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SIS890DN-T1-GE3
+BOMMOSFET N-CH 100V 30A PPAK1212-8
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Nhà sản xuấtSản phẩm Vishay Siliconix
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Ông. Phần #SIS890DN-T1-GE3
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Thông số kỹ thuật
| thuộc tính | Giá trị |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 30A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 23.5mOhm @ 10A, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 29 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 802 pF @ 50 V |
| Power Dissipation (Max) | 3.7W (Ta), 52W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® 1212-8 |
Tổng quan
Description
If you provide the manufacturer, I’ll summarize:
- what the device is (MCU/SoC, sensor/interface IC, etc.)
- key features (core, memory, interfaces)
- supply/temperature range and packaging
- typical applications
Without the exact datasheet, I can only offer a generic outline.
Manufacturer
Application
- Embedded systems and microcontroller-based designs
- Industrial automation, motor control and power management
- Networking, communications and data-processing equipment
- Consumer electronics and multimedia devices
- Automotive electronics, infotainment and telematics
Note: for exact recommended uses, electrical specs, and environmental limits, consult the official datasheet from the manufacturer.