Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101, SuperFET® III, FRFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain(Id) @ 25°C | 40A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 82mOhm @ 20A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 4mA |
| Gate Charge(Qg)(Max) @ Vgs | 81 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 3410 pF @ 400 V |
| Power Dissipation (Max) | 313W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D²PAK-3 (TO-263-3) |
Tổng quan
Description
The NVB082N65S3F is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed for high-power applications and is known for its efficiency and reliability in switching and amplification tasks within electronic circuits. Key features of the NVB082N65S3F include a breakdown voltage of 650V, a continuous drain current of 82A, and low on-state resistance, which reduces power loss and enhances performance.
This component is typically used in power conversion, motor control, and power supply applications. Its advanced design incorporates SuperFET III technology, offering improved efficiency over previous generations of MOSFETs. The NVB082N65S3F is encapsulated in a TO-247 package, providing excellent thermal performance and ease of mounting for heat dissipation. It is also designed to handle high-speed operations, making it suitable for switching power supplies and other applications requiring efficient energy management. Overall, the NVB082N65S3F is sought after for its robust performance in demanding environments.
This component is typically used in power conversion, motor control, and power supply applications. Its advanced design incorporates SuperFET III technology, offering improved efficiency over previous generations of MOSFETs. The NVB082N65S3F is encapsulated in a TO-247 package, providing excellent thermal performance and ease of mounting for heat dissipation. It is also designed to handle high-speed operations, making it suitable for switching power supplies and other applications requiring efficient energy management. Overall, the NVB082N65S3F is sought after for its robust performance in demanding environments.
Equivalent
The NVB082N65S3F is a N-channel MOSFET produced by ON Semiconductor, known for its low RDS(on) and high voltage rating. Equivalent products include:
1. Infineon IPA65R650C6
2. STMicroelectronics STP65NF06
3. Vishay SiHP065N65E
4. Toshiba TK20A60W
5. NXP PSMN065-100YSE
These alternatives offer similar voltage ratings and performance characteristics, but always verify the datasheet specifications for compatibility in your specific application.
1. Infineon IPA65R650C6
2. STMicroelectronics STP65NF06
3. Vishay SiHP065N65E
4. Toshiba TK20A60W
5. NXP PSMN065-100YSE
These alternatives offer similar voltage ratings and performance characteristics, but always verify the datasheet specifications for compatibility in your specific application.
Features
The NVB082N65S3F is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) known for its use in various electronic applications, particularly in switching and amplification circuits. Here are some of its key features:
1. Voltage Rating: It typically supports a high drain-source voltage, often around 650V, making it suitable for high-voltage applications.
2. Current Rating: It can handle a continuous drain current, often in the range of 80A, which is ideal for power-intensive applications.
3. RDS(on): It offers low on-resistance (RDS(on)), which reduces power loss and improves efficiency.
4. Fast Switching: This MOSFET is designed for rapid switching speeds, which helps in reducing switching losses in circuits.
5. Thermal Performance: It is equipped with good thermal performance features to maintain efficiency and reliability under high-power operations.
6. Package Type: Typically available in standard power MOSFET package types that facilitate easy integration into circuit designs.
These features make the NVB082N65S3F suitable for applications like power supplies, motor drives, and other high-power electronic systems.
1. Voltage Rating: It typically supports a high drain-source voltage, often around 650V, making it suitable for high-voltage applications.
2. Current Rating: It can handle a continuous drain current, often in the range of 80A, which is ideal for power-intensive applications.
3. RDS(on): It offers low on-resistance (RDS(on)), which reduces power loss and improves efficiency.
4. Fast Switching: This MOSFET is designed for rapid switching speeds, which helps in reducing switching losses in circuits.
5. Thermal Performance: It is equipped with good thermal performance features to maintain efficiency and reliability under high-power operations.
6. Package Type: Typically available in standard power MOSFET package types that facilitate easy integration into circuit designs.
These features make the NVB082N65S3F suitable for applications like power supplies, motor drives, and other high-power electronic systems.
Pinout
The NVB082N65S3F is a N-channel MOSFET produced by ON Semiconductor. It is part of their SuperFET® III series, which is designed for high efficiency and high-speed switching applications. The device typically comes in a TO-220 or D2PAK package, which generally have three pins:
1. Gate (G): This pin is used to control the on/off state of the MOSFET. By applying a voltage to the gate, you can switch the device from a non-conducting to a conducting state.
2. Drain (D): The drain is where the main current flows out of the MOSFET when it is in the conducting state. It is connected to the load in most applications.
3. Source (S): This pin is connected to the ground or return path of the circuit. When the MOSFET is conducting, current flows from the drain to the source.
This MOSFET is used in various applications, including power supplies, motor drives, and other systems where efficient power management is crucial. The exact number of pins and the package type should be confirmed with the datasheet for precise application details.
1. Gate (G): This pin is used to control the on/off state of the MOSFET. By applying a voltage to the gate, you can switch the device from a non-conducting to a conducting state.
2. Drain (D): The drain is where the main current flows out of the MOSFET when it is in the conducting state. It is connected to the load in most applications.
3. Source (S): This pin is connected to the ground or return path of the circuit. When the MOSFET is conducting, current flows from the drain to the source.
This MOSFET is used in various applications, including power supplies, motor drives, and other systems where efficient power management is crucial. The exact number of pins and the package type should be confirmed with the datasheet for precise application details.
Manufacturer
The NVB082N65S3F is manufactured by onsemi, formerly known as ON Semiconductor. onsemi is a leading semiconductor company that designs and produces a wide range of semiconductor components. These components are used in various applications, including automotive, industrial, communications, computing, and consumer electronics. onsemi is recognized for its focus on energy-efficient solutions, providing products that help reduce energy consumption and enhance performance across different sectors. The company offers a comprehensive portfolio that includes power and signal management, logic, discrete, and custom devices.
Application
The NVB082N65S3F is a power MOSFET typically used in various applications such as power supplies, motor control, and DC-DC converters. Its high efficiency and low on-resistance make it suitable for use in energy-efficient power management systems. It can also be found in renewable energy systems, like solar inverters, due to its capability to handle high power levels. Additionally, this MOSFET is employed in automotive electronics for systems requiring reliable switching performance, such as electric vehicle battery management and other powertrain applications. Its robust design allows for use in industrial applications that demand high-speed switching and thermal efficiency.
Package
The NVB082N65S3F is a power MOSFET, and it typically comes in a TO-220 package type. This package is widely used for power semiconductors due to its ability to handle significant power levels and provide effective heat dissipation.
