NVTFS5820NLTAG

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NVTFS5820NLTAG

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MOSFET N-CH 60V 11A 8WDFN

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  • Gói WDFN-8

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Thông số kỹ thuật

thuộc tính Giá trị
Package / Case Tape & Reel (TR),Cut Tape (CT),Bulk
Series Automotive, AEC-Q101
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain(Id) @ 25°C 11A (Ta)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 11.5mOhm @ 8.7A, 10V
Vgs(th)(Max) @ Id 2.3V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 28 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 1462 pF @ 25 V
Power Dissipation (Max) 3.2W (Ta), 21W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-WDFN (3.3x3.3)

Tổng quan

Description

The NVTFS5820NLTAG is a 30V, 58A N-channel MOSFET from ON Semiconductor, designed for high-efficiency power management in applications like DC-DC converters, load switches, and motor control.
### Key Features:
- Low On-Resistance (RDS(on)): 2.3 mΩ (max) at VGS = 10V, reducing conduction losses.
- High Current Handling: Supports up to 58A continuous drain current.
- Fast Switching: Optimized for high-frequency switching applications.
- Small Footprint: DFN5x6 package for space-constrained designs.
- Low Gate Charge (Qg): Enhances efficiency in high-speed switching.
### Applications:
- Power supplies (synchronous rectification, buck/boost converters).
- Battery management (protection circuits, load switches).
- Automotive & industrial systems.
This MOSFET is ideal for high-current, low-voltage designs requiring minimal power loss and compact form factors.

Equivalent

Equivalent products to the NVTFS5820NLTAG (30V, 5.8A MOSFET) include:
- Infineon BSC093N03LSG (30V, 9.3A)
- ON Semiconductor NTTFS5820NLTAG (same part, alternate manufacturer)
- Vishay SiR582DP (30V, 5.8A)
- Diodes Inc. DMN3010LSD (30V, 5.8A)
Check datasheets for exact compatibility in your application.

Pinout

The NVTFS5820NLTAG is a PowerTrench MOSFET from ON Semiconductor.
- Pin Count: 8 (DFN-8 package)
- Function:
- N-channel MOSFET with 30V drain-source voltage (VDS)
- 58A continuous drain current (ID)
- Low on-resistance (RDS(on) = 1.8mΩ @ 10V)
- Logic-level gate drive (VGS = 4.5V)
- Optimized for high-efficiency power switching (e.g., DC-DC converters, motor control, load switches)
Key features include low gate charge (QG) and fast switching, making it suitable for high-performance applications.

Application

The NVTFS5820NLTAG is a power MOSFET designed for high-efficiency, low-voltage applications. Key application areas include:
1. DC-DC Converters – Used in voltage regulation for portable devices.
2. Load Switching – Efficient power management in smartphones, tablets, and IoT devices.
3. Battery Protection – Safeguards against overcurrent in Li-ion battery packs.
4. Motor Control – Low-power motor drivers in consumer electronics.
5. Power Management ICs (PMICs) – Enhances efficiency in power distribution circuits.
Its low on-resistance (RDS(on)) and compact package make it ideal for space-constrained, energy-sensitive designs.

Package

The NVTFS5820NLTAG is a PowerTrench MOSFET from ON Semiconductor, available in a DFN-5 (5-Pin Dual Flat No-Lead) package. This compact surface-mount package (3.3mm x 3.3mm) offers efficient thermal performance and space-saving design, suitable for high-density applications like power management in portable electronics.

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