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RUM002N05T2L
+BOMMOSFET N-CH 50V 200MA VMT3
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Nhà sản xuấtBán dẫn Rohm
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Ông. Phần #RUM002N05T2L
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Bảng dữ liệu RUM002N05T2L DataSheet
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Part Status | Active |
| Base Product Number | RUM002 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 50 V |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V |
| Rds On (Max) @ Id, Vgs | 2.2Ohm @ 200mA, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 25 pF @ 10 V |
| Power Dissipation (Max) | 150mW (Ta) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | VMT3 |
| Package | SOT-723 |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
Tổng quan
Description
To understand what this course entails, you would typically need to refer to the course catalog or syllabus provided by the institution offering it. Generally, an introductory course aims to provide foundational knowledge and skills related to a specific topic. It may cover key concepts, theories, methodologies, and practical applications, serving as a prerequisite for more advanced studies in the subject.
If "RUM002N05T2L" is a part of a structured academic program, it would be beneficial to contact the academic advisor or department for detailed information. They can provide insights into course objectives, learning outcomes, assessment methods, and any materials or resources you might need.
Equivalent
1. IRLZ44N from Infineon Technologies
2. FQP30N06L from ON Semiconductor
3. NTD4906N from ON Semiconductor
Always verify the datasheet specifications to ensure compatibility for your specific application.
Features
1. Low On-Resistance: It offers a low on-state resistance, which minimizes power loss and improves efficiency.
2. High-Speed Switching: The MOSFET is designed for fast switching speeds, suitable for high-frequency applications.
3. Compact Package: Often available in compact surface-mount packages, facilitating design in small form factor devices.
4. Thermal Performance: It has good thermal performance, allowing it to handle higher power levels without overheating.
5. Voltage Rating: It generally supports a specific drain-source voltage rating, ensuring suitability for various applications.
6. Current Handling: The device can handle substantial current, making it suitable for driving medium to high power loads.
7. ESD Protection: Some variants may include built-in electrostatic discharge (ESD) protection for enhanced reliability.
These features make the RUM002N05T2L suitable for applications like power management, DC-DC converters, and motor control circuits. Always refer to the specific datasheet for precise specifications and capabilities.
Pinout
1. Gate (G): This pin is used to control the conductivity between the drain and source. By applying a voltage to the gate, the MOSFET is turned on or off.
2. Source (S): This is the terminal through which the charge carriers enter the MOSFET. In N-channel MOSFETs, it is typically connected to the negative side of the power supply.
3. Drain (D): This pin acts as the output terminal where the load is connected. Charge carriers exit the MOSFET through this terminal when the device is turned on.
The RUM002N05T2L is designed for switching applications due to its efficient switching capabilities and low on-resistance, making it suitable for various power management tasks in electronic circuits.