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NVMFS5C646NLT1G
+BOMMOSFET N-CH 60V 20A/93A 5DFN
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Ông. Phần #NVMFS5C646NLT1G
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Bảng dữ liệu NVMFS5C646NLT1G DataSheet
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Part Status | Discontinued at Digi-Key |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta), 93A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 33.7 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2164 pF @ 25 V |
| Power Dissipation (Max) | 3.7W (Ta), 79W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Base Product Number | NVMFS5 |
Tổng quan
Description
The NVMFS5C646NLT1G is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient power management applications. It features a low on-resistance (R_DS(on)), which minimizes power losses during operation, making it suitable for high-efficiency power supplies, DC-DC converters, and motor control systems.
This device supports a maximum drain-source voltage (V_DS) of 60V and has a continuous drain current (I_D) rating that allows it to handle substantial loads. Its fast switching capabilities enhance performance in applications requiring rapid changes in power delivery.
The NVMFS5C646NLT1G is housed in a compact SO-8 package, facilitating space-efficient designs. It also includes features like a low gate charge for reduced drive losses, making it ideal for battery-powered devices and portable applications.
Overall, this MOSFET is valued for its reliability, thermal performance, and ability to drive various power electronics applications efficiently.
This device supports a maximum drain-source voltage (V_DS) of 60V and has a continuous drain current (I_D) rating that allows it to handle substantial loads. Its fast switching capabilities enhance performance in applications requiring rapid changes in power delivery.
The NVMFS5C646NLT1G is housed in a compact SO-8 package, facilitating space-efficient designs. It also includes features like a low gate charge for reduced drive losses, making it ideal for battery-powered devices and portable applications.
Overall, this MOSFET is valued for its reliability, thermal performance, and ability to drive various power electronics applications efficiently.
Equivalent
The NVMFS5C646NLT1G chip is a Power MOSFET. Equivalent products include the NVMFS5C646NL, NVMFS5C646N, and the SI7456DP. Always verify specifications like voltage, current ratings, and package type when looking for replacements to ensure compatibility in your application.
Features
The NVMFS5C646NLT1G is a N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Low RDS(ON): Provides efficient performance with minimal conduction losses.
2. High Speed: Capable of fast switching, making it suitable for high-frequency applications.
3. Low Gate Charge (Qg): Reduces drive power requirements and improves efficiency in switching.
4. High Voltage Rating: Typically supports drain-source voltages up to 60V, suitable for various applications.
5. Thermal Performance: Comes in a compact package that allows for effective heat dissipation.
6. Surface Mount Technology (SMD): Facilitates easy integration into circuits and space-saving designs.
7. High Reliability: Designed for robust operation in demanding environments.
This MOSFET is ideal for applications such as DC-DC converters, motor drivers, and power management systems.
1. Low RDS(ON): Provides efficient performance with minimal conduction losses.
2. High Speed: Capable of fast switching, making it suitable for high-frequency applications.
3. Low Gate Charge (Qg): Reduces drive power requirements and improves efficiency in switching.
4. High Voltage Rating: Typically supports drain-source voltages up to 60V, suitable for various applications.
5. Thermal Performance: Comes in a compact package that allows for effective heat dissipation.
6. Surface Mount Technology (SMD): Facilitates easy integration into circuits and space-saving designs.
7. High Reliability: Designed for robust operation in demanding environments.
This MOSFET is ideal for applications such as DC-DC converters, motor drivers, and power management systems.
Pinout
The NVMFS5C646NLT1G is a Power MOSFET from ON Semiconductor, featuring a total of 8 pins. Its key functions include:
1. Gate (G): Controls the MOSFET's on/off state.
2. Drain (D): Connects to the load and carries the current when the device is on.
3. Source (S): Connects to ground or the negative side of the power supply.
The MOSFET is designed for efficient switching and can handle high currents, making it suitable for applications like power management, motor control, and DC-DC converters. It features a low on-resistance, which helps minimize power loss. The device is packaged in a compact surface-mount format for ease of integration into various electronic designs.
1. Gate (G): Controls the MOSFET's on/off state.
2. Drain (D): Connects to the load and carries the current when the device is on.
3. Source (S): Connects to ground or the negative side of the power supply.
The MOSFET is designed for efficient switching and can handle high currents, making it suitable for applications like power management, motor control, and DC-DC converters. It features a low on-resistance, which helps minimize power loss. The device is packaged in a compact surface-mount format for ease of integration into various electronic designs.
Manufacturer
The manufacturer of the NVMFS5C646NLT1G is ON Semiconductor. ON Semiconductor is a global supplier of semiconductor-based solutions, focusing on energy-efficient technologies and products. The company provides a wide range of semiconductor components, including discrete devices, analog ICs, and power management solutions, serving various sectors such as automotive, industrial, consumer electronics, and communication.
Founded in 1999, ON Semiconductor has grown through strategic acquisitions and innovation, establishing a strong presence in the semiconductor market. Its offerings include high-performance power MOSFETs, which are widely used in modern electronics for power management, efficiency, and thermal performance. The NVMFS5C646NLT1G, in particular, is a power MOSFET designed for applications requiring high efficiency and low on-resistance, making it suitable for various electronic devices and systems.
Overall, ON Semiconductor plays a significant role in advancing technology and driving energy-efficient solutions across multiple industries.
Founded in 1999, ON Semiconductor has grown through strategic acquisitions and innovation, establishing a strong presence in the semiconductor market. Its offerings include high-performance power MOSFETs, which are widely used in modern electronics for power management, efficiency, and thermal performance. The NVMFS5C646NLT1G, in particular, is a power MOSFET designed for applications requiring high efficiency and low on-resistance, making it suitable for various electronic devices and systems.
Overall, ON Semiconductor plays a significant role in advancing technology and driving energy-efficient solutions across multiple industries.
Application
The NVMFS5C646NLT1G is a power MOSFET used in various applications, primarily in power management and conversion systems. Its key areas include synchronous buck converters, DC-DC converters, and power supply circuits. It is suitable for applications in computing, consumer electronics, and renewable energy systems. Additionally, it finds usage in electric vehicles and battery management systems due to its efficiency and thermal performance. The device's low on-resistance and fast switching capabilities make it ideal for high-frequency applications.
Package
The NVMFS5C646NLT1G is packaged in a surface mount SOT-23 form factor.
