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SI7121DN-T1-GE3
+BOMMOSFET P-CH 30V 16A PPAK1212-8
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Nhà sản xuấtSản phẩm Vishay Siliconix
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Ông. Phần #SI7121DN-T1-GE3
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Bảng dữ liệu SI7121DN-T1-GE3 DataSheet
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 16A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 18mOhm @ 10A, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 65 nC @ 10 V |
| Vgs(Max) | ±25V |
| Input Capacitance(Ciss)(Max) @ Vds | 1960 pF @ 15 V |
| Power Dissipation (Max) | 3.7W (Ta), 52W (Tc) |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® 1212-8 |
Tổng quan
Description
Key features of the SI7121DN include a low on-resistance, which reduces power losses and increases energy efficiency. It supports high-speed switching, making it suitable for applications that require rapid signal changes. The transistor is used in various applications, such as power conversion, load switching, and motor control.
The SI7121DN-T1-GE3 is designed to operate with low gate drive, making it compatible with low voltage circuits. This MOSFET's characteristics make it ideal for both consumer electronics and industrial systems, where space and power efficiency are crucial. Overall, the SI7121DN-T1-GE3 is a versatile component used in a wide range of electronic applications due to its superior performance and reliability.
Equivalent
1. IRF530 from Infineon Technologies
2. FQP30N06L from ON Semiconductor
3. NXP PSMN2R0-30PL
These alternatives are based on similar voltage, current ratings, and package types. For exact equivalency, compare datasheets for specific electrical characteristics and thermal performance.
Features
1. Low On-Resistance: The device offers low on-resistance for efficient power switching, which minimizes power losses.
2. Compact Package: It is housed in a PowerPAK 1212-8 package, which combines a small footprint with efficient thermal performance.
3. Voltage and Current Ratings: Typically, such MOSFETs can handle a range of voltages and current levels suitable for various applications, though specific values should be checked in the datasheet.
4. Thermal Performance: The PowerPAK package provides excellent thermal handling capabilities, making it suitable for high-power applications.
5. Applications: It is commonly used in portable devices, DC-DC converters, and load switch applications where space and efficiency are critical.
For precise specifications such as maximum voltage, current, and on-resistance, consulting the datasheet is recommended.
Pinout
The primary function of the SI7121DN-T1-GE3 is to act as an electronic switch or amplifier in electronic circuits, particularly in applications that require efficient power management. It is designed to handle high power, with low on-resistance and fast switching capabilities, making it ideal for use in DC-DC converters, load switches, and power supply circuits.
Each pin on the MOSFET serves a specific purpose, with the standard pin configuration including the source, gate, and drain terminals that are typical of MOSFETs, along with additional pins for power dissipation and stability in the circuit. The precise pin assignments and their functions would be detailed in the specific datasheet for the SI7121DN-T1-GE3. Always refer to the manufacturer's documentation for accurate and detailed information regarding pin functions and electrical characteristics.