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SI7454DP-T1-E3
+BOMMOSFET N-CH 100V 5A PPAK SO-8
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Nhà sản xuấtSản phẩm Vishay Siliconix
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Ông. Phần #SI7454DP-T1-E3
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Series | TrenchFET® |
| PartStatus | Obsolete |
| BaseProductNumber | SI7454 |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 5A (Ta) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 6V, 10V |
| RdsOn(Max)@Id,Vgs | 34mOhm @ 7.8A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 30 nC @ 10 V |
| Vgs(Max) | ±20V |
| PowerDissipation(Max) | 1.9W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PowerPAK® SO-8 |
| Package | PowerPAK® SO-8 |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
Tổng quan
Description
The SI7454DP-T1-E3 is typically available in a PowerPAK SO-8 package, which provides a compact size with excellent thermal performance, allowing for better heat dissipation in demanding applications. It is often used in environments where space and power efficiency are critical. The device is RoHS compliant, ensuring it meets environmental and safety standards.
In summary, the SI7454DP-T1-E3 is valued for its high performance in compact power electronic designs, providing efficient power conversion and management in various applications.
Equivalent
1. IRF530 - from International Rectifier
2. FQP30N06L - from Fairchild Semiconductor (now ON Semiconductor)
3. STP55NF06 - from STMicroelectronics
When seeking equivalents, ensure the replacements have similar specifications, such as voltage, current ratings, and package type. Always verify detailed datasheets to ensure full compatibility with your application.
Features
1. N-Channel MOSFET: It is designed for switching applications.
2. Package: Comes in a PowerPAK SO-8 package, providing a compact surface-mount solution.
3. Voltage and Current Ratings: Typically features a high voltage rating, such as 40V, and can handle a significant amount of continuous drain current, often around 30A or higher depending on specific conditions.
4. Low On-Resistance: Offers low R_DS(on), which ensures efficient performance by minimizing energy losses during conduction.
5. Thermal Performance: The PowerPAK package provides enhanced thermal performance, crucial for high-power applications.
6. Applications: Suitable for use in DC-DC converters, power management, and various other high-speed switching applications.
These features make the SI7454DP-T1-E3 a reliable choice for engineers looking to design efficient power systems with minimal form factor constraints.
Pinout
Here is a brief overview of the pin functions:
1. Drain (D) - There are three pins (5, 6, 7, and 8) connected to the drain terminal.
2. Gate (G) - Pin 4 is connected to the gate terminal.
3. Source (S) - Pins 1, 2, and 3 are connected to the source terminal.
This MOSFET is typically used for applications requiring high-efficiency power conversion, such as in DC-DC converters and other high-speed switching applications. It operates with low on-resistance, which helps in reducing power loss and increasing efficiency.