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SI2323DS-T1-GE3
+BOMMOSFET P-CH 20V 3.7A SOT23-3
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Nhà sản xuấtSản phẩm Vishay Siliconix
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Ông. Phần #SI2323DS-T1-GE3
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Bảng dữ liệu SI2323DS-T1-GE3 DataSheet
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Series | TrenchFET® |
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 3.7A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 4.7A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 4.5 V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 1020 pF @ 10 V |
| Power Dissipation (Max) | 750mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Base Product Number | SI2323 |
Tổng quan
Description
The SI2323DS-T1-GE3 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient power management applications. It features a maximum drain-source voltage (VDS) of 30V and a continuous drain current (ID) of up to 11A, making it suitable for applications such as load switching and DC-DC converters.
Key specifications include a low RDS(on) value, which minimizes conduction losses and enhances efficiency. The device is housed in a compact SOT-23 package, facilitating easy integration into circuit designs while saving board space. The SI2323DS-T1-GE3 is optimized for low gate charge requirements, allowing for faster switching speeds and reduced power loss during operation.
This MOSFET is widely used in various applications, including consumer electronics, automotive systems, and industrial equipment. Its reliable performance and thermal stability make it a popular choice for designers looking to improve the efficiency and reliability of their power management solutions.
Key specifications include a low RDS(on) value, which minimizes conduction losses and enhances efficiency. The device is housed in a compact SOT-23 package, facilitating easy integration into circuit designs while saving board space. The SI2323DS-T1-GE3 is optimized for low gate charge requirements, allowing for faster switching speeds and reduced power loss during operation.
This MOSFET is widely used in various applications, including consumer electronics, automotive systems, and industrial equipment. Its reliable performance and thermal stability make it a popular choice for designers looking to improve the efficiency and reliability of their power management solutions.
Equivalent
The SI2323DS-T1-GE3 is a dual N-channel MOSFET. Equivalent products include the AO3400, BSS138, and IRLML2502. Always check the specific parameters like voltage, current rating, and package type to ensure compatibility for your application.
Features
The SI2323DS-T1-GE3 is a dual N-channel MOSFET designed for efficient switching applications. Key features include:
1. Dual Configuration: Contains two N-channel MOSFETs in a single package, providing space-saving and cost-effective solutions.
2. Low On-Resistance: Offers low R_DS(on) values, which reduce power loss and improve efficiency in applications such as power management and DC-DC converters.
3. High Current Capability: Supports high continuous drain current, making it suitable for demanding applications.
4. Wide Voltage Range: Operates effectively within a broad range of gate-source voltages (V_GS), enhancing flexibility in circuit design.
5. Fast Switching Speed: Facilitates rapid switching, which is ideal for high-frequency applications.
6. Thermal Performance: Features a compact package design that aids in heat dissipation.
7. RoHS Compliant: Meets environmental standards, ensuring safe use in various applications.
The SI2323DS-T1-GE3 is widely used in power supplies, motor control, and other electronic devices requiring efficient switching performance.
1. Dual Configuration: Contains two N-channel MOSFETs in a single package, providing space-saving and cost-effective solutions.
2. Low On-Resistance: Offers low R_DS(on) values, which reduce power loss and improve efficiency in applications such as power management and DC-DC converters.
3. High Current Capability: Supports high continuous drain current, making it suitable for demanding applications.
4. Wide Voltage Range: Operates effectively within a broad range of gate-source voltages (V_GS), enhancing flexibility in circuit design.
5. Fast Switching Speed: Facilitates rapid switching, which is ideal for high-frequency applications.
6. Thermal Performance: Features a compact package design that aids in heat dissipation.
7. RoHS Compliant: Meets environmental standards, ensuring safe use in various applications.
The SI2323DS-T1-GE3 is widely used in power supplies, motor control, and other electronic devices requiring efficient switching performance.
Pinout
The SI2323DS-T1-GE3 is a dual N-channel MOSFET with a pin count of 8. It features a compact, surface-mount package (SO-8) and is designed for high-speed switching applications.
Pin Functions:
1. Gate1 (G1): Controls the first N-channel MOSFET.
2. Source1 (S1): Source terminal for the first MOSFET.
3. Drain1 (D1): Drain terminal for the first MOSFET.
4. Gate2 (G2): Controls the second N-channel MOSFET.
5. Source2 (S2): Source terminal for the second MOSFET.
6. Drain2 (D2): Drain terminal for the second MOSFET.
7. Drain1 (D1): Common drain for both FETs, used for output.
8. Source2 (S2): Common source for both FETs.
The SI2323DS-T1-GE3 is suitable for applications in power management, motor control, and load switching due to its low on-resistance and high-speed performance.
Pin Functions:
1. Gate1 (G1): Controls the first N-channel MOSFET.
2. Source1 (S1): Source terminal for the first MOSFET.
3. Drain1 (D1): Drain terminal for the first MOSFET.
4. Gate2 (G2): Controls the second N-channel MOSFET.
5. Source2 (S2): Source terminal for the second MOSFET.
6. Drain2 (D2): Drain terminal for the second MOSFET.
7. Drain1 (D1): Common drain for both FETs, used for output.
8. Source2 (S2): Common source for both FETs.
The SI2323DS-T1-GE3 is suitable for applications in power management, motor control, and load switching due to its low on-resistance and high-speed performance.
Manufacturer
The manufacturer of the SI2323DS-T1-GE3 is Vishay Intertechnology, Inc. Vishay is a global leader in the manufacturing of discrete semiconductors and passive electronic components. Founded in 1962, the company is headquartered in Malvern, Pennsylvania, USA. Vishay specializes in a wide range of products, including resistors, capacitors, inductors, and a variety of semiconductor devices, such as diodes, transistors, and integrated circuits.
The SI2323DS-T1-GE3 is specifically a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for applications requiring efficient power management, such as in power supplies and battery management systems. Vishay serves diverse markets, including automotive, industrial, telecommunications, and consumer electronics, emphasizing innovation and quality in its product offerings. The company's global presence and extensive manufacturing capabilities make it a key player in the electronics component industry.
The SI2323DS-T1-GE3 is specifically a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for applications requiring efficient power management, such as in power supplies and battery management systems. Vishay serves diverse markets, including automotive, industrial, telecommunications, and consumer electronics, emphasizing innovation and quality in its product offerings. The company's global presence and extensive manufacturing capabilities make it a key player in the electronics component industry.
Application
The SI2323DS-T1-GE3 is a dual N-channel MOSFET primarily used in power management applications. Its key application areas include:
1. DC-DC Converters: Utilized in step-down and boost converter circuits for efficient voltage regulation.
2. Load Switching: Ideal for controlling power to devices in consumer electronics and industrial applications.
3. Power Amplifiers: Employed in RF applications for signal amplification.
4. Battery Management Systems: Used in charging and discharging circuits in battery-operated devices.
5. Motor Control: Suitable for driving motors in robotics and automotive applications.
Its low on-resistance and high-speed switching capabilities make it versatile across these domains.
1. DC-DC Converters: Utilized in step-down and boost converter circuits for efficient voltage regulation.
2. Load Switching: Ideal for controlling power to devices in consumer electronics and industrial applications.
3. Power Amplifiers: Employed in RF applications for signal amplification.
4. Battery Management Systems: Used in charging and discharging circuits in battery-operated devices.
5. Motor Control: Suitable for driving motors in robotics and automotive applications.
Its low on-resistance and high-speed switching capabilities make it versatile across these domains.
Package
The SI2323DS-T1-GE3 is packaged in a 5-pin SOT-23 surface mount package.
