mΩ (max) at VGS = 10 V, reducing conduction losses.
- High Current Handling: 30 A continuous drain current (ID).
- Fast Switching: Optimized for high-frequency applications like DC-DC converters and motor control.
- Low Gate Charge (Qg): Enhances efficiency in switching circuits.
- Compact Package: DFN5 (5x6 mm), suitable for space-constrained designs.
Ideal for load switching, power supplies, and battery management in consumer electronics, automotive, and industrial systems. Its robust thermal performance and low power dissipation make it a reliable choice for energy-efficient designs.
For detailed specs, refer to the datasheet.
Equivalent
Equivalent products to the NTMFS4C05NT1G (30V, 5.8mΩ MOSFET) include:
- Infineon BSC010NE2LS5 (30V, 5.8mΩ)
- Vishay SiR478DP (30V, 5.8mΩ)
- ON Semiconductor NVMFS5C404N (40V, 4.0mΩ, higher rating)
- Renesas RJK0305DPB (30V, 5.2mΩ)
Check datasheets for exact compatibility in your application.
- Infineon BSC010NE2LS5 (30V, 5.8mΩ)
- Vishay SiR478DP (30V, 5.8mΩ)
- ON Semiconductor NVMFS5C404N (40V, 4.0mΩ, higher rating)
- Renesas RJK0305DPB (30V, 5.2mΩ)
Check datasheets for exact compatibility in your application.
Features
The NTMFS4C05NT1G is an N-channel MOSFET with the following key features:
- Voltage Rating: 30V
- Current Rating: 60A (continuous), 240A (pulsed)
- Low On-Resistance (RDS(on)): 1.8mΩ (max) @ VGS = 10V
- Gate Threshold Voltage (VGS(th)): 1V (typical)
- Fast Switching: Optimized for high-efficiency power applications
- Package: PowerPAK® SO-8 (compact, thermally enhanced)
- Low Gate Charge (Qg): 38nC (typical) for reduced switching losses
- AEC-Q101 Qualified: Suitable for automotive applications
Ideal for DC-DC converters, motor control, and power management in automotive and industrial systems.
- Voltage Rating: 30V
- Current Rating: 60A (continuous), 240A (pulsed)
- Low On-Resistance (RDS(on)): 1.8mΩ (max) @ VGS = 10V
- Gate Threshold Voltage (VGS(th)): 1V (typical)
- Fast Switching: Optimized for high-efficiency power applications
- Package: PowerPAK® SO-8 (compact, thermally enhanced)
- Low Gate Charge (Qg): 38nC (typical) for reduced switching losses
- AEC-Q101 Qualified: Suitable for automotive applications
Ideal for DC-DC converters, motor control, and power management in automotive and industrial systems.
Pinout
The NTMFS4C05NT1G is a Power MOSFET in a DFN-5 (5-pin) package.
Pin Functions:
1. Gate (G) – Controls the MOSFET switching.
2. Drain (D) – Connected to the high-side load.
3. Source (S) – Connected to ground.
4. Thermal Pad (Exposed Pad) – Enhances heat dissipation (typically connected to ground).
This 30V, 20A MOSFET is optimized for high-efficiency power switching in applications like DC-DC converters and load switches.
Pin Functions:
1. Gate (G) – Controls the MOSFET switching.
2. Drain (D) – Connected to the high-side load.
3. Source (S) – Connected to ground.
4. Thermal Pad (Exposed Pad) – Enhances heat dissipation (typically connected to ground).
This 30V, 20A MOSFET is optimized for high-efficiency power switching in applications like DC-DC converters and load switches.
Manufacturer
The NTMFS4C05NT1G is manufactured by ON Semiconductor, now known as onsemi after rebranding in 2021.
onsemi is a global semiconductor company specializing in power management, analog, and sensor technologies. It serves industries like automotive, industrial, and consumer electronics, focusing on energy-efficient solutions.
The NTMFS4C05NT1G is a 30V, 50A MOSFET designed for high-performance power applications.
onsemi is a global semiconductor company specializing in power management, analog, and sensor technologies. It serves industries like automotive, industrial, and consumer electronics, focusing on energy-efficient solutions.
The NTMFS4C05NT1G is a 30V, 50A MOSFET designed for high-performance power applications.
Application
The NTMFS4C05NT1G is a power MOSFET commonly used in:
1. Power Management – DC-DC converters, voltage regulation.
2. Automotive Systems – LED lighting, motor control, battery management.
3. Consumer Electronics – Power supplies, load switches.
4. Industrial Applications – Motor drives, inverters.
5. Computing – Server power delivery, VRMs.
Its low on-resistance and high efficiency make it suitable for high-current, low-voltage applications.
1. Power Management – DC-DC converters, voltage regulation.
2. Automotive Systems – LED lighting, motor control, battery management.
3. Consumer Electronics – Power supplies, load switches.
4. Industrial Applications – Motor drives, inverters.
5. Computing – Server power delivery, VRMs.
Its low on-resistance and high efficiency make it suitable for high-current, low-voltage applications.
