RUM002N05T2L

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RUM002N05T2L

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MOSFET N-CH 50V 200MA VMT3

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Thông số kỹ thuật

thuộc tính Giá trị
Part Status Active
Base Product Number RUM002
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V
Current - Continuous Drain (Id) @ 25°C 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Rds On (Max) @ Id, Vgs 2.2Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 25 pF @ 10 V
Power Dissipation (Max) 150mW (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package VMT3
Package SOT-723
Packaging Cut Tape (CT), Tape & Reel (TR)

Tổng quan

Description

"Introduction to RUM002N05T2L" likely refers to a specific course or module code within an academic institution. Without specific details about the course content, the title suggests it could be related to a particular subject or field of study.
To understand what this course entails, you would typically need to refer to the course catalog or syllabus provided by the institution offering it. Generally, an introductory course aims to provide foundational knowledge and skills related to a specific topic. It may cover key concepts, theories, methodologies, and practical applications, serving as a prerequisite for more advanced studies in the subject.
If "RUM002N05T2L" is a part of a structured academic program, it would be beneficial to contact the academic advisor or department for detailed information. They can provide insights into course objectives, learning outcomes, assessment methods, and any materials or resources you might need.

Equivalent

The RUM002N05T2L is a MOSFET manufactured by Rohm Semiconductor. Equivalent products typically include MOSFETs with similar voltage ratings, current ratings, and package types from other manufacturers. Some potential equivalent products might be:
1. IRLZ44N from Infineon Technologies
2. FQP30N06L from ON Semiconductor
3. NTD4906N from ON Semiconductor
Always verify the datasheet specifications to ensure compatibility for your specific application.

Features

The RUM002N05T2L is a type of N-channel MOSFET transistor, commonly used for switching and amplification in electronic circuits. Key features typically include:
1. Low On-Resistance: It offers a low on-state resistance, which minimizes power loss and improves efficiency.
2. High-Speed Switching: The MOSFET is designed for fast switching speeds, suitable for high-frequency applications.
3. Compact Package: Often available in compact surface-mount packages, facilitating design in small form factor devices.
4. Thermal Performance: It has good thermal performance, allowing it to handle higher power levels without overheating.
5. Voltage Rating: It generally supports a specific drain-source voltage rating, ensuring suitability for various applications.
6. Current Handling: The device can handle substantial current, making it suitable for driving medium to high power loads.
7. ESD Protection: Some variants may include built-in electrostatic discharge (ESD) protection for enhanced reliability.
These features make the RUM002N05T2L suitable for applications like power management, DC-DC converters, and motor control circuits. Always refer to the specific datasheet for precise specifications and capabilities.

Pinout

The RUM002N05T2L is a semiconductor device that typically comes in a SOT-23 package and functions as an N-channel MOSFET. It generally has 3 pins. Here are the pin functions:
1. Gate (G): This pin is used to control the conductivity between the drain and source. By applying a voltage to the gate, the MOSFET is turned on or off.
2. Source (S): This is the terminal through which the charge carriers enter the MOSFET. In N-channel MOSFETs, it is typically connected to the negative side of the power supply.
3. Drain (D): This pin acts as the output terminal where the load is connected. Charge carriers exit the MOSFET through this terminal when the device is turned on.
The RUM002N05T2L is designed for switching applications due to its efficient switching capabilities and low on-resistance, making it suitable for various power management tasks in electronic circuits.

Manufacturer

The RUM002N05T2L is manufactured by Rohm Semiconductor. Rohm Semiconductor is a Japanese company that specializes in the design and production of electronic components and semiconductor devices. The company produces a wide range of products, including integrated circuits (ICs), diodes, transistors, and other electronic components that are essential in various applications across multiple industries, such as automotive, consumer electronics, telecommunications, and industrial equipment. Rohm is known for its innovation and focus on quality, providing solutions that enhance the performance and efficiency of electronic devices.

Application

The RUM002N05T2L is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in various applications due to its efficiency and performance. Its primary application areas include power management systems, DC-DC converters, load switching, and low-power motor drives. It is also utilized in battery-powered devices and power supply circuits due to its low on-resistance and high switching speed, making it suitable for improving energy efficiency and thermal performance in electronic devices.

Package

The RUM002N05T2L is a MOSFET transistor from Toshiba, typically housed in a surface-mount package, specifically the SOT-23 package. This package type is compact and widely used for small-scale or portable electronic devices, providing reliability and efficiency in power management applications.

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