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S29GL01GP12TFI010
+BOMIC FLASH 1GBIT PARALLEL 56TSOP
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Nhà sản xuấtCông ty bán dẫn Cypress
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Ông. Phần #S29GL01GP12TFI010
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Bảng dữ liệu S29GL01GP12TFI010 DataSheet
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Series | GL-P |
| Part Status | Obsolete |
| Digi Key Programmable | Not Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 1Gbit |
| Memory Organization | 128M x 8 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 120ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 56-TFSOP (0.724", 18.40mm Width) |
| Supplier Device Package | 56-TSOP |
| Base Product Number | S29GL01 |
| Access Time | 120 ns |
Tổng quan
Description
The device features a 3.0-volt single power supply operation, with a storage capacity of 1 Gbit. It supports a wide temperature range, making it versatile for different environmental conditions. The S29GL01GP12TFI010 provides efficient data management with its support for simultaneous Read/Write operations. Additionally, it includes advanced security features like block protection and a robust command set, ensuring data integrity and protection against unauthorized access.
Overall, this NOR Flash memory product is known for its reliability, speed, and adaptability, positioning it as a solid choice for applications requiring durable and efficient non-volatile memory solutions.
Equivalent
Features
Key features of the S29GL01GP12TFI010 include:
1. Density: 1 Gb (Gigabit).
2. Architecture: Uniform 128 KB sectors for efficient storage and retrieval.
3. Interface: Parallel NOR Flash with asynchronous read capability.
4. Speed: Access times as fast as 90 ns.
5. Endurance: Supports a high number of erase/program cycles typically in the range of 100,000.
6. Temperature Range: Industrial temperature range from -40°C to +85°C, making it suitable for harsh environments.
7. Voltage: Operates at 3.0V to 3.6V for read, program, and erase operations.
8. Security: Features such as 256-bit protection registers for security purposes.
9. Packaging: Available in TSOP (Thin Small Outline Package) and BGA (Ball Grid Array) for flexibility in design.
These features make the S29GL01GP12TFI010 well-suited for applications requiring reliable, high-density, non-volatile storage.
Pinout
Its primary function is to provide non-volatile storage, meaning it retains data even when the power is turned off. This particular model offers a 1 Gbit (128 MByte) storage capacity. The device supports a parallel NOR flash interface and is typically used in embedded systems, consumer electronics, and various industrial applications.
The S29GL01GP series includes features such as fast read access times, sector erase capabilities, and a deep power-down mode to conserve power, making it suitable for applications where speed and power efficiency are critical. Additionally, it supports common flash interface (CFI) for easy integration and adaptability with various devices.
Manufacturer
Infineon Technologies is known for its expertise in developing semiconductors that enable efficient energy management, secure communications, and seamless mobility. The company operates in various sectors, including automotive, industrial, consumer electronics, and security technologies. Infineon's products are integral to a variety of applications, from electric vehicles and renewable energy to smart devices and Internet of Things (IoT) solutions.
Application
1. Embedded Systems: Used in firmware storage for automotive, industrial, and consumer electronics.
2. Telecommunications: Supports systems requiring frequent updates and high reliability, such as routers and switches.
3. Networking Equipment: Stores boot code and configuration data.
4. Consumer Electronics: Used in devices like smart TVs and set-top boxes for application storage.
5. Medical Devices: Provides reliable data storage and firmware integrity.
6. Aerospace and Defense: Offers high endurance and data retention for critical systems.
Its features, such as high-speed read and write capabilities, make it suitable for applications needing reliable non-volatile memory.