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SI7137DP-T1-GE3
+BOMMOSFET P-CH 20V 60A PPAK SO-8
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Nhà sản xuấtSản phẩm Vishay Siliconix
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Ông. Phần #SI7137DP-T1-GE3
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Bảng dữ liệu SI7137DP-T1-GE3 DataSheet
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain(Id) @ 25°C | 60A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 2.5V, 10V |
| Rds On(Max) @ Id Vgs | 1.95mOhm @ 25A, 10V |
| Vgs(th)(Max) @ Id | 1.4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 585 nC @ 10 V |
| Vgs(Max) | ±12V |
| Input Capacitance(Ciss)(Max) @ Vds | 20000 pF @ 10 V |
| Power Dissipation (Max) | 6.25W (Ta), 104W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
Tổng quan
Description
The SI7137DP-T1-GE3 is a specific model of power MOSFET manufactured by Vishay Siliconix. It is designed for use in power management applications. This MOSFET is part of the TrenchFET series, which is known for providing low on-resistance and high efficiency. The SI7137DP-T1-GE3 features an N-channel configuration and is typically used in applications requiring high-speed switching and low conduction losses.
Key features of the SI7137DP-T1-GE3 include its low on-resistance, which reduces power loss and improves efficiency, and a robust design that can handle significant power loads. It is commonly utilized in DC-DC converters, power supplies, and load switch applications. The device is housed in a PowerPAK SO-8 package, which allows for efficient heat dissipation.
Overall, the SI7137DP-T1-GE3 is a reliable choice for engineers looking for a high-performance MOSFET in power management circuits, offering a balance of efficiency, reliability, and thermal performance.
Key features of the SI7137DP-T1-GE3 include its low on-resistance, which reduces power loss and improves efficiency, and a robust design that can handle significant power loads. It is commonly utilized in DC-DC converters, power supplies, and load switch applications. The device is housed in a PowerPAK SO-8 package, which allows for efficient heat dissipation.
Overall, the SI7137DP-T1-GE3 is a reliable choice for engineers looking for a high-performance MOSFET in power management circuits, offering a balance of efficiency, reliability, and thermal performance.
Equivalent
The SI7137DP-T1-GE3 is a N-channel MOSFET. Equivalent products include:
1. Infineon BSC010N04LS
2. ON Semiconductor NTMFS4935N
3. Fairchild/ON Semiconductor FDBL0150N10L
4. Toshiba TPH1R306PL
5. STMicroelectronics STL120N4F7
These alternatives should be cross-verified for matching specifications like voltage, current ratings, and package type to ensure compatibility for your specific application.
1. Infineon BSC010N04LS
2. ON Semiconductor NTMFS4935N
3. Fairchild/ON Semiconductor FDBL0150N10L
4. Toshiba TPH1R306PL
5. STMicroelectronics STL120N4F7
These alternatives should be cross-verified for matching specifications like voltage, current ratings, and package type to ensure compatibility for your specific application.
Features
The SI7137DP-T1-GE3 is a N-channel MOSFET produced by Vishay Siliconix. Key features include:
1. N-Channel Configuration: Designed for efficient high-speed switching.
2. Low On-Resistance: Features a low on-state resistance, enhancing performance in power applications.
3. Fast Switching: Optimized for quick turn-on and turn-off times, suitable for high-frequency circuits.
4. Packaging: Available in a PowerPAK SO-8 package, which provides better thermal performance and space efficiency.
5. Maximum Voltage and Current: Typically handles a high drain-source voltage and current, suitable for various power applications.
6. Thermal Performance: Enhanced thermal conductivity for better heat dissipation.
7. Applications: Commonly used in power management, DC-DC converters, and load switches.
These attributes make the SI7137DP-T1-GE3 a versatile component for various electronic applications requiring efficient power management and switching capabilities.
1. N-Channel Configuration: Designed for efficient high-speed switching.
2. Low On-Resistance: Features a low on-state resistance, enhancing performance in power applications.
3. Fast Switching: Optimized for quick turn-on and turn-off times, suitable for high-frequency circuits.
4. Packaging: Available in a PowerPAK SO-8 package, which provides better thermal performance and space efficiency.
5. Maximum Voltage and Current: Typically handles a high drain-source voltage and current, suitable for various power applications.
6. Thermal Performance: Enhanced thermal conductivity for better heat dissipation.
7. Applications: Commonly used in power management, DC-DC converters, and load switches.
These attributes make the SI7137DP-T1-GE3 a versatile component for various electronic applications requiring efficient power management and switching capabilities.
Pinout
The SI7137DP-T1-GE3 is a power MOSFET manufactured by Vishay Siliconix. It is designed for high-efficiency power conversion applications.
This MOSFET typically comes in an SO-8 package, which is a standard surface-mount package with 8 pins. The primary function of this MOSFET is to serve as a switch for controlling power in circuits, particularly in applications requiring efficient voltage regulation and load switching.
Key specifications include low on-resistance and high current handling capability, making it suitable for applications like DC-DC converters, load switches, and synchronous rectification in power supplies.
For detailed pin configuration and electrical characteristics, referring to the datasheet is recommended to ensure proper integration into your design.
This MOSFET typically comes in an SO-8 package, which is a standard surface-mount package with 8 pins. The primary function of this MOSFET is to serve as a switch for controlling power in circuits, particularly in applications requiring efficient voltage regulation and load switching.
Key specifications include low on-resistance and high current handling capability, making it suitable for applications like DC-DC converters, load switches, and synchronous rectification in power supplies.
For detailed pin configuration and electrical characteristics, referring to the datasheet is recommended to ensure proper integration into your design.
Manufacturer
The SI7137DP-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global company that specializes in the production of discrete semiconductors and passive electronic components. Their products are used in a wide range of industries, including automotive, industrial, computing, consumer, telecommunications, military, aerospace, and medical. Vishay's portfolio includes products such as diodes, transistors, integrated circuits, capacitors, resistors, and inductors. The SI7137DP-T1-GE3, in particular, is a MOSFET, which is a type of transistor used for switching and amplifying electronic signals in various applications.
Application
The SI7137DP-T1-GE3 is a MOSFET used in various applications due to its efficiency and reliability. Its primary application areas include power management systems, DC-DC converters, load switching, and motor control. It is also used in consumer electronics, computing, telecommunications, and automotive systems. The device is designed to handle high current and voltage levels, making it suitable for applications requiring high power efficiency and thermal performance. Additionally, it is often utilized in battery-powered devices due to its low on-resistance and fast switching capabilities, which help in optimizing power usage and extending battery life.
Package
The SI7137DP-T1-GE3 is a PowerPAK® SO-8 package type. This package is known for its compact design and efficient thermal performance, making it suitable for high-power and space-constrained applications.
