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SI4866DY-T1-E3
+BOMMOSFET N-CH 12V 11A 8SO
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Nhà sản xuấtSản phẩm Vishay Siliconix
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Ông. Phần #SI4866DY-T1-E3
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Bảng dữ liệu SI4866DY-T1-E3 DataSheet
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Gói SOIC-8
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Có sẵn6248
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 12 V |
| Current - Continuous Drain(Id) @ 25°C | 11A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 2.5V, 4.5V |
| Rds On(Max) @ Id Vgs | 5.5mOhm @ 17A, 4.5V |
| Vgs(th)(Max) @ Id | 600mV @ 250µA (Min) |
| Gate Charge(Qg)(Max) @ Vgs | 30 nC @ 4.5 V |
| Vgs(Max) | ±8V |
| Power Dissipation (Max) | 1.6W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
Tổng quan
Description
The SI4866DY-T1-E3 is a specific model of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Vishay Intertechnology. This component is primarily used in electronic circuits for switching and amplification purposes. It is a part of the TrenchFET Gen III series, known for its high efficiency and low on-resistance, leading to reduced power loss and improved performance in various applications.
Key characteristics of the SI4866DY-T1-E3 include:
1. N-Channel MOSFET: It is designed for use in applications that require N-channel enhancement mode FETs.
2. Low On-Resistance: Offers lower resistance when in the 'on' state, reducing power consumption and heat generation.
3. High-Speed Switching: Suitable for applications requiring rapid on/off cycling.
4. SOT-23 Package: Compact surface-mount package that is ideal for space-constrained designs.
5. Applications: Commonly used in power management, DC-DC converters, load switching, and power supplies.
This MOSFET is favored for its reliability and efficiency, making it a popular choice in various industrial and consumer electronics.
Key characteristics of the SI4866DY-T1-E3 include:
1. N-Channel MOSFET: It is designed for use in applications that require N-channel enhancement mode FETs.
2. Low On-Resistance: Offers lower resistance when in the 'on' state, reducing power consumption and heat generation.
3. High-Speed Switching: Suitable for applications requiring rapid on/off cycling.
4. SOT-23 Package: Compact surface-mount package that is ideal for space-constrained designs.
5. Applications: Commonly used in power management, DC-DC converters, load switching, and power supplies.
This MOSFET is favored for its reliability and efficiency, making it a popular choice in various industrial and consumer electronics.
Equivalent
The SI4866DY-T1-E3 is an N-channel MOSFET. Equivalent products include the IRF530 from International Rectifier, the FQP27P06 from ON Semiconductor, and the STP55NF06 from STMicroelectronics. These components should be cross-referenced for matching electrical and thermal characteristics, as well as package compatibility, to ensure proper equivalency.
Features
The SI4866DY-T1-E3 is a MOSFET transistor manufactured by Vishay. It features N-channel technology designed for fast switching and low on-resistance, making it suitable for various applications like power management, load switching, and DC-DC converters. Key specifications include:
1. Voltage and Current Ratings: The device typically supports a drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of up to 10A.
2. On-Resistance: It offers a low on-resistance (R_DS(on)) of approximately 0.025 ohms, minimizing power loss and increasing efficiency in electronic circuits.
3. Package: The MOSFET is available in a compact SO-8 package, which is beneficial for space-constrained applications.
4. Thermal Performance: It provides efficient thermal management, allowing for operation in high-temperature environments.
5. Applications: Commonly used in power management systems, motor drivers, and other applications requiring efficient switching.
The SI4866DY-T1-E3 combines high-speed performance with robust voltage and current handling capabilities, making it a versatile choice for modern electronic designs.
1. Voltage and Current Ratings: The device typically supports a drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of up to 10A.
2. On-Resistance: It offers a low on-resistance (R_DS(on)) of approximately 0.025 ohms, minimizing power loss and increasing efficiency in electronic circuits.
3. Package: The MOSFET is available in a compact SO-8 package, which is beneficial for space-constrained applications.
4. Thermal Performance: It provides efficient thermal management, allowing for operation in high-temperature environments.
5. Applications: Commonly used in power management systems, motor drivers, and other applications requiring efficient switching.
The SI4866DY-T1-E3 combines high-speed performance with robust voltage and current handling capabilities, making it a versatile choice for modern electronic designs.
Pinout
The SI4866DY-T1-E3 is a P-channel MOSFET manufactured by Vishay Siliconix. It typically comes in a standard SO-8 package, which features eight pins. The primary function of the SI4866DY-T1-E3 is to serve as a switch or amplifier in electronic circuits, utilizing its P-channel enhancement mode for operation.
Key specifications include:
- Type: P-Channel MOSFET
- Package: SO-8 with 8 pins
- Function: Used for switching and amplification purposes in various applications such as power management, load switching, and DC-DC converters.
The SO-8 package layout generally includes three source pins, three drain pins, and two gate pins, although the specific configuration may vary. It is essential to consult the datasheet for the exact pin configuration and electrical characteristics to ensure proper implementation in your circuit design.
Key specifications include:
- Type: P-Channel MOSFET
- Package: SO-8 with 8 pins
- Function: Used for switching and amplification purposes in various applications such as power management, load switching, and DC-DC converters.
The SO-8 package layout generally includes three source pins, three drain pins, and two gate pins, although the specific configuration may vary. It is essential to consult the datasheet for the exact pin configuration and electrical characteristics to ensure proper implementation in your circuit design.
Manufacturer
The SI4866DY-T1-E3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global company that specializes in the manufacturing of discrete semiconductors and passive electronic components. The company's product portfolio includes a wide range of products such as diodes, MOSFETs, optoelectronics, resistors, inductors, and capacitors. Vishay serves various industries, including automotive, industrial, computing, consumer electronics, telecommunications, military, aerospace, and medical markets. The company is known for its innovation and quality, providing components essential for electronic circuitry.
Application
The SI4866DY-T1-E3 is a MOSFET that is typically used in various power management applications. Its primary applications include power conversion, load switching, and motor control in electronic devices. It is suitable for use in consumer electronics, telecommunications equipment, and computing devices where efficient power management is essential. Its features, such as low on-resistance and fast switching speed, make it ideal for DC-DC converters, battery-powered systems, and other applications requiring efficient energy use and heat management.
Package
The SI4866DY-T1-E3 is a MOSFET transistor typically packaged in a DPAK (TO-252) package type. This surface-mount package is designed for efficient thermal management and ease of use in various electronic applications.
