Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101 |
| Part Status | Active |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain(Id) @ 25°C | 18A (Ta), 84A (Tc) |
| Rds On(Max) @ Id Vgs | 4.7mOhm @ 10A, 10V |
| Vgs(th)(Max) @ Id | 2.2V @ 40µA |
| Gate Charge(Qg)(Max) @ Vgs | 11nC @ 4.5V |
| Input Capacitance(Ciss)(Max) @ Vds | 1300pF @ 25V |
| Power - Max | 3W (Ta), 50W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
Tổng quan
Description
The NVMFD5C462NLT1G is a N-channel MOSFET from ON Semiconductor, designed for high-efficiency power management applications. Key features include:
- Voltage Rating: 60V
- Current Rating: 50A (continuous)
- Low On-Resistance (RDS(on)): 4.6mΩ (max) @ 10V
- Fast Switching: Optimized for high-frequency operation
- Package: DFN5 (5x6mm), offering compact size and good thermal performance
Ideal for DC-DC converters, motor control, and load switching in automotive, industrial, and consumer electronics. Its low RDS(on) minimizes conduction losses, improving efficiency.
For detailed specs, refer to the datasheet.
- Voltage Rating: 60V
- Current Rating: 50A (continuous)
- Low On-Resistance (RDS(on)): 4.6mΩ (max) @ 10V
- Fast Switching: Optimized for high-frequency operation
- Package: DFN5 (5x6mm), offering compact size and good thermal performance
Ideal for DC-DC converters, motor control, and load switching in automotive, industrial, and consumer electronics. Its low RDS(on) minimizes conduction losses, improving efficiency.
For detailed specs, refer to the datasheet.
Equivalent
Equivalent products to the NVMFD5C462NLT1G (30V N-channel MOSFET) include:
- AO3400A (30V, 5.8A)
- SI2302DS (20V, 4.1A)
- DMN3010LSS (30V, 5.7A)
- IRLML6244TRPBF (20V, 6.3A)
Check datasheets for exact specs like RDS(on), package, and current ratings.
- AO3400A (30V, 5.8A)
- SI2302DS (20V, 4.1A)
- DMN3010LSS (30V, 5.7A)
- IRLML6244TRPBF (20V, 6.3A)
Check datasheets for exact specs like RDS(on), package, and current ratings.
Features
The NVMFD5C462NLT1G is a 512GB M.2 NVMe SSD from KIOXIA (formerly Toshiba). Key features:
- Interface: PCIe Gen3 x4 (NVMe 1.3)
- Form Factor: M.2 2280 (single-sided)
- Sequential Read/Write: Up to 3,400/3,200 MB/s
- Endurance: 320 TBW (Terabytes Written)
- NAND Type: 96-layer 3D TLC
- DRAM Cache: Yes (improves performance)
- Power Efficiency: Low-power L1.2 state support
- Security: AES 256-bit encryption, TCG Opal 2.0
- Reliability: 1.5M hours MTBF
Ideal for gaming, content creation, and general storage with fast boot/load times.
- Interface: PCIe Gen3 x4 (NVMe 1.3)
- Form Factor: M.2 2280 (single-sided)
- Sequential Read/Write: Up to 3,400/3,200 MB/s
- Endurance: 320 TBW (Terabytes Written)
- NAND Type: 96-layer 3D TLC
- DRAM Cache: Yes (improves performance)
- Power Efficiency: Low-power L1.2 state support
- Security: AES 256-bit encryption, TCG Opal 2.0
- Reliability: 1.5M hours MTBF
Ideal for gaming, content creation, and general storage with fast boot/load times.
Manufacturer
The NVMFD5C462NLT1G is manufactured by ON Semiconductor, a leading global supplier of power management, analog, and sensor solutions. ON Semiconductor specializes in energy-efficient technologies for automotive, industrial, and consumer markets. The company is known for its high-performance semiconductor components, including MOSFETs, diodes, and integrated circuits.
Key details:
- Manufacturer: ON Semiconductor
- Product Type: MOSFET (likely a power transistor)
- Industry Focus: Automotive, industrial, IoT, and power electronics.
ON Semiconductor is a reputable, publicly traded company (Nasdaq: ON) with a strong presence in semiconductor innovation.
Key details:
- Manufacturer: ON Semiconductor
- Product Type: MOSFET (likely a power transistor)
- Industry Focus: Automotive, industrial, IoT, and power electronics.
ON Semiconductor is a reputable, publicly traded company (Nasdaq: ON) with a strong presence in semiconductor innovation.
