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PSMN4R8-100BSEJ
+BOMMOSFET N-CH 100V 120A D2PAK
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Nhà sản xuấtNexperia Hoa Kỳ Inc.
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Ông. Phần #PSMN4R8-100BSEJ
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Bảng dữ liệu PSMN4R8-100BSEJ DataSheet
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Gói TO-263-3
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Có sẵn1808
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 120A (Tj) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 4.8mOhm @ 25A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 1mA |
| Gate Charge(Qg)(Max) @ Vgs | 278 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 14400 pF @ 50 V |
| Power Dissipation (Max) | 405W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK |
Tổng quan
Description
The PSMN4R8-100BSEJ is a specific model of a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in electronic applications. MOSFETs are essential components in modern electronics, acting as switches or amplifiers within circuits. The PSMN4R8-100BSEJ is designed to handle high power, making it suitable for use in power management systems, motor control, and other high-demand applications.
Key features of the PSMN4R8-100BSEJ include low on-resistance, which improves efficiency by minimizing power loss during operation. It also features a robust design for high reliability in demanding environments. Typically, this component would be used in industries such as automotive, industrial automation, and consumer electronics, where efficient and reliable power control is crucial.
Its design caters to applications requiring fast switching capabilities and high power efficiency, contributing to overall energy savings and enhanced performance of the systems in which it is integrated.
Key features of the PSMN4R8-100BSEJ include low on-resistance, which improves efficiency by minimizing power loss during operation. It also features a robust design for high reliability in demanding environments. Typically, this component would be used in industries such as automotive, industrial automation, and consumer electronics, where efficient and reliable power control is crucial.
Its design caters to applications requiring fast switching capabilities and high power efficiency, contributing to overall energy savings and enhanced performance of the systems in which it is integrated.
Equivalent
The PSMN4R8-100BSEJ is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) from Nexperia. Equivalent products would typically come from other manufacturers offering similar specifications. Some potential equivalents include:
1. Infineon BSC010N04LS: Offers similar voltage and current ratings.
2. STMicroelectronics STP80NF10: A comparable N-channel MOSFET.
3. Vishay SiHP10N100E: Offers similar performance characteristics.
Always verify detailed specifications to ensure compatibility.
1. Infineon BSC010N04LS: Offers similar voltage and current ratings.
2. STMicroelectronics STP80NF10: A comparable N-channel MOSFET.
3. Vishay SiHP10N100E: Offers similar performance characteristics.
Always verify detailed specifications to ensure compatibility.
Features
The PSMN4R8-100BSEJ is a N-channel MOSFET typically used in electronic devices for switching and amplification purposes. Key features include:
1. Voltage Rating: It can handle a drain-source voltage up to 100V.
2. Current Rating: The device supports a continuous drain current typically around 100A, depending on the model and cooling conditions.
3. Low On-State Resistance: The MOSFET features a very low R_DS(on), which minimizes power loss and improves efficiency.
4. Package Type: It often comes in a standard power MOSFET package suitable for surface mounting, such as D2PAK or TO-220.
5. Thermal Performance: Good thermal characteristics enable it to operate efficiently under high-power conditions.
6. Fast Switching: Designed for fast switching speeds, which enhances performance in high-frequency applications.
7. Applications: Commonly used in power management, motor control, DC-DC converters, and various other high-power electronic applications.
These attributes make the PSMN4R8-100BSEJ a reliable choice for designers seeking efficiency and performance in power electronic circuits.
1. Voltage Rating: It can handle a drain-source voltage up to 100V.
2. Current Rating: The device supports a continuous drain current typically around 100A, depending on the model and cooling conditions.
3. Low On-State Resistance: The MOSFET features a very low R_DS(on), which minimizes power loss and improves efficiency.
4. Package Type: It often comes in a standard power MOSFET package suitable for surface mounting, such as D2PAK or TO-220.
5. Thermal Performance: Good thermal characteristics enable it to operate efficiently under high-power conditions.
6. Fast Switching: Designed for fast switching speeds, which enhances performance in high-frequency applications.
7. Applications: Commonly used in power management, motor control, DC-DC converters, and various other high-power electronic applications.
These attributes make the PSMN4R8-100BSEJ a reliable choice for designers seeking efficiency and performance in power electronic circuits.
Pinout
The PSMN4R8-100BSEJ is a N-channel MOSFET produced by Nexperia. It comes in a TO-220 package format, which typically features three pins. The pin configuration for this MOSFET is as follows:
1. Gate (G): This is the control pin that modulates the conductivity between the drain and source. It receives the input signal that allows the MOSFET to switch on or off.
2. Drain (D): This is the terminal where the current flows out when the device is in the "on" state. It is connected to the load within the circuit.
3. Source (S): This is the terminal where the current enters the MOSFET. It serves as the reference point for the gate voltage.
The PSMN4R8-100BSEJ is designed for high-efficiency switching applications, offering low on-resistance and high-speed switching performance, making it suitable for power management and other high-current applications.
1. Gate (G): This is the control pin that modulates the conductivity between the drain and source. It receives the input signal that allows the MOSFET to switch on or off.
2. Drain (D): This is the terminal where the current flows out when the device is in the "on" state. It is connected to the load within the circuit.
3. Source (S): This is the terminal where the current enters the MOSFET. It serves as the reference point for the gate voltage.
The PSMN4R8-100BSEJ is designed for high-efficiency switching applications, offering low on-resistance and high-speed switching performance, making it suitable for power management and other high-current applications.
Manufacturer
The PSMN4R8-100BSEJ is manufactured by Nexperia. Nexperia is a global semiconductor company that specializes in the production of discrete and power semiconductor components. The company is known for providing a wide range of products, including MOSFETs, bipolar transistors, diodes, and ESD protection devices. Nexperia is recognized for its focus on efficiency and quality, catering to various sectors such as automotive, industrial, computing, and consumer electronics. Originally part of NXP Semiconductors, Nexperia became an independent entity in 2017 and has since been dedicated to innovation and meeting the growing demands of the semiconductor industry.
Application
The PSMN4R8-100BSEJ is a N-channel MOSFET commonly used in applications requiring efficient power management and switching. Key application areas include:
1. Power Supply Units: Used for efficient voltage regulation and power conversion.
2. Motor Drives: Ideal for controlling motor speed and direction in industrial and consumer electronics.
3. LED Lighting: Used in dimming circuits and to improve power efficiency.
4. Inverters: Key component in DC-AC conversion, often used in solar inverters.
5. Battery Management Systems: Helps optimize charging and discharging cycles in battery-powered devices.
6. Consumer Electronics: Used in devices requiring efficient power control and management.
These applications leverage the MOSFET's capabilities for high-speed switching and low on-resistance.
1. Power Supply Units: Used for efficient voltage regulation and power conversion.
2. Motor Drives: Ideal for controlling motor speed and direction in industrial and consumer electronics.
3. LED Lighting: Used in dimming circuits and to improve power efficiency.
4. Inverters: Key component in DC-AC conversion, often used in solar inverters.
5. Battery Management Systems: Helps optimize charging and discharging cycles in battery-powered devices.
6. Consumer Electronics: Used in devices requiring efficient power control and management.
These applications leverage the MOSFET's capabilities for high-speed switching and low on-resistance.
Package
The package type for the PSMN4R8-100BSEJ is a high-performance LFPAK56 (Power-SO8), commonly used in power management and electronic applications for its compact size and efficient thermal management capabilities.
