Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101 |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 49A (Ta), 319A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 0.9mOhm @ 30A, 10V |
| Vgs(th)(Max)@Id | 2.2V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 139 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 10144 pF @ 15 V |
| PowerDissipation(Max) | 3.84W (Ta), 161W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 5-DFN (5x6) (8-SOFL) |
Tổng quan
Description
NVMFS4C01NT1G is a specific model of non-volatile memory (NVM) chip, often used in electronic devices for data storage. It belongs to the NAND flash memory category, which is known for its durability, speed, and efficiency in storing large amounts of data. This chip is typically utilized in various applications, including smartphones, tablets, SSDs, and other consumer electronics, where reliable data storage is critical.
Key features of the NVMFS4C01NT1G may include high density, fast read/write speeds, and low power consumption, making it ideal for mobile and embedded systems. The "4C01" often denotes specific characteristics like memory density or performance specifications, while "NT1G" might refer to package type or other technical parameters.
Overall, its role is to provide efficient storage solutions in devices, ensuring quick access to data while maintaining data integrity over time. Its design and architecture allow for robust performance, catering to the increasing demand for advanced memory solutions in the tech industry.
Key features of the NVMFS4C01NT1G may include high density, fast read/write speeds, and low power consumption, making it ideal for mobile and embedded systems. The "4C01" often denotes specific characteristics like memory density or performance specifications, while "NT1G" might refer to package type or other technical parameters.
Overall, its role is to provide efficient storage solutions in devices, ensuring quick access to data while maintaining data integrity over time. Its design and architecture allow for robust performance, catering to the increasing demand for advanced memory solutions in the tech industry.
Equivalent
The NVMFS4C01NT1G is a power MOSFET produced by ON Semiconductor. Equivalent products might include similar N-channel MOSFETs from other manufacturers that match its key specifications, such as voltage and current ratings, package type, and RDS(ON) value. Possible equivalents could be Infineon's IRF540N, Vishay's SI4484EY, or STMicroelectronics' STP55NF06, among others. Always verify specifics like package type and electrical characteristics to ensure compatibility with your application.
Features
The NVMFS4C01NT1G is a power MOSFET designed for efficient switching applications. Key features include:
1. Voltage Rating: It typically supports a drain-source voltage (V_DS) of around 40V, making it suitable for a wide range of applications.
2. Current Capacity: It can handle high continuous drain current, often up to the range of 50A, supporting high-power operations.
3. Low R_DS(on): It has a low on-resistance, reducing power losses and improving efficiency in electronic circuits.
4. Package Type: The device is commonly available in a compact SO-8FL package, which aids in heat dissipation and space conservation on PCBs.
5. Thermal Performance: Optimized for excellent thermal performance, often featuring a thermally enhanced package.
6. Applications: Suitable for use in DC-DC converters, load switches, and synchronous rectification in power supplies.
7. Reliability: Offers robust reliability with a wide range of operating temperatures.
These features make the NVMFS4C01NT1G a versatile choice for various high-efficiency and high-reliability power management tasks.
1. Voltage Rating: It typically supports a drain-source voltage (V_DS) of around 40V, making it suitable for a wide range of applications.
2. Current Capacity: It can handle high continuous drain current, often up to the range of 50A, supporting high-power operations.
3. Low R_DS(on): It has a low on-resistance, reducing power losses and improving efficiency in electronic circuits.
4. Package Type: The device is commonly available in a compact SO-8FL package, which aids in heat dissipation and space conservation on PCBs.
5. Thermal Performance: Optimized for excellent thermal performance, often featuring a thermally enhanced package.
6. Applications: Suitable for use in DC-DC converters, load switches, and synchronous rectification in power supplies.
7. Reliability: Offers robust reliability with a wide range of operating temperatures.
These features make the NVMFS4C01NT1G a versatile choice for various high-efficiency and high-reliability power management tasks.
Pinout
The NVMFS4C01NT1G is a power MOSFET from ON Semiconductor. It features an N-channel MOSFET design, typically used for switching applications. The component is housed in a DFN package, which is a type of surface-mount device.
Pin Count and Functions:
1. Gate (G): This is the control pin used to turn the MOSFET on or off. Applying a voltage to the gate controls the flow of current between the drain and source.
2. Drain (D): This pin is one of the main current-carrying terminals. Current flows from drain to source when the MOSFET is on.
3. Source (S): The source is the other main current-carrying terminal. It is typically connected to ground or a negative voltage in N-channel MOSFETs.
4. Drain (D): Often, in DFN packages, the drain pad can be connected to multiple pins for enhanced current handling and thermal performance.
The exact number of drain pins can vary based on the package configuration. For detailed specifications and pin mapping, refer to the datasheet provided by ON Semiconductor. This summary highlights major functions but does not cover all possible connections or package variants.
Pin Count and Functions:
1. Gate (G): This is the control pin used to turn the MOSFET on or off. Applying a voltage to the gate controls the flow of current between the drain and source.
2. Drain (D): This pin is one of the main current-carrying terminals. Current flows from drain to source when the MOSFET is on.
3. Source (S): The source is the other main current-carrying terminal. It is typically connected to ground or a negative voltage in N-channel MOSFETs.
4. Drain (D): Often, in DFN packages, the drain pad can be connected to multiple pins for enhanced current handling and thermal performance.
The exact number of drain pins can vary based on the package configuration. For detailed specifications and pin mapping, refer to the datasheet provided by ON Semiconductor. This summary highlights major functions but does not cover all possible connections or package variants.
Manufacturer
The NVMFS4C01NT1G is manufactured by onsemi, formerly known as ON Semiconductor. onsemi is a leading supplier in the semiconductor industry, specializing in designing, manufacturing, and marketing a broad portfolio of products. These products include power and signal management, logic, discrete, and custom devices. The company caters to a wide range of industries, including automotive, industrial, cloud power, and the Internet of Things (IoT). onsemi is recognized for its focus on energy-efficient innovations and is committed to driving technology that contributes to sustainable electronics solutions.
Application
The NVMFS4C01NT1G is a Power MOSFET typically used in applications requiring efficient power management. Its application areas include:
1. Automotive Systems: Used in electronic control units, lighting, and motor control due to its high efficiency and reliability.
2. Consumer Electronics: Suitable for power supplies and battery management systems.
3. Industrial Automation: Employed in control systems and power conversion circuits.
4. Telecommunications: Used in base stations and network power supplies for efficient energy use.
5. Renewable Energy Systems: Assists in managing power in solar inverters and other clean energy solutions.
These areas benefit from its low on-resistance and high-speed switching capabilities.
1. Automotive Systems: Used in electronic control units, lighting, and motor control due to its high efficiency and reliability.
2. Consumer Electronics: Suitable for power supplies and battery management systems.
3. Industrial Automation: Employed in control systems and power conversion circuits.
4. Telecommunications: Used in base stations and network power supplies for efficient energy use.
5. Renewable Energy Systems: Assists in managing power in solar inverters and other clean energy solutions.
These areas benefit from its low on-resistance and high-speed switching capabilities.
Package
The NVMFS4C01NT1G is a power MOSFET with a DFN (Dual Flat No-leads) 5x6 mm package type.
