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SI7149DP-T1-GE3
+BOMMOSFET P-CH 30V 50A PPAK SO-8
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Nhà sản xuấtSản phẩm Vishay Siliconix
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Ông. Phần #SI7149DP-T1-GE3
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Bảng dữ liệu SI7149DP-T1-GE3 DataSheet
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Gói PowerPAK-SO-8
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Có sẵn1595
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 50A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 5.2mOhm @ 15A, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 147 nC @ 10 V |
| Vgs(Max) | ±25V |
| Input Capacitance(Ciss)(Max) @ Vds | 4590 pF @ 15 V |
| Power Dissipation (Max) | 69W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
Tổng quan
Description
Key Features:
- Voltage Rating: 30V
- Current Rating: 60A (continuous)
- Low On-Resistance (RDS(on)): 1.8mΩ (max at 10V VGS)
- Fast Switching: Optimized for high-frequency operation
- Package: PowerPAK® SO-8 (compact, thermally efficient)
Applications:
- Synchronous rectification
- Power supplies (buck/boost converters)
- Battery management
Advantages:
- High current handling with minimal conduction losses
- Compact footprint for space-constrained designs
This MOSFET is ideal for high-performance, energy-efficient systems requiring robust power handling in a small form factor.
Features
- Voltage Rating: -30V (Drain-to-Source, VDS)
- Current Rating: -50A (Continuous Drain Current, ID)
- Low On-Resistance: 7.5mΩ (max) at VGS = -10V
- Gate Threshold Voltage: -1V to -3V (VGS(th))
- Fast Switching: Optimized for high-efficiency power applications
- Package: PowerPAK® SO-8 (Compact, surface-mount design)
- AEC-Q101 Qualified: Suitable for automotive applications
- Low Gate Charge (QG): Enhances switching performance
Ideal for load switching, power management, and DC-DC conversion in automotive, industrial, and consumer electronics.
Pinout
Key Functions:
- Dual N-channel MOSFET (two independent MOSFETs in one package).
- Low on-resistance (RDS(on)) for efficient power switching.
- High current handling (typically 20A per channel).
- Logic-level gate drive (compatible with 3.3V/5V controllers).
- Common drain configuration (pins 1-3 and 6-8 are drains, pins 4-5 are gates, pin 5 is also a source).
Applications:
- DC-DC converters, motor control, load switching.
Pinout (simplified):
- Pins 1-3, 6-8: Drain (D) for each MOSFET.
- Pins 4,5: Gate (G) and Source (S) connections.
Compact and efficient for power management in space-constrained designs.
