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SI2333CDS-T1-E3
+BOMMOSFET P-CH 12V 7.1A SOT23-3
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Nhà sản xuấtSản phẩm Vishay Siliconix
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Ông. Phần #SI2333CDS-T1-E3
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Bảng dữ liệu SI2333CDS-T1-E3 DataSheet
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 12 V |
| Current - Continuous Drain (Id) @ 25°C | 7.1A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 5.1A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 4.5 V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 1225 pF @ 6 V |
| Power Dissipation (Max) | 1.25W (Ta), 2.5W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Base Product Number | SI2333 |
Tổng quan
Description
The SI2333CDS-T1-E3 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for low-voltage applications. It features a low on-resistance, making it suitable for efficient power management in various electronic devices. This N-channel MOSFET can handle high current loads, typically up to 30A, with a maximum drain-source voltage of 30V.
Key specifications include a low threshold voltage, fast switching speeds, and a compact package, often in a surface-mount format like SO-8, which facilitates integration into space-constrained designs. Its characteristics make it ideal for use in power supplies, battery management systems, and motor control applications.
The SI2333CDS-T1-E3 is designed for durability and reliability, with thermal protection features that prevent overheating. Overall, it provides an effective solution for engineers seeking high performance in their circuit designs while maintaining energy efficiency.
Key specifications include a low threshold voltage, fast switching speeds, and a compact package, often in a surface-mount format like SO-8, which facilitates integration into space-constrained designs. Its characteristics make it ideal for use in power supplies, battery management systems, and motor control applications.
The SI2333CDS-T1-E3 is designed for durability and reliability, with thermal protection features that prevent overheating. Overall, it provides an effective solution for engineers seeking high performance in their circuit designs while maintaining energy efficiency.
Equivalent
Equivalent products to the SI2333CDS-T1-E3 include the AO3400, BSS138, and 2N7000 MOSFETs. These components share similar specifications in terms of voltage rating, current handling, and package type, making them suitable substitutes in various applications. Always verify specific parameters to ensure compatibility in your design.
Features
The SI2333CDS-T1-E3 is an N-channel MOSFET designed for low-voltage applications, featuring a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of up to 9A. It offers low on-resistance (R_DS(on)), typically around 14 mΩ at 10V gate drive, which enhances efficiency by minimizing power loss during operation. The device has a fast switching capability, making it suitable for high-speed applications such as power management and DC-DC converters.
It comes in a compact SOIC-8 package, facilitating easy integration into various circuits. The MOSFET's gate threshold voltage (V_GS(th)) ranges from 1 to 2.5V, allowing operation with low gate drive voltages. Additionally, it has a robust thermal performance with a maximum junction temperature of 150°C, ensuring reliability in demanding environments. Overall, the SI2333CDS-T1-E3 is ideal for applications requiring high efficiency and compact design.
It comes in a compact SOIC-8 package, facilitating easy integration into various circuits. The MOSFET's gate threshold voltage (V_GS(th)) ranges from 1 to 2.5V, allowing operation with low gate drive voltages. Additionally, it has a robust thermal performance with a maximum junction temperature of 150°C, ensuring reliability in demanding environments. Overall, the SI2333CDS-T1-E3 is ideal for applications requiring high efficiency and compact design.
Pinout
The SI2333CDS-T1-E3 is a N-channel MOSFET with a pin count of 8. The device is primarily used for switching and amplification applications in power management.
### Pin Configuration:
1. Gate - Controls the MOSFET's on/off state.
2. Source - The terminal through which current enters the MOSFET.
3. Drain - The terminal through which current exits the MOSFET.
4. Gate - (duplicate) Provides control voltage.
5. Source - (duplicate) Common reference point for the circuit.
6. Drain - (duplicate) Used for load connection.
7. D/S - Drain/Source - provides additional electrical connection.
8. D/S - (duplicate) - provides another electrical connection for layout flexibility.
### Key Functions:
- Acts as a switch to control power delivery.
- Enables low-voltage applications with efficient current handling.
- Suitable for use in low-voltage, high-speed applications.
Overall, the SI2333CDS-T1-E3 is designed for efficient performance in compact electronic designs.
### Pin Configuration:
1. Gate - Controls the MOSFET's on/off state.
2. Source - The terminal through which current enters the MOSFET.
3. Drain - The terminal through which current exits the MOSFET.
4. Gate - (duplicate) Provides control voltage.
5. Source - (duplicate) Common reference point for the circuit.
6. Drain - (duplicate) Used for load connection.
7. D/S - Drain/Source - provides additional electrical connection.
8. D/S - (duplicate) - provides another electrical connection for layout flexibility.
### Key Functions:
- Acts as a switch to control power delivery.
- Enables low-voltage applications with efficient current handling.
- Suitable for use in low-voltage, high-speed applications.
Overall, the SI2333CDS-T1-E3 is designed for efficient performance in compact electronic designs.
Manufacturer
The SI2333CDS-T1-E3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global leader in the electronics industry, specializing in the design and production of a wide range of discrete semiconductors and passive electronic components. The company provides products that are essential for various applications, including automotive, industrial, computing, consumer electronics, and telecommunications.
Founded in 1962, Vishay has established a reputation for innovation and quality, offering a broad portfolio that includes MOSFETs, diodes, capacitors, resistors, and inductors. They focus on advanced technology solutions that meet the needs of modern electronic systems, emphasizing reliability and performance. Vishay's commitment to research and development, along with its extensive manufacturing capabilities, has positioned it as a key player in the global electronics market.
Founded in 1962, Vishay has established a reputation for innovation and quality, offering a broad portfolio that includes MOSFETs, diodes, capacitors, resistors, and inductors. They focus on advanced technology solutions that meet the needs of modern electronic systems, emphasizing reliability and performance. Vishay's commitment to research and development, along with its extensive manufacturing capabilities, has positioned it as a key player in the global electronics market.
Application
The SI2333CDS-T1-E3 is a N-channel MOSFET primarily used in applications such as:
1. Power Management: Efficient switching in DC-DC converters, power supplies, and battery management systems.
2. Load Switching: Control of loads in consumer electronics, industrial equipment, and automotive applications.
3. Motor Control: Driving small motors in robotics and appliances.
4. Signal Switching: Used in RF amplification and switching circuits.
5. LED Drivers: Providing high efficiency in LED lighting applications.
Its low on-resistance and fast switching speeds make it suitable for various high-efficiency power applications.
1. Power Management: Efficient switching in DC-DC converters, power supplies, and battery management systems.
2. Load Switching: Control of loads in consumer electronics, industrial equipment, and automotive applications.
3. Motor Control: Driving small motors in robotics and appliances.
4. Signal Switching: Used in RF amplification and switching circuits.
5. LED Drivers: Providing high efficiency in LED lighting applications.
Its low on-resistance and fast switching speeds make it suitable for various high-efficiency power applications.
Package
The SI2333CDS-T1-E3 is offered in a SOT-23 package type. This surface-mount package is compact, typically used for low-power applications in electronics.
