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PSMN2R2-40BS
+BOMNOW NEXPERIA PSMN2R2-40BS - POWE
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Nhà sản xuấtNexperia Hoa Kỳ Inc.
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Ông. Phần #PSMN2R2-40BS
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Bảng dữ liệu PSMN2R2-40BS DataSheet
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Tổng quan
Description
The "2R2" in the name refers to its specific R_DS(on) value, while "40BS" generally denotes certain specifications like voltage ratings or packaging. It is typically offered in industry-standard packages, such as the TO-220, which aids in efficient thermal management. Its robust design enables it to handle significant power while maintaining reliability, making it an attractive component for designers focusing on compactness and energy savings. Always refer to the datasheet for detailed specifications and to ensure compatibility with your application.
Equivalent
1. IRF540N - by International Rectifier/Infineon
2. FDP039N06 - by Fairchild Semiconductor/ON Semiconductor
3. IPP60R199CP - by Infineon Technologies
Ensure to verify the specific parameters like on-resistance, threshold voltage, and package type to confirm compatibility.
Features
1. Voltage Rating: The device typically supports a drain-source voltage (V_DS) of up to 40V.
2. Current Handling: It has a high continuous drain current capability, often specified around 100A.
3. Low On-State Resistance: This MOSFET provides low R_DS(on), which minimizes power loss and heat generation, enhancing efficiency.
4. Fast Switching: It is designed for high-speed switching applications, aiding in the reduction of transition losses.
5. Thermal Management: The package often enables efficient thermal performance, allowing for effective heat dissipation.
6. Applications: Typically used in power management applications, including DC-DC conversion, motor control, and load switching.
7. Enhanced Ruggedness: It offers high avalanche energy capability, providing robustness against voltage spikes.
These features make the PSMN2R2-40BS suitable for high-efficiency, high-power applications in various electronic devices.
Pinout
1. Gate (G): The gate is the control terminal and is responsible for activating the transistor. When voltage is applied to the gate, it allows current to flow between the drain and source.
2. Drain (D): The drain is the terminal where the current flows out. It is connected to the load in a circuit.
3. Source (S): The source is the terminal through which current enters the MOSFET.
4. Tab: Often connected to the drain, the tab serves as both a mechanical support and a thermal path for heat dissipation.
This MOSFET is suited for use in applications like power management, motor control, and DC-DC converters due to its low on-resistance and high efficiency.