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PMV20XNEAR
+BOMMOSFET N-CH 20V 6.3A TO236AB
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Nhà sản xuấtNexperia Hoa Kỳ Inc.
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Ông. Phần #PMV20XNEAR
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Có sẵn4061
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Supplier | Nexperia USA Inc.,Rochester Electronics, LLC |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | Automotive, AEC-Q101 |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain(Id) @ 25°C | 6.3A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 2.5V, 4.5V |
| Rds On(Max) @ Id Vgs | 20mOhm @ 6.3A, 4.5V |
| Vgs(th)(Max) @ Id | 1.25V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 15 nC @ 4.5 V |
| Vgs(Max) | ±12V |
| Input Capacitance(Ciss)(Max) @ Vds | 930 pF @ 10 V |
| Power Dissipation (Max) | 460mW (Ta), 6.94W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-236AB |
Tổng quan
Description
If you need precise numbers (Rds(on) at your gate voltage, Vgs(th), max continuous current, thermal limits, and exact package), consult the latest PMV20XNEAR datasheet and application notes from Nexperia. If you share your target gate drive (Vgs), load current, and packaging constraints, I can help select a suitable variant and estimate losses.
Equivalent
Features
- Logic-level gate drive: fully on around VGS 2.5–4.5 V.
- Low RDS(on): typical ~9 mΩ at VGS=4.5 V; max around 15–20 mΩ at 2.5 V (depends on lot).
- Continuous drain current: several amps (designs vary with ambient and PCB).
- Low gate charge and input capacitance for efficient, fast switching.
- Fast switching performance with low drive energy.
- Intrinsic body diode with rugged switching behavior for protection in switching applications.
- Pb-free, RoHS-compliant.
- Suitable for DC-DC converters, load switches, motor drivers, and other space-constrained power-switching tasks.
Note: Exact numbers (RDS(on), ID, package) vary by lot and revision; consult the latest datasheet for precise specifications.
Pinout
Function: N-channel enhancement-mode MOSFET (G = gate, D = drain, S = source) used as a switching device.
Manufacturer
What kind of company: Nexperia is a global semiconductor company that designs and manufactures discrete components, including power MOSFETs, diodes, and ESD protection devices. It originated from Philips/NXP and is now an independent supplier focused on standard-level and power discrete semiconductors.
Application
- DC–DC converters (buck/boost/buck-boost) and synchronous rectification
- Load switches and protection circuits (reverse-current/ideal-diode paths)
- Motor, fan, and actuator drivers in consumer electronics and small appliances
- Battery-powered devices and power-management subsystems (portable tools, wearables)
- Renewable-energy interfaces (solar charge controllers, energy-harvesting circuits)
In short: compact, efficient low-voltage switching for power management and motor drive needs.