SI7997DP-T1-GE3

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SI7997DP-T1-GE3

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MOSFET 2P-CH 30V 60A PPAK SO-8

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Thông số kỹ thuật

thuộc tính Giá trị
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
Part Status Active
FET Type 2 P-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain(Id) @ 25°C 60A
Rds On(Max) @ Id Vgs 5.5mOhm @ 20A, 10V
Vgs(th)(Max) @ Id 2.2V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 160nC @ 10V
Input Capacitance(Ciss)(Max) @ Vds 6200pF @ 15V
Power - Max 46W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount

Tổng quan

Description

The SI7997DP-T1-GE3 is a dual P-channel MOSFET from Vishay Siliconix, designed for high-efficiency power management in applications like load switching, battery protection, and DC-DC conversion.
### Key Features:
- Voltage Rating: -30V (drain-to-source)
- Current Rating: -7.5A (continuous drain current)
- Low On-Resistance (RDS(on)): 36mΩ (max) at VGS = -10V
- Logic-Level Gate Drive: Optimized for -4.5V to -20V gate voltage
- Compact Package: PowerPAK® SO-8 (improved thermal performance)
- AEC-Q101 Qualified: Suitable for automotive applications
### Applications:
- Power distribution in automotive systems
- Load switches in portable devices
- Battery management in power tools
This MOSFET offers low power loss, high reliability, and space-saving design, making it ideal for modern power electronics.

Equivalent

Equivalent products to the SI7997DP-T1-GE3 (Vishay dual P-channel MOSFET) include:
- SI7998DP-T1-GE3 (similar specs, lower Rds(on))
- SI7147DP-T1-GE3 (comparable dual P-channel MOSFET)
- FDS6990A (Fairchild alternative)
- DMG1012UW (Diodes Inc. equivalent)
Check datasheets for exact parameter matching.

Features

The SI7997DP-T1-GE3 is a 30V P-channel MOSFET with the following key features:
- Voltage Rating: 30V
- Current Rating: 12A (continuous)
- Low On-Resistance (RDS(on)): 9.5mΩ @ VGS = -10V
- Fast Switching: Optimized for high-efficiency power applications
- Package: PowerPAK® SO-8 (Compact, surface-mount design)
- Logic-Level Gate Drive: Compatible with 4.5V drive
- Low Gate Charge (Qg): Enhances switching performance
- AEC-Q101 Qualified: Suitable for automotive applications
- Lead-Free & RoHS Compliant
Ideal for DC-DC converters, load switches, and power management in automotive, industrial, and consumer electronics.

Application

The SI7997DP-T1-GE3 is a 30V N-channel MOSFET optimized for high-efficiency power management in compact applications. Key areas include:
- DC-DC Converters: Used in voltage regulation for servers, telecom, and industrial systems.
- Load Switching: Efficient power distribution in portable devices (laptops, smartphones).
- Motor Control: Drives small motors in automotive and robotics.
- Battery Management: Protects and manages power in battery-operated devices.
- LED Lighting: Supports driver circuits for energy-efficient lighting.
Its low on-resistance (RDS(on)) and small footprint make it ideal for space-constrained, high-performance designs.

Package

The SI7997DP-T1-GE3 is a PowerPAK® SO-8 package, a compact surface-mount design optimized for high-power applications. It features low on-resistance and efficient thermal performance, commonly used in power management circuits. The package dimensions are industry-standard SO-8, ensuring compatibility with automated assembly processes.

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