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NVMFS4C03NWFT1G
+BOMMOSFET N-CH 30V 31.4A/143A 5DFN
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Ông. Phần #NVMFS4C03NWFT1G
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 31.4A (Ta), 143A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 2.1mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 45.2 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3071 pF @ 15 V |
| Power Dissipation (Max) | 3.71W (Ta), 77W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Base Product Number | NVMFS4 |
Tổng quan
Description
The device operates in the enhancement mode, allowing it to control electrical current effectively when voltage is applied to the gate terminal. It is known for high thermal stability and reliability, which are crucial in demanding applications.
When selecting this component, it’s essential to consider parameters like its maximum voltage, current ratings, and thermal characteristics to ensure compatibility with specific circuit designs. Overall, the NVMFS4C03NWFT1G is an important component in modern electronic applications requiring efficient power management.
Equivalent
Features
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: It can handle continuous drain current (ID) up to 20A, allowing for efficient power management.
3. RDS(on): The on-resistance is low, typically around 10 mΩ, which minimizes power loss during operation.
4. Gate Threshold Voltage (VGS(th)): It has a gate threshold voltage ranging from 1V to 2.5V, facilitating fast switching.
5. Package: Available in a compact SO-8 surface-mount package, which aids in PCB space conservation.
6. Thermal Performance: It has good thermal resistance, supporting heat dissipation in high-performance applications.
Overall, the NVMFS4C03NWFT1G is ideal for power management, switching regulators, and other efficient electronic designs.
Pinout
1. Gate (G): Controls the MOSFET operation by turning it on or off.
2. Drain (D): The output terminal where the load is connected and current flows out.
3. Source (S): The terminal through which current enters the MOSFET.
4. Body (B): Internal connection to the source, usually not externally connected.
The device is designed for high efficiency and low on-resistance, making it suitable for applications like power converters, motor drives, and other power management systems. Its compact package and performance characteristics help improve overall system efficiency.
Manufacturer
Application
1. Power Supply Circuits: Efficient switching in DC-DC converters and voltage regulators.
2. Motor Control: Driving motors in industrial automation and electric vehicles.
3. Load Switching: Managing power distribution in consumer electronics and appliances.
4. Class D Amplifiers: Enhancing audio amplification in audio equipment.
5. LED Drivers: Controlling LED lighting systems for energy efficiency.
The device's low on-resistance and fast switching capabilities make it suitable for high-efficiency applications.