SCT3120ALGC11

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SCT3120ALGC11

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SICFET N-CH 650V 21A TO247N

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Thông số kỹ thuật

thuộc tính Giá trị
Package Tube
ProductStatus Active
FETType N-Channel
Technology SiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss) 650 V
Current-ContinuousDrain(Id)@25°C 21A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 18V
RdsOn(Max)@IdVgs 156mOhm @ 6.7A, 18V
Vgs(th)(Max)@Id 5.6V @ 3.33mA
GateCharge(Qg)(Max)@Vgs 38 nC @ 18 V
Vgs(Max) +22V, -4V
InputCapacitance(Ciss)(Max)@Vds 460 pF @ 500 V
PowerDissipation(Max) 103W (Tc)
OperatingTemperature 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247N

Tổng quan

Description

The SCT3120ALGC11 is a high-performance N-channel MOSFET designed for power management applications. Key features include:
- Low On-Resistance (RDS(on)): Enhances efficiency by minimizing power loss.
- High Current Handling: Suitable for demanding loads (up to 100A).
- Fast Switching: Optimized for high-frequency circuits (e.g., DC-DC converters, motor drives).
- Robust Protection: Built-in ESD and thermal safeguards.
Common uses include switching regulators, battery management, and automotive systems. Its compact TO-263-7L package ensures efficient thermal dissipation.
For detailed specs, refer to the datasheet.

Features

The SCT3120ALGC11 is a silicon carbide (SiC) MOSFET with the following key features:
- Voltage Rating: 1200V
- Current Rating: 27A (continuous)
- Low On-Resistance: 80mΩ (typ.)
- Fast Switching: Optimized for high-frequency applications
- High Temperature Operation: Up to 175°C
- Low Gate Charge (Qg): Enhances efficiency
- Avalanche Energy Rated: Robust against voltage spikes
- Package: TO-247-3 (through-hole)
- Applications: EV chargers, solar inverters, industrial power supplies
This MOSFET offers high efficiency, thermal stability, and reliability in high-voltage systems.

Pinout

The SCT3120ALGC11 is a 650V, 20A silicon carbide (SiC) MOSFET in a TO-247-3L package, featuring 3 pins with the following functions:
1. Gate (G) – Controls the switching operation.
2. Drain (D) – High-voltage terminal, connected to the load.
3. Source (S) – Ground/reference terminal.
This MOSFET is optimized for high-efficiency, high-frequency applications like power supplies, EV chargers, and solar inverters, leveraging SiC technology for low conduction losses and fast switching.

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